US5506006A
Expired / Lapsed
US
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Process for depositing silicon dioxide by liquid phase diposition
Assignee: National Science and Technology Council
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Filing: 1995-06-01
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Granted: 1996-04-09
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Expires: 2015-06-01
Abstract
Abstract A process for depositing a silicon dioxide (SiO 2 ) film on a substrate by liquid phase deposition is developed. Silicic acid is used instead of SiO 2 powder to saturate hydrofluorosilicic acid so as to shorten the period required for preparing the solution to 3 hours. Water is used to supersaturate the solution. The corresponding deposition rate of SiO 2 is about 50 nm per hour.
Inventors
- 👤 Jeng-Shiuh Chou
- 👤 Si-Chen Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 00:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6342
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
102 words
A process for depositing a silicon dioxide film on a substrate, comprising the steps of: (a) saturating a hydrofluorosilicic acid solution by adding hydrated silica to hydrofluorosilicic acid; (b) diluting the saturated hydrofluorosilicic acid solution with water to obtain a hydrofluorosilicic acid solution supersaturated with silicon dioxide to an extent necessary to deposit the silicon dioxide film on a surface of the substrate; and (c) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate and said dilution step in (b) above being employed after the step in (a) above.
Claim 2
Dependent Claim
102 words
A process for depositing a silicon dioxide film on a substrate, comprising the steps of: (a) saturating a hydrofluorosilicic acid solution by adding hydrated silica to hydrofluorosilicic acid; (b) diluting the saturated hydrofluorosilicic acid solution with water to obtain a hydrofluorosilicic acid solution supersaturated with silicon dioxide to an extent necessary to deposit the silicon dioxide film on a surface of the substrate; and (c) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate and said dilution step in (b) above being employed after the step in (a) above.
Claim 3
Dependent Claim
46 words
The process as claimed in claim 1, further comprising the step of adding a saturating agent to the solution obtained from step (b) of claim 1, whereby said saturating agent is capable of reacting with fluoric acid and makes the solution more supersaturated with silicon dioxide.
Claim 4
Dependent Claim
34 words
The process as claimed in claim 2, wherein the saturating agent capable of reacting with fluoric acid is selected from the group consisting of boric acid, aluminum, water containing ammonia therein and sodium hydroxide.
Claim 5
Dependent Claim
14 words
The process as claimed in claim 3, wherein the saturating agent is boric acid.
Claim 6
Dependent Claim
80 words
A process for preparing a hydrofluorosilicic acid solution supersaturated with silicon dioxide, said solution being capable of being used to deposit a silicon dioxide film on a substrate, comprising the steps of: (a) saturating a hydrofluorosilicic acid solution by adding hydrated silica to hydrofluorosllicic acid; and (b) diluting the saturated hydrofluorosilicic acid solution with water to obtain a hydrofluorosilicic acid solution supersaturated with silicon dioxide, and said dilution step in (b) above being employed after the step in (a) above.
Claim 7
Dependent Claim
80 words
A process for preparing a hydrofluorosilicic acid solution supersaturated with silicon dioxide, said solution being capable of being used to deposit a silicon dioxide film on a substrate, comprising the steps of: (a) saturating a hydrofluorosilicic acid solution by adding hydrated silica to hydrofluorosllicic acid; and (b) diluting the saturated hydrofluorosilicic acid solution with water to obtain a hydrofluorosilicic acid solution supersaturated with silicon dioxide, and said dilution step in (b) above being employed after the step in (a) above.
Claim 8
Dependent Claim
47 words
The process as claimed in claim 5, further comprising the step of adding adding a saturating agent to the solution obtained from step (b) of claim 5, whereby said saturating agent is capable of reacting with fluoric acid and makes the solution more supersaturated with silicon dioxide.
Claim 9
Dependent Claim
34 words
The process as claimed in claim 6, wherein the saturating agent capable of reacting with fluoric acid is selected from the group consisting of boric acid, aluminum, water containing ammonia therein and sodium hydroxide.
Claim 10
Dependent Claim
167 words
A process for preparing a hydrofluorosilicic acid solution supersaturated with silicon dioxide, said solution being capable of being used to deposit a silicon dioxide film on a substrate and for depositing said silicon dioxide film on a substrate, comprising the steps of: (a) saturating a hydrofluorosilicic acid solution by adding hydrated silica to hydrofluorosilicic acid; (b) diluting the saturated hydrofluorosilicic acid solution with water to obtain a hydrofluorosilicic acid solution supersaturated with silicon dioxide; (c) adding a saturating agent selected from the group consisting of boric acid, aluminum, water containing ammonia therein, and sodium hydroxide to the solution obtained from step (b); and, (d) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate, said contacting step in (d) above being employed after the step (c) above, said addition step in (c) above being employed after the step (b) above, and said dilution step in (b) above being employed after the step in (a) above.
Claim 11
Dependent Claim
167 words
A process for preparing a hydrofluorosilicic acid solution supersaturated with silicon dioxide, said solution being capable of being used to deposit a silicon dioxide film on a substrate and for depositing said silicon dioxide film on a substrate, comprising the steps of: (a) saturating a hydrofluorosilicic acid solution by adding hydrated silica to hydrofluorosilicic acid; (b) diluting the saturated hydrofluorosilicic acid solution with water to obtain a hydrofluorosilicic acid solution supersaturated with silicon dioxide; (c) adding a saturating agent selected from the group consisting of boric acid, aluminum, water containing ammonia therein, and sodium hydroxide to the solution obtained from step (b); and, (d) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate, said contacting step in (d) above being employed after the step (c) above, said addition step in (c) above being employed after the step (b) above, and said dilution step in (b) above being employed after the step in (a) above.
References Cited (Backward Citations)
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