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US5497028A
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LC element and semiconductor device having a signal transmission line and LC element manufacturing method
Assignee: NSC Co Ltd
•
Filing: 1994-11-02
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Granted: 1996-03-05
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Expires: 2014-11-02
Abstract
Abstract An LC element and an semiconductor device comprising a second electrode having a predetermined shape formed in direct contact with the surface of a semiconductor substrate, and a first electrode having a predetermined shape formed interspaced by an insulation layer on the semiconductor substrate surface; and a method of manufacturing the LC element. A channel formed along the first electrode on application of a predetermined gate voltage to a control electrode connected to the first electrode and the second electrode respectively function as inductors, while a distributed constant type capacitor is also formed between these; and by using the channel as a signal transmission line, the LC element and a semiconductor device give excellent attenuation characteristics. The LC element and semiconductor device are easily manufactured, while parts assembly work in subsequent processing can be abbreviated, formation as a portion of an IC or LSI device is possible, and characteristics can also be controlled.
Inventors
- 👤 Takeshi Ikeda
- 👤 Susumu Okamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 19:00
CPC Classifications
H; H10; H10D; H10D84/00; H03; H03H; H03H7/00; H03H7/01; H03H7/0115; H01; H01F; H01F17/00; H01F17/0006; H01F2017/008; H03H1/00; H03H2001/0021; H03H2001/0064; H03H2001/0078; Y; Y10; Y10S; Y10S438/00; Y10S438/901
Claims Analysis
Total Claims: 86
Claim 1
Independent Claim
122 words
An LC element comprising: a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed on said semiconductor substrate at an area adjacent to said first electrode, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a first diffusion region formed near one end of said channel, a second diffusion region formed near the other end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from at least said channel.
Claim 2
Dependent Claim
122 words
An LC element comprising: a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed on said semiconductor substrate at an area adjacent to said first electrode, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a first diffusion region formed near one end of said channel, a second diffusion region formed near the other end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from at least said channel.
Claim 3
Dependent Claim
84 words
An LC element according to claim 1, further comprising: first and second input/output electrodes electrically connected respectively to said first and second diffusion regions, and a ground electrode electrically connected near one end of said second electrode, wherein a signal is input to one of said first and second input/output electrodes and an output signal is obtained from the other one of the first and second input/output electrodes, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 4
Dependent Claim
16 words
An LC element according to claim 2, wherein said first and second electrodes comprise spiral shapes.
Claim 5
Dependent Claim
41 words
An LC element according to claim 3, wherein only said channel is used as a signal transmission line, said second electrode is divided into a plurality of electrode segments, and the respective divided plurality of electrode segments are mutually connected electrically.
Claim 6
Dependent Claim
21 words
An LC element according to claim 3, wherein by a gate voltage applied to said first electrode controls a channel resistance.
Claim 7
Dependent Claim
16 words
An LC element according to claim 2, wherein said first and second electrodes comprise meander shapes.
Claim 8
Dependent Claim
41 words
An LC element according to claim 6, wherein only said channel is used as a signal transmission line, said second electrode is divided into a plurality of electrode segments, and the respective divided plurality of electrode segments are mutually connected electrically.
Claim 9
Dependent Claim
21 words
An LC element according to claim 6, wherein by a gate voltage applied to said first electrode controls a channel resistance.
Claim 10
Dependent Claim
17 words
An LC element according to claim 2, wherein said first and second electrodes comprise curved line shapes.
Claim 11
Dependent Claim
17 words
An LC element according to claim 2, wherein said first and second electrodes comprise straight line shapes.
Claim 12
Dependent Claim
41 words
An LC element according to claim 2, wherein only said channel is used as a signal transmission line, said second electrode is divided into a plurality of electrode segments, and the respective divided plurality of electrode segments are mutually connected electrically.
Claim 13
Dependent Claim
20 words
An LC element according to claim 2, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 14
Dependent Claim
36 words
An LC element according to claim 2, wherein said semiconductor substrate is a semiconductor substrate comprising an inversion layer comprising one of an n region and a p region formed along said first and second electrodes.
Claim 15
Dependent Claim
36 words
An LC element according to claim 2, wherein a value of the distributed constant type capacitor is changed by setting a length of said second electrode either longer or shorter with respect to said first electrode.
Claim 16
Dependent Claim
23 words
An LC element according to claim 2, further comprising a buffer connected to the other one of the first and second input/output electrodes.
Claim 17
Dependent Claim
55 words
An LC element according to claim 1, further comprising: first and second input/output electrodes electrically connected respectively to said first and second diffusion regions, third and fourth input/output electrodes electrically connected respectively to one end and the other end of said second electrode, and signal transmission lines formed from said channel and said second electrode.
Claim 18
Dependent Claim
16 words
An LC element according to claim 16, wherein said first and second electrodes comprise spiral shapes.
Claim 19
Dependent Claim
21 words
An LC element according to claim 17, wherein by a gate voltage applied to said first electrode controls a channel resistance.
Claim 20
Dependent Claim
16 words
An LC element according to claim 16, wherein said first and second electrodes comprise meander shapes.
Claim 21
Dependent Claim
20 words
An LC element according to claim 19, wherein by a gate voltage applied to said first electrode controls channel resistance.
Claim 22
Dependent Claim
17 words
An LC element according to claim 16, wherein said first and second electrodes comprise curved line shapes.
Claim 23
Dependent Claim
17 words
An LC element according to claim 16, wherein said first and second electrodes comprise straight line shapes.
Claim 24
Dependent Claim
20 words
An LC element according to claim 16, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 25
Dependent Claim
36 words
An LC element according to claim 16, wherein said semiconductor substrate is a semiconductor substrate comprising an inversion layer comprising one of an n region and a p region formed along said first and second electrodes.
Claim 26
Dependent Claim
36 words
An LC element according to claim 16, wherein a value of the distributed constant type capacitor is changed by setting a length of said second electrode either longer or shorter with respect to said first electrode.
Claim 27
Dependent Claim
26 words
An LC element according to claim 16, further comprising a buffer connected to one of the third and fourth input/out electrodes connected to the second electrode.
Claim 28
Dependent Claim
129 words
An LC element comprising: a first electrode having a predetermined shape functioning as a gate, said first electrode formed on an insulation layer on one side of a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed at a position essentially opposing said first electrode on an opposite side of said semiconductor substrate, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a first diffusion region formed near one end of the channel, a second diffusion region formed near the other end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from at least said channel.
Claim 29
Dependent Claim
129 words
An LC element comprising: a first electrode having a predetermined shape functioning as a gate, said first electrode formed on an insulation layer on one side of a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed at a position essentially opposing said first electrode on an opposite side of said semiconductor substrate, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a first diffusion region formed near one end of the channel, a second diffusion region formed near the other end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from at least said channel.
Claim 30
Dependent Claim
84 words
An LC element according to claim 27, further comprising: first and second input/output electrodes electrically connected respectively to said first and second diffusion regions, and a ground electrode electrically connected near one end of said second electrode, wherein a signal is input to one of said first and second input/output electrodes and an output signal is obtained from the other one of the first and second input/output electrodes, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 31
Dependent Claim
16 words
An LC element according to claim 28, wherein said first and second electrodes comprise spiral shapes.
Claim 32
Dependent Claim
41 words
An LC element according to claim 29, wherein only said channel is used as a signal transmission line, said second electrode is divided into a plurality of electrode segments, and the respective divided plurality of electrode segments are mutually connected electrically.
Claim 33
Dependent Claim
20 words
An LC element according to claim 29, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 34
Dependent Claim
16 words
An LC element according to claim 28, wherein said first and second electrodes comprise meander shapes.
Claim 35
Dependent Claim
38 words
An LC element according to claim 32, wherein only said channel is used as a signal transmission line, said second electrode is divided into a plurality, and the respective divided plurality of electrode segments are mutually connected electrically.
Claim 36
Dependent Claim
20 words
An LC element according to claim 32, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 37
Dependent Claim
17 words
An LC element according to claim 28, wherein said first and second electrodes comprise curved line shapes.
Claim 38
Dependent Claim
17 words
An LC element according to claim 28, wherein said first and second electrodes comprise straight line shapes.
Claim 39
Dependent Claim
41 words
An LC element according to claim 28, wherein only said channel is used as a signal transmission line, said second electrode is divided into a plurality of electrode segments, and the respective divided plurality of electrode segments are mutually connected electrically.
Claim 40
Dependent Claim
20 words
An LC element according to claim 28, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 41
Dependent Claim
42 words
An LC element according to claim 28, wherein said semiconductor substrate is a semiconductor substrate comprising an inversion layer comprising one of an n region and a p region formed between portions of said first electrode and portions of said second electrode.
Claim 42
Dependent Claim
36 words
An LC element according to claim 28, wherein a value of said distributed constant type capacitor is changed by setting a length of said second electrode either longer or shorter with respect to said first electrode.
Claim 43
Dependent Claim
23 words
An LC element according to claim 28, further comprising a buffer connected to the other one of the first and second input/output electrodes.
Claim 44
Dependent Claim
55 words
An LC element according to claim 27, further comprising: first and second input/output electrodes electrically connected respectively to said first and second diffusion regions, third and fourth input/output electrodes electrically connected respectively to one end and the other end of said second electrode, and signal transmission lines formed from the channel and said second electrode.
Claim 45
Dependent Claim
16 words
An LC element according to claim 42, wherein said first and second electrodes comprise spiral shapes.
Claim 46
Dependent Claim
20 words
An LC element according to claim 43, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 47
Dependent Claim
16 words
An LC element according to claim 42, wherein said first and second electrodes comprise meander shapes.
Claim 48
Dependent Claim
20 words
An LC element according to claim 45, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 49
Dependent Claim
17 words
An LC element according to claim 42, wherein said first and second electrodes comprise curved line shapes.
Claim 50
Dependent Claim
17 words
An LC element according to claim 42, wherein said first and second electrodes comprise straight line shapes.
Claim 51
Dependent Claim
20 words
An LC element according to claim 42, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 52
Dependent Claim
42 words
An LC element according to claim 42, wherein said semiconductor substrate is a semiconductor substrate comprising an inversion layer comprising one of an n region and a p region formed between portions of said first electrode and portions of said second electrode.
Claim 53
Dependent Claim
36 words
An LC element according to claim 42, wherein a value of said distributed constant type capacitor is changed by setting a length of said second electrode either longer or shorter with respect to said first electrode.
Claim 54
Dependent Claim
26 words
An LC element according to claim 42, further comprising a buffer connected to one of the third and fourth input/output electrodes connected to the second electrode.
Claim 55
Dependent Claim
108 words
An LC element comprising: a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed on said semiconductor substrate at an area adjacent to said first electrode, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a diffusion region formed near one end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from said second electrode.
Claim 56
Dependent Claim
108 words
An LC element comprising: a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed on said semiconductor substrate at an area adjacent to said first electrode, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a diffusion region formed near one end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from said second electrode.
Claim 57
Dependent Claim
85 words
An LC element according to claim 53, further comprising: first and second input/output electrodes electrically connected respectively to one end and the other end of said second electrode, and a ground electrode electrically connected to said diffusion region, wherein a signal is input to one of said first and second input/output electrodes and an output signal is obtained from the other one of the first and second input/output electrodes, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 58
Dependent Claim
16 words
An LC element according to claim 54, wherein said first and second electrodes comprise spiral shapes.
Claim 59
Dependent Claim
75 words
An LC element according to claim 55, further comprising a plurality of diffusion regions and a plurality of channels, wherein said first electrode is divided into a plurality of electrode segments, said plurality of channels are formed in said semiconductor substrate at areas respectively corresponding to said plurality of electrode segments, each diffusion region is provided near one end of one of the plurality of channels, and the plurality of diffusion regions are electrically connected.
Claim 60
Dependent Claim
20 words
An LC element according to claim 55, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 61
Dependent Claim
16 words
An LC element according to claim 54, wherein said first and second electrodes comprise meander shapes.
Claim 62
Dependent Claim
75 words
An LC element according to claim 58, further comprising a plurality of diffusion regions and a plurality of channels, wherein said first electrode is divided into a plurality of electrode segments, said plurality of channels are formed in said semiconductor substrate at areas respectively corresponding to said plurality of electrode segments, each diffusion region is provided near one end of one of the plurality of channels, and the plurality of diffusion regions are electrically connected.
Claim 63
Dependent Claim
20 words
An LC element according to claim 58, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 64
Dependent Claim
17 words
An LC element according to claim 54, wherein said first and second electrodes comprise curved line shapes.
Claim 65
Dependent Claim
17 words
An LC element according to claim 54, wherein said first and second electrodes comprise straight line shapes.
Claim 66
Dependent Claim
75 words
An LC element according to claim 54, further comprising a plurality of diffusion regions and a plurality of channels, wherein said first electrode is divided into a plurality of electrode segments, said plurality of channels are formed in said semiconductor substrate at areas respectively corresponding to said plurality of electrode segments, each diffusion region is provided near one end of one of the plurality of channels, and the plurality of diffusion regions are electrically connected.
Claim 67
Dependent Claim
20 words
An LC element according to claim 54, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 68
Dependent Claim
36 words
An LC element according to claim 54, wherein said semiconductor substrate is a semiconductor substrate comprising an inversion layer comprising one of an n region and a p region formed along said first and second electrodes.
Claim 69
Dependent Claim
36 words
An LC element according to claim 54, wherein a value of said distributed constant type capacitor is changed by setting a length of said second electrode either longer or shorter with respect to said first electrode.
Claim 70
Dependent Claim
23 words
An LC element according to claim 54, further comprising a buffer connected to the other one of the first and second input/output electrodes.
Claim 71
Dependent Claim
113 words
An LC element comprising: a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed at an essentially opposing position to said first electrode on an opposite side of said semiconductor substrate, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a diffusion region formed near one end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from said second electrode.
Claim 72
Dependent Claim
113 words
An LC element comprising: a first electrode functioning as a gate having a predetermined shape, said first electrode formed on an insulation layer on a semiconductor substrate, a second electrode having a predetermined shape, said second electrode formed at an essentially opposing position to said first electrode on an opposite side of said semiconductor substrate, a channel formed in said semiconductor substrate at an area corresponding to said first electrode, a diffusion region formed near one end of said channel, inductors respectively formed from said channel and said second electrode, a distributed constant type capacitor formed between said channel and said second electrode, and a signal transmission line formed from said second electrode.
Claim 73
Dependent Claim
85 words
An LC element according to claim 68, further comprising: first and second input/output electrodes electrically connected respectively to one end and the other end of said second electrode, and a ground electrode electrically connected to said diffusion region, wherein a signal is input to one of said first and second input/output electrodes and an output signal is obtained from the other one of the first and second input/output electrodes, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 74
Dependent Claim
16 words
An LC element according to claim 69, wherein said first and second electrodes comprise spiral shapes.
Claim 75
Dependent Claim
75 words
An LC element according to claim 70, further comprising a plurality of diffusion regions and a plurality of channels, wherein said first electrode is divided into a plurality of electrode segments, said plurality of channels are formed in said semiconductor substrate at areas respectively corresponding to said plurality of electrode segments, each diffusion region is provided near one end of one of the plurality of channels, and the plurality of diffusion regions are electrically connected.
Claim 76
Dependent Claim
20 words
An LC element according to claim 70, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 77
Dependent Claim
16 words
An LC element according to claim 69, wherein said first and second electrodes comprise meander shapes.
Claim 78
Dependent Claim
75 words
An LC element according to claim 73, further comprising a plurality of diffusion regions and a plurality of channels, wherein said first electrode is divided into a plurality of electrode segments, said plurality of channels are formed in said semiconductor substrate at areas respectively corresponding to said plurality of electrode segments, each diffusion region is provided near one end of one of the plurality of channels, and the plurality of diffusion regions are electrically connected.
Claim 79
Dependent Claim
20 words
An LC element according to claim 73, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 80
Dependent Claim
17 words
An LC element according to claim 69, wherein said first and second electrodes comprise curved line shapes.
Claim 81
Dependent Claim
17 words
An LC element according to claim 69, wherein said first and second electrodes comprise straight line shapes.
Claim 82
Dependent Claim
75 words
An LC element according to claim 69, further comprising a plurality of diffusion regions and a plurality of channels, wherein said first electrode is divided into a plurality of electrode segments, said plurality of channels are formed in said semiconductor substrate at areas respectively corresponding to said plurality of electrode segments, each diffusion region is provided near one end of one of the plurality of channels, and the plurality of diffusion regions are electrically connected.
Claim 83
Dependent Claim
20 words
An LC element according to claim 69, wherein a gate voltage applied to said first electrode controls a channel resistance.
Claim 84
Dependent Claim
47 words
An LC element according to claim 69, wherein said semiconductor substrate is a semiconductor substrate comprising an inversion layer comprising one of an n region and a p region formed between neighboring conductor portions of said first electrode and between neighboring conductor portions of said second electrode.
Claim 85
Dependent Claim
36 words
An LC element according to claim 69, wherein a value of said distributed constant type capacitor is changed by setting a length of said second electrode either longer or shorter with respect to said first electrode.
Claim 86
Dependent Claim
23 words
An LC element according to claim 69, further comprising a buffer connected to the other one of said first and second input/output electrodes.
References Cited (Backward Citations)
US5070317A
Cited
US5039964A
Cited
US5111169A
Cited
US5132650A
Cited
US5095357A
Cited
JPH03259608A
Cited
US5278526A
Cited
US5367275A
Cited
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