Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
189 words
An organic film removing method for removing an organic film formed in a pattern on the surface of a semiconductor wafer that is supported by a wafer support in a processing chamber, comprising the steps of: conveying the semiconductor wafer from outside the processing chamber into the processing chamber; placing the semiconductor wafer on the wafer support; continuously supplying a mixed gas including an alcohol and one of ozone gas and an ozone-containing gas into the processing chamber at least in a period between a point of time immediately before the semiconductor wafer is placed on the wafer support and a point of time when removal of the organic film is determined to be completed, so that the mixed gas will act on the organic film formed on the surface of the semiconductor wafer supported by the wafer support; and heating the organic film formed on the surface of the semiconductor wafer on the wafer support within the processing chamber at a temperature in a range below that at which substantial defects will be formed in the elements of a semiconductor device to be formed on the semiconductor wafer.
Claim 2
Dependent Claim
189 words
An organic film removing method for removing an organic film formed in a pattern on the surface of a semiconductor wafer that is supported by a wafer support in a processing chamber, comprising the steps of: conveying the semiconductor wafer from outside the processing chamber into the processing chamber; placing the semiconductor wafer on the wafer support; continuously supplying a mixed gas including an alcohol and one of ozone gas and an ozone-containing gas into the processing chamber at least in a period between a point of time immediately before the semiconductor wafer is placed on the wafer support and a point of time when removal of the organic film is determined to be completed, so that the mixed gas will act on the organic film formed on the surface of the semiconductor wafer supported by the wafer support; and heating the organic film formed on the surface of the semiconductor wafer on the wafer support within the processing chamber at a temperature in a range below that at which substantial defects will be formed in the elements of a semiconductor device to be formed on the semiconductor wafer.
Claim 3
Dependent Claim
27 words
An organic film removing method according to claim 1, wherein the alcohol contained in the mixed gas has a boiling point below the boiling point of water.
Claim 4
Dependent Claim
31 words
An organic film removing method according to claim 1, wherein the alcohol contained in the mixed gas is at least one selected from the group consisting of methanol, ethanol, and propanol.
Claim 5
Dependent Claim
22 words
An organic film removing method according to claim 1, wherein the organic film removing method processes a single wafer at a time.
Claim 6
Dependent Claim
45 words
An organic film removing method according to claim 1, wherein the quantity of the alcohol at room temperature added to one liter of the ozone gas or ozone-containing gas at room temperature and atmospheric pressure is in the range of 0.2 g to 4 g.
Claim 7
Dependent Claim
44 words
An organic film removing method according to claim 1, wherein the organic film formed on the surface of the semiconductor wafer is irradiated with ultraviolet radiation while the mixed gas is blown against the organic film formed on the surface of the semiconductor wafer.
Claim 8
Dependent Claim
47 words
An organic film removing method according to claim 1, wherein the alcohol in the mixed gas is a vapor c onverted from a liquid by heating, and the alcohol vapor and said one of ozone gas and an ozone-containing gas are mixed to produce the mixed gas.
Claim 9
Dependent Claim
60 words
An organic film removing method according to claim 1, further comprising the steps, before said continuously supplying step, of: supplying an inert gas as a carrier gas for carrying the alcohol; mixing the inert gas with the alcohol; and mixing the inert gas and alcohol with said one of ozone gas and an ozone-containing gas to produce said mixed gas.
Claim 10
Dependent Claim
44 words
An organic film removing method according to claim 1, wherein the wafer support is a wafer stage, and the wafer stage is heated so that the temperature of the surface of the wafer stage is in the range of 150° C. to 250° C.
Claim 11
Dependent Claim
32 words
An organic film removing method according to claim 7, wherein the alcohol vapor is mixed with an inert gas as a carrier gas for carrying the alcohol vapor in said mixed gas.