Electrophotographic photoreceptor
Abstract
Abstract PURPOSE: To enhance heat resistance, humidity resistance, light resistance, corona ion resistance, etc., to stabilize electrophotographic characteristics, and to prevent deterioration even in repeated uses, by composing a photoconductive layer principally with amorphous silicon. CONSTITUTION: On conductive substrate 2 photoconductive layer 3 is formed consisting mainly of amorphous silicon, for example, by the glow discharge method, and having free surface 4 to form electophotographic photoreceptor 1. Layer 3 is controlled, e.g. to 10W40 % by atom, preferably 15W30 % in H content by doping so as to satisfy the value of dark resistance required for the photoconductive layer of an electrophotographic photoreceptor. This permits easy formation of a closed system device in manufacture, avoidance of ill effects on human bodies, and prevention of the products in use from affecting human bodies, organisms, or natural environments as well as prevention of environmental pollution. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Yutaka Hirai
- 👤 Toshiyuki Komatsu
- 👤 Katsumi Nakagawa
- 👤 Teruo Misumi
- 👤 Tadaharu Fukuda
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