US5073408A
Expired / Lapsed
US
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Method of depositing a silicon dioxide film
Assignee: Nippon Sheet Glass Co Ltd
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Filing: 1990-09-07
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Granted: 1991-12-17
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Expires: 2010-09-07
Abstract
Abstract A method of depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by increasing the temperature of a hydrosilicofluoric acid solution substantially saturated with silicon dioxide.
Inventors
- 👤 Takuji Goda
- 👤 Hirotsugu Nagayama
- 👤 Hideo Kawahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:49
CPC Classifications
C; C23; C23C; C23C2/00; C23C2/04; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C03C17/25; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2218/00; C03C2218/10; C03C2218/11; C03C2218/111
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
109 words
A method for depositing a silicon dioxide film on a substrate comprising the steps of: (a) preparing a hydrosilicofluoric acid solution substantially saturated with silicon dioxide at a first temperature of not more than 15° C., (b) increasing temperature of the solution prepared in step (a) to a second temperature at least 10° C. higher than the first temperature and obtaining a hydrosilicofluoric acid solution supersaturated with silicon dioxide to an extent necessary for depositing the silicon dioxide film on a surface of the substrate, and (c) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate.
Claim 2
Independent Claim
109 words
A method for depositing a silicon dioxide film on a substrate comprising the steps of: (a) preparing a hydrosilicofluoric acid solution substantially saturated with silicon dioxide at a first temperature of not more than 15° C., (b) increasing temperature of the solution prepared in step (a) to a second temperature at least 10° C. higher than the first temperature and obtaining a hydrosilicofluoric acid solution supersaturated with silicon dioxide to an extent necessary for depositing the silicon dioxide film on a surface of the substrate, and (c) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate.
Claim 3
Dependent Claim
24 words
The method as set forth in claim 1, wherein the hydrosilicofluoric acid solution of step (b) is obtained without addition of external agents thereto.
Claim 4
Dependent Claim
34 words
The method set forth in claim 1, wherein the hydrosilicofluoric acid solution of step (b) is obtained without addition of a member selected from the group consisting of water, boric acid and sodium silicate.
Claim 5
Dependent Claim
20 words
The method set forth in claim 1, wherein the first temperature of step (a) is not more than 10° C.
Claim 6
Dependent Claim
20 words
The method set forth in claim 1, wherein the first temperature of step (a) is not more than 5° C.
Claim 7
Dependent Claim
26 words
The method as set forth in claim 1, wherein the contacting of step (c) is carried out at a temperature of not more than 70° C.
Claim 8
Dependent Claim
39 words
The method set forth in claim 2, wherein the first temperature of step (a) is about 15° C., the second temperature of step (b) is about 40° C. and the contacting of step (c) is at about 40° C.
Claim 9
Dependent Claim
39 words
The method set forth in claim 2, wherein the first temperature of step (a) is about 10° C., the second temperature of step (b) is about 40° C. and the contacting of step (c) is at about 40° C.
Claim 10
Dependent Claim
39 words
The method set forth in claim 2, wherein the first temperature of step (a) is about 5° C., the second temperature of step (b) is about 40° C. and the contacting of step (c) is at about 40° C.
Claim 11
Independent Claim
150 words
A method for depositing of silicon dioxide film on a substrate comprising the steps of: (a) preparing a hydrosilicofluoric acid solution substantially saturated with silicon dioxide, (b) increasing temperature of the solution prepared in step (a) to a second temperature, where the first and second temperatures are selected so that a resulting hydrosilicofluoric acid solution at the second temperature is supersaturated with silicon dioxide to an extent necessary for depositing silicon dioxide on a surface of the substrate, (c) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate, (d) cooling the solution resulting from step (c) and obtaining a hydrosilicofluoric acid solution unsaturated with silicon dioxide, (e) preparing the solution of step (a) by dissolving silicon dioxide from a source outside of the method into the solution resulting from step (d), and repeating steps (b) to (e).
Claim 12
Independent Claim
150 words
A method for depositing of silicon dioxide film on a substrate comprising the steps of: (a) preparing a hydrosilicofluoric acid solution substantially saturated with silicon dioxide, (b) increasing temperature of the solution prepared in step (a) to a second temperature, where the first and second temperatures are selected so that a resulting hydrosilicofluoric acid solution at the second temperature is supersaturated with silicon dioxide to an extent necessary for depositing silicon dioxide on a surface of the substrate, (c) contacting the substrate with the solution resulting from step (b) and depositing the silicon dioxide film on the surface of the substrate, (d) cooling the solution resulting from step (c) and obtaining a hydrosilicofluoric acid solution unsaturated with silicon dioxide, (e) preparing the solution of step (a) by dissolving silicon dioxide from a source outside of the method into the solution resulting from step (d), and repeating steps (b) to (e).
Claim 13
Dependent Claim
17 words
The method set forth in claim 10, wherein the first temperature is not more than 15° C.
Claim 14
Dependent Claim
23 words
The method set forth in claim 11, wherein the difference between the first temperature and the second temperature is at least 10° C.
Claim 15
Dependent Claim
23 words
The method set forth in claim 12, wherein the hydrosilicofluoric acid solution of step (b) is obtained without addition of external agents thereto.
Claim 16
Dependent Claim
34 words
The method set forth in claim 10, wherein the hydrosilicofluoric acid solution of step (b) is obtained without addition of a member selected from the group consisting of water, boric acid and sodium silicate.
Claim 17
Dependent Claim
39 words
The method set forth in claim 10, wherein the first temperature of step (a) is about 15° C., the second temperature of step (b) is about 40° C. and the contacting of step (c) is at about 40° C.
Claim 18
Dependent Claim
39 words
The method set forth in claim 10, wherein the first temperature of step (a) is about 10° C., the second temperature of step (b) is about 40° C. and the contacting of step (c) is at about 40° C.
Claim 19
Dependent Claim
39 words
The method set forth in claim 10, wherein the first temperature of step (a) is about 5° C., the second temperature of step (b) is about 40° C. and the contacting of step (c) is at about 40° C.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-12-16 | 1995-06-17 | 1995-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-16 | 1999-06-17 | 1999-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-16 | 2003-06-17 | 2003-12-17 | $7700.00 | Window Closed / Lapsed |