US5500102A
Expired / Lapsed
US
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Method of forming deposited semiconductor film
Assignee: Canon Inc
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Filing: 1994-05-09
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Granted: 1996-03-19
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Expires: 2014-05-09
Abstract
Abstract A method of forming a deposited semiconductor film, comprising the steps of using a target containing semiconductor material to be deposited, an inert gas containing hydrogen at 0.1 at % or more and sputtering energy of a high frequency of 50 MHz or higher, and employing a reactive sputtering method, wherein a sputter deposition process, in which a semiconductor film, the main component of which is the material to be deposited and the thickness of which is 10 nm or thinner, is formed on a substrate, and an irradiation process, in which a surface of the deposited film is irradiated with plasma in an atmosphere containing hydrogen, are alternately repeated, and a DC or high frequency bias voltage is applied to said target and/or said substrate.
Inventors
- 👤 Takeshi Ichikawa
- 👤 Hitoshi Shindo
- 👤 Kazuaki Ohmi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:20
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/22; C23C14/34; C23C14/35; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3454; H10P14/36; H10P14/3602
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
114 words
A method of forming a deposited semiconductor film on a substrate comprising the steps of: (a) reactively sputtering an amorphous semiconductor film on said substrate employing (i) a target containing semiconductor material to be deposited, (ii) an inert gas containing at least 0.1 atomic % hydrogen, and (iii) a high frequency sputtering discharge of at least 50 MHz; (b) irradiating the surface of said amorphous semiconductor film with plasma in an atmosphere containing hydrogen; and (c) alternately repeating said steps (a) and (b) by changing target bias voltage; wherein said amorphous semiconductor film contains, as a main component, said semiconductor material and said amorphous semiconductor film is no greater than 10 nm in thickness.
Claim 2
Independent Claim
114 words
A method of forming a deposited semiconductor film on a substrate comprising the steps of: (a) reactively sputtering an amorphous semiconductor film on said substrate employing (i) a target containing semiconductor material to be deposited, (ii) an inert gas containing at least 0.1 atomic % hydrogen, and (iii) a high frequency sputtering discharge of at least 50 MHz; (b) irradiating the surface of said amorphous semiconductor film with plasma in an atmosphere containing hydrogen; and (c) alternately repeating said steps (a) and (b) by changing target bias voltage; wherein said amorphous semiconductor film contains, as a main component, said semiconductor material and said amorphous semiconductor film is no greater than 10 nm in thickness.
Claim 3
Dependent Claim
24 words
The method of claim 1 including applying a DC or high frequency bias voltage to at least one of said target and said substrate.
Claim 4
Dependent Claim
26 words
The method of claim 1 including employing a partial pressure of gases other than said inert gas and hydrogen of no greater than 10 -8 Torr.
Claim 5
Dependent Claim
19 words
The method of claim 1 including depositing silicon or a silicon alloy as said semiconductor material to be deposited.
References Cited (Backward Citations)
JPS5216990A
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JPS5486341A
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JPS6350025A
Cited
US5194398A
Cited
JPH0365013A
Cited
JPH0465120A
Cited
US5248348A
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US5288658A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-03-19 | 1999-09-18 | 2000-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-19 | 2003-09-18 | 2004-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-19 | 2007-09-18 | 2008-03-19 | $7700.00 | Window Closed / Lapsed |