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US5502326A
Expired / Lapsed
US
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Semiconductor device provided having a programmable element with a high-conductivity buried contact region
Assignee: NXP BV
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Filing: 1995-01-25
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Granted: 1996-03-26
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Expires: 2015-01-25
Abstract
Abstract A semiconductor device includes a programmable element having a doped semiconductor region (4) and a conductor region (6) which are separated from one another by at least a portion of an insulating layer (5). The conductor region (6) is of a material suitable for forming a rectifying junction (8) with the material of the semiconductor region (4). To achieve a comparatively high conductivity connection to the semiconductor region (4), the element is further provided with a contact region (3) which has a comparatively low electrical resistance compared with the semiconductor region (4). The contact region (3) is provided at a side of the semiconductor region (4) remote from the insulating layer (5) and is separated from the insulating layer (5) by the semiconductor region (4). Both the semiconductor region (4) and the contact region (5) are laterally bounded by an isolating region (7) at opposing sides. The invention thus offers a device provided with a programmable element of a substantially more compact structure than a comparable conventional programmable element.
Inventors
- 👤 Jan W. Slotboom
- 👤 Pierre H. Woerlee
- 👤 Reinout Woltjer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:11
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S257/00; Y10S257/91
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
201 words
A semiconductor device with a semiconductor body and a programmable memory element comprising a doped semiconductor region and a conductor region which are everywhere separated from one another in the unprogrammed state by at least a portion of an insulating layer, the conductor region comprising a material which is suitable for forming a rectifying junction with the material of the doped semiconductor region, said rectifying junction being formed in the programmed state, the programmable memory element comprising a contact region which contacts the doped semiconductor region and the semiconductor body, and said contact region has a comparatively low electrical resistivity compared to that of said doped semiconductor region, characterized in that the contact region is provided at a side of the doped semiconductor region remote from the insulating layer and is separated from the insulating layer by the doped semiconductor region, in that the doped semiconductor region and the contact region form a narrow vertical stack, and in that both the doped semiconductor region and the contact region are laterally bounded by a narrow dielectric isolation region at mutually opposing sides, said narrow dielectric isolation region extending to a greater depth in said semiconductor body than that of said contact region.
Claim 2
Dependent Claim
201 words
A semiconductor device with a semiconductor body and a programmable memory element comprising a doped semiconductor region and a conductor region which are everywhere separated from one another in the unprogrammed state by at least a portion of an insulating layer, the conductor region comprising a material which is suitable for forming a rectifying junction with the material of the doped semiconductor region, said rectifying junction being formed in the programmed state, the programmable memory element comprising a contact region which contacts the doped semiconductor region and the semiconductor body, and said contact region has a comparatively low electrical resistivity compared to that of said doped semiconductor region, characterized in that the contact region is provided at a side of the doped semiconductor region remote from the insulating layer and is separated from the insulating layer by the doped semiconductor region, in that the doped semiconductor region and the contact region form a narrow vertical stack, and in that both the doped semiconductor region and the contact region are laterally bounded by a narrow dielectric isolation region at mutually opposing sides, said narrow dielectric isolation region extending to a greater depth in said semiconductor body than that of said contact region.
Claim 3
Dependent Claim
37 words
A semiconductor device as claimed in claim 1, characterized in that the isolation region comprises a groove which bounds the semiconductor region and the contact region laterally and which is coated with at least an insulating layer.
Claim 4
Dependent Claim
20 words
A semiconductor device as claimed in claim 2, characterized in that the groove is filled up with a suitable filler.
Claim 5
Dependent Claim
64 words
A semiconductor device as claimed in any one of the claim 1, characterized in that both the semiconductor region and the contact region form part of a first strip-shaped conductor track which is laterally bounded by the isolation region and in that the conductor region forms part of a second strip-shaped conductor track which extends transverse to the direction of the first conductor track.
Claim 6
Dependent Claim
46 words
A semiconductor device as claimed in claim 4, characterized in that the first conductor track is formed by a first semiconductor track of a first conductivity type, and in that the contact region comprises a comparatively heavily doped buried semiconductor zone of the first conductivity type.
Claim 7
Dependent Claim
34 words
A semiconductor device as claimed in claim 5, characterized in that the second conductor track comprises a second semiconductor track of a second, opposite conductivity type which is provided over the first semiconductor track.
Claim 8
Dependent Claim
32 words
A semiconductor device as claimed in claim 5, characterized in that the second conductor track comprises a material which is suitable for forming a rectifying Schottky junction with the first conductor track.
Claim 9
Dependent Claim
70 words
A semiconductor device as claimed in claim 5, characterized in that the first semiconductor track is situated on a semiconductor substrate, in that the first conductor track forms a pn junction at least with a surface region of the semiconductor substrate, which pn junction is reverse biased during operation, and in that the isolating region which laterally bounds the first semiconductor track extends at least up to the surface region.
Claim 10
Dependent Claim
53 words
A semiconductor device as claimed in claim 4, characterized in that the first conductor track is provided on a dielectric intermediate layer which separates the first conductor track from a subjacent semiconductor substrate, and in that the isolating region which laterally bounds the first conductor track extends down to the dielectric intermediate layer.
Claim 11
Dependent Claim
62 words
A semiconductor device as claimed in claim 9, characterized in that the first conductor track is formed by a composite layer comprising a bottom layer containing metal which adjoins the dielectric intermediate layer and of which the contact region forms part, and comprising a top layer of semiconductor material which adjoins the insulating layer and of which the semiconductor region forms part.
Claim 12
Dependent Claim
98 words
A semiconductor device provided with a matrix of memory cells which each comprise a programmable element as claimed in claim 1, characterized in that the matrix is composed of a number (n) of parallel first conductor tracks which extend in a first direction and by a number (m) of parallel second conductor tracks which extend in a second direction transverse to the first direction, in that the first conductor tracks are laterally bounded by strip-shaped isolating regions, and in that the first conductor tracks and the second conductor tracks are separated from one another by the insulating layer.
Claim 13
Dependent Claim
43 words
A semiconductor device as claimed in claim 11, characterized in that the matrix is separated from a subjacent semiconductor body by a dielectric intermediate layer, and in that at least a semiconductor switching element is provided below the matrix in the semiconductor body.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-26 | 1999-09-25 | 2000-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-26 | 2003-09-25 | 2004-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-26 | 2007-09-25 | 2008-03-26 | $7700.00 | Window Closed / Lapsed |