Optical transistor

Claim 2

An optical transistor comprising: a sample of semiconductor material for receiving an incident light beam having a frequency in an infrared wave band, said semiconductor material having a concentration of carriers sufficient to output said incident light beam as an output beam; a light source for producing a bias beam to irradiate a spot on the sample and thereby excite said carriers to move and maintain a plasma oscillation reflection edge of the sample at a desired frequency position, wherein said bias beam comprises incoherent light with a continuous spectrum; and another light source for producing a laser beam as a working beam which irradiates the sample within the spot produced by the bias beam, the plasma oscillation reflection edge of the sample having a frequency characteristic such that an intensity variation of the bias beam produces an intensity modulation of said output beam.

Claim 3

An optical transistor according to claim 1, wherein a photon frequency of the incident working beam is equal to a frequency at which a change in reflectivity of the sample with respect to a plasma frequency reaches a maximum value on the plasma reflection edge, and the power of the bias beam is varied to modulate the power of the output beam, thereby forming a light power modulator.

Claim 4

An optical transistor according to claim 1, wherein a frequency at a valley of a reflection spectrum of the plasma oscillation of the sample is equal to a photon frequency of the incident working beam; and the intensity of the bias beam is increased so that the intensity of said output beam increases from an attenuated value determined by the reflection valley to an increased value approaching that of the working beam to provide a reflective light switch.

Claim 5

An optical transistor according to claim 1, wherein a frequency at a valley of the reflection spectrum of the plasma oscillation of the sample is equal to a photon frequency of the incident working beam; and the intensity of the bias beam is increased so that the intensity of a beam reflected by said sample increases from an attenuated value determined by the reflection valley to an increased value approaching that of the working beam, and the output beam is transmitted through said semiconductor material to provide a transmissive light switch.

Claim 6

An optical transistor according to claim 1 wherein a wavelength of the bias beam is within a wave band ranging from visible light to infrared light, and the bias beam further comprises a beam of light with an intensity switched between a lower intensity which moves and maintains the plasma oscillation reflection edge of the sample at a desired frequency, and a higher intensity which modulates the output beam.

Claim 7

An optical transistor according to claim 1 wherein a wavelength of the bias beam is within a wave band ranging from visible light to infrared light, and the bias beam further comprises a beam of light with an intensity switching between a lower intensity which moves and maintains the plasma oscillation reflection edge of the sample at a desired frequency, and a higher intensity which switches the output beam.

Claim 8

An optical transistor according to claim 1 wherein a wavelength of the bias beam is within a wave band ranging from visible light to infrared light, and the bias beam further comprises: a background beam to move and maintain the plasma oscillation reflection edge of the sample at a desired frequency; and an auxiliary beam to modulate the output beam.

Claim 9

An optical transistor according to claim 7, wherein a photon frequency of the background beam is different from a photon frequency of the auxiliary beam.

Claim 10

An optical transistor according to claim 1 wherein a wavelength of the bias beam is within a wave band ranging from visible light to infrared light, and the bias beam further comprises: a background beam used to move and maintain the plasma oscillation reflection edge of the sample at a desired frequency; and an auxiliary beam to switch the output beam on and off.

Claim 11

An optical transistor according to claim 9, wherein a photon frequency of the background beam is different from a photon frequency of the auxiliary beam.

Claim 12

An optical transistor according to claim 1, wherein a detector receives the output beam, and the bias beam comprises a background beam which moves the plasma oscillation reflection edge of the sample, so that a combined detector is formed to measure variations in an input auxiliary beam.

Claim 13

An optical transistor according to claim 1, wherein the working beam comprises a range of frequencies, the intensity of the bias beam changes as a linear sawtooth wave and an auxiliary beam modulates the output beam so that a modulated frequency of the output beam is proportional to the intensity of the working beam within the frequency range of the reflection edge thereby forming a spectral scanner which produces a frequency spectrum of light intensity of the working beam.

Claim 14

An optical transistor according to claim 1, wherein the sample has a thickness larger than a plasma absorption length, said sample being attached to a semiconductor substrate having a relatively broad forbidden band, and the bias beam and working beam are transmitted through a junction between the sample and the substrate.

Claim 15

An optical transistor according to claim 13, wherein one lateral surface on the substrate is ground to a slope such that the angle between the slope and a bonding plane between the substrate and the sample is greater than a total reflection angle of the bias beam but smaller than a total reflection angle on the boundary of the substrate and the sample, and the bias beam is incident to the substrate perpendicular to the slope surface.

Claim 16

An optical transistor according to claim 13, wherein one lateral surface on the substrate is ground to a slope such that the angle between the slope and a bonding plane between the substrate and the sample is greater than a total reflection angle of the bias beam but smaller than a total reflection angle on the boundary of the substrate and the sample, and the bias beam is incident perpendicular to a surface of the substrate opposite to the slope surface.

Claim 17

An optical transistor according to claim 13, wherein two opposite lateral surfaces on the substrate are ground to a slope such that an angle between the slope and a bonding plane between the substrate and the sample is greater than a total reflection angle of the bias beam but smaller than a total reflection angle on the boundary of the substrate and the sample, and the bias beam is incident to the substrate perpendicular to a surface of the slope.

Claim 18

An optical transistor according to claim 16, wherein a semiconductor laser is grown on a plane of opposite sides of the substrate to supply the bias beam.

Claim 19

An optical transistor according to claim 13, wherein two opposite lateral surfaces of the substrate are ground to a wedge having two perpendicular planes, and wherein the bias beam comprises a background beam to maintain the plasma oscillation reflection edge of the sample at a desired frequency, and an auxiliary beam to modulate the output beam, the background beam and the auxiliary beam being incident normal to the planes of the wedges.

Claim 20

An optical transistor comprising: a sample of semiconductor material for receiving an incident light beam having a frequency in an infrared wave band, said semiconductor material having a concentration of carriers sufficient to output said incident light beam as an output beam; a light source for producing a bias beam to irradiate a spot on the sample and thereby excite said carriers to move and maintain a plasma oscillation reflection edge of the sample at a desired frequency position; and another light source for producing a laser beam as a working beam which irradiates the sample within the spot produced by the bias beam, the plasma oscillation reflection edge of the sample having a frequency characteristic such that an intensity variation of the bias beam produces an intensity modulation of said output beam, wherein the sample has a thickness larger than a plasma absorption length, said sample being attached to a semiconductor substrate having a relatively broad forbidden band, and the bias beam and working beam are transmitted through a junction between the sample and the substrate, one lateral surface on the substrate being ground to a slope such that the angle between the slope and a bonding plane between the substrate and the sample is greater than a total reflection angle of the bias beam but smaller than a total reflection angle on the boundary of the substrate and the sample, and the bias beam is incident to the substrate perpendicular to the slope surface.

Claim 21

An optical transistor comprising: a sample of semiconductor material for receiving an incident light beam having a frequency in an infrared wave band, said semiconductor material having a concentration of carriers sufficient to output said incident light beam as an output beam; a light source for producing a bias beam to irradiate a spot on the sample and thereby excite said carriers to move and maintain a plasma oscillation reflection edge of the sample at a desired frequency position; and another light source for producing a laser beam as a working beam which irradiates the sample within the spot produced by the bias beam, the plasma oscillation reflection edge of the sample having a frequency characteristic such that an intensity variation of the bias beam produces an intensity modulation of said output beam, wherein the sample has a thickness larger than a plasma absorption length, said sample being attached to a semiconductor substrate having a relatively broad forbidden band, and the bias beam and working beam are transmitted through a junction between the sample and the substrate, one lateral surface on the substrate being ground to a slope such that the angle between the slope and a bonding plane between the substrate and the sample is greater than a total reflection angle of the bias beam but smaller than a total reflection angle on the boundary of the substrate and the sample, and the bias beam is incident to the substrate perpendicular to the slope surface.

Claim 22

An optical transistor according to claim 19, wherein said bias beam comprises coherent light.

Claim 23

An optical transistor comprising: a sample of semiconductor material for receiving an incident light beam having a frequency in an infrared wave band, said semiconductor material having a concentration of carriers sufficient to output said incident light beam as an output beam; a light source for producing a bias beam to irradiate a spot on the sample and thereby excite said carriers to move and maintain a plasma oscillation reflection edge of the sample at a desired frequency position; and another light source for producing a laser beam as a working beam which irradiates the sample within the spot produced by the bias beam, the plasma oscillation reflection edge of the sample having a frequency characteristic such that an intensity variation of the bias beam produces an intensity modulation of said output beam, wherein the sample has a thickness larger than a plasma absorption length, said sample being attached to a semiconductor substrate having a relatively broad forbidden band, and the bias beam and working beam are transmitted through a junction between the sample and the substrate, two opposite lateral surfaces of the substrate being ground to a wedge having two perpendicular planes, and wherein the bias beam comprises a background beam to maintain the plasma oscillation reflection edge of the sample at a desired frequency, and an auxiliary beam to modulate the output beam, the background beam and the auxiliary beam being incident normal to the planes of the wedges.

Claim 24

An optical transistor comprising: a sample of semiconductor material for receiving an incident light beam having a frequency in an infrared wave band, said semiconductor material having a concentration of carriers sufficient to output said incident light beam as an output beam; a light source for producing a bias beam to irradiate a spot on the sample and thereby excite said carriers to move and maintain a plasma oscillation reflection edge of the sample at a desired frequency position; and another light source for producing a laser beam as a working beam which irradiates the sample within the spot produced by the bias beam, the plasma oscillation reflection edge of the sample having a frequency characteristic such that an intensity variation of the bias beam produces an intensity modulation of said output beam, wherein the sample has a thickness larger than a plasma absorption length, said sample being attached to a semiconductor substrate having a relatively broad forbidden band, and the bias beam and working beam are transmitted through a junction between the sample and the substrate, two opposite lateral surfaces of the substrate being ground to a wedge having two perpendicular planes, and wherein the bias beam comprises a background beam to maintain the plasma oscillation reflection edge of the sample at a desired frequency, and an auxiliary beam to modulate the output beam, the background beam and the auxiliary beam being incident normal to the planes of the wedges.

Claim 25

An optical transistor comprising: a sample of semiconductor material for receiving an incident light beam having a frequency in an infrared wave band, said semiconductor material having a concentration of carriers sufficient to output said incident light beam as an output beam; a light source for producing a bias beam to irradiate a spot on the sample and thereby excite said carriers to move and maintain a plasma oscillation reflection edge of the sample at a desired frequency position; and another light source for producing a laser beam as a working beam which irradiates the sample within the spot produced by the bias beam, the plasma oscillation reflection edge of the sample having a frequency characteristic such that an intensity variation of the bias beam produces an intensity modulation of said output beam, wherein the sample has a thickness larger than a plasma absorption length, said sample being attached to a semiconductor substrate having a relatively broad forbidden band, and the bias beam and working beam are transmitted through a junction between the sample and the substrate, two opposite lateral surfaces on the substrate being ground to a slope such that an angle between the slope and a bonding plane between the substrate and the sample is greater than a total reflection angle of the bias beam but smaller than a total reflection angle on the boundary of the substrate and the sample, the bias beam being incident to the substrate perpendicular to a surface of the slope, and a semiconductor laser being grown on a plane of opposite sides of the substrate to supply the bias beam.

Claim 26

An optical transistor comprising: a sample of semiconductor material for receiving an incident light beam having a frequency in an infrared wave band, said semiconductor material having a concentration of carriers sufficient to output said incident light beam as an output beam; a light source for producing a bias beam to irradiate a spot on the sample and thereby excite said carriers to move and maintain a plasma oscillation reflection edge of the sample at a desired frequency position; and another light source for producing a laser beam as a working beam which irradiates the sample within the spot produced by the bias beam, the plasma oscillation reflection edge of the sample having a frequency characteristic such that an intensity variation of the bias beam produces an intensity modulation of said output beam, wherein the sample has a thickness larger than a plasma absorption length, said sample being attached to a semiconductor substrate having a relatively broad forbidden band, and the bias beam and working beam are transmitted through a junction between the sample and the substrate, two opposite lateral surfaces on the substrate being ground to a slope such that an angle between the slope and a bonding plane between the substrate and the sample is greater than a total reflection angle of the bias beam but smaller than a total reflection angle on the boundary of the substrate and the sample, the bias beam being incident to the substrate perpendicular to a surface of the slope, and a semiconductor laser being grown on a plane of opposite sides of the substrate to supply the bias beam.