Patent US5496775A successfully refreshed from Google Patents.
US5496775A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having ball-bonded pads
Assignee: Micron Technology Inc
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Filing: 1994-04-08
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Granted: 1996-03-05
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Expires: 2014-04-08
Abstract
Abstract An integrated circuit (IC) device comprises towers of bonded gold balls located on each bond pad. The towers allow for early encapsulation of the IC die. The IC can then be tested and attached to tab tape or a printed circuit board without particulate contamination concerns.
Inventors
- 👤 J. M. Brooks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:43
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10D; H10D62/00; H10D62/10; H10D62/117; H10W74/00; H10W74/10; H10W74/111; H10W72/01; H10W72/013; H10W72/01331; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/251; H10W72/252; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49004; Y10T29/49117; Y10T29/49124; Y10T29/49147; Y10T29/49149; Y10T29/49204; Y10T29/49208; Y10T29/4921; Y10T29/49211; Y10T29/49213; Y10T29/49222
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
138 words
A process for forming a semiconductor device, comprising the following steps: a) forming a semiconductor die having a back and a front, said front having pads thereon; b) forming a tower of conductive balls on at least one of said pads; c) providing a cavity bar holder having a cavity therein; d) forming a first layer of encapsulation material within said cavity, thereby partially filling said cavity with said first layer of encapsulation material; e) placing said back of said semiconductor die in contact with said first layer of encapsulation material; f) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, thereby encapsulating said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed; and g) removing the encapsulated die from said cavity.
Claim 2
Dependent Claim
138 words
A process for forming a semiconductor device, comprising the following steps: a) forming a semiconductor die having a back and a front, said front having pads thereon; b) forming a tower of conductive balls on at least one of said pads; c) providing a cavity bar holder having a cavity therein; d) forming a first layer of encapsulation material within said cavity, thereby partially filling said cavity with said first layer of encapsulation material; e) placing said back of said semiconductor die in contact with said first layer of encapsulation material; f) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, thereby encapsulating said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed; and g) removing the encapsulated die from said cavity.
Claim 3
Dependent Claim
13 words
The process of claim 1, wherein said conductive balls are formed by welding.
Claim 4
Dependent Claim
28 words
The process of claim 1 wherein each of said balls has a height and a diameter and said height is between about 1/2 and 2/3 of said diameter.
Claim 5
Dependent Claim
21 words
The process of claim 1 wherein said balls comprise a material selected from the group consisting of gold, aluminum, and palladium.
Claim 6
Dependent Claim
16 words
The process of claim 1 wherein said tower is about 20 mils or less in height.
Claim 7
Dependent Claim
22 words
The process of claim 1 wherein at least one of said balls is completely encased by said second layer of encapsulation material.
Claim 8
Dependent Claim
152 words
A process for forming a semiconductor device having no lead frame and no paddle, comprising the following steps: a) forming a semiconductor die having a back and a front, said front having pads thereon; b) forming a tower of conductive balls on at least one of said pads; c) providing a cavity bar holder having a cavity therein; d) forming a first layer of encapsulation material within said cavity; e) placing said back of said semiconductor die in contact with said first layer of encapsulation material; f) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, said first layer of encapsulation material supporting said die during encapsulation of said die with said second encapsulation layer, thereby sealing said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed; and g) removing the encapsulated die from said cavity.
Claim 9
Dependent Claim
152 words
A process for forming a semiconductor device having no lead frame and no paddle, comprising the following steps: a) forming a semiconductor die having a back and a front, said front having pads thereon; b) forming a tower of conductive balls on at least one of said pads; c) providing a cavity bar holder having a cavity therein; d) forming a first layer of encapsulation material within said cavity; e) placing said back of said semiconductor die in contact with said first layer of encapsulation material; f) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, said first layer of encapsulation material supporting said die during encapsulation of said die with said second encapsulation layer, thereby sealing said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed; and g) removing the encapsulated die from said cavity.
Claim 10
Dependent Claim
13 words
The process of claim 7, wherein said conductive balls are formed by welding.
Claim 11
Dependent Claim
28 words
The process of claim 7 wherein each of said balls has a height and a diameter and said height is between about 1/2 and 2/3 of said diameter.
Claim 12
Dependent Claim
21 words
The process of claim 7 wherein said balls comprise a material selected from the group consisting of gold, aluminum, and palladium.
Claim 13
Dependent Claim
16 words
The process of claim 7 wherein said tower is about 20 mils or less in height.
Claim 14
Dependent Claim
22 words
The process of claim 7 wherein at least one of said balls is completely encased by said second layer of encapsulation material.
Claim 15
Dependent Claim
204 words
A process for forming a semiconductor device having no lead frame and no paddle, comprising the following steps: a) forming a semiconductor die having a back and a front, said front having pads thereon; b) forming a first conductive ball on at least one of said pads; c) welding a second conductive ball to each of said first conductive balls, and welding a third conductive ball to each of said second conductive balls, said first, second, and third conductive balls on each of said pads forming a tower; d) providing a cavity bar holder having a cavity therein; e) forming a first layer of encapsulation material within said cavity, thereby partially filling said cavity with said first layer of encapsulation material; f) placing said back of said semiconductor die in contact with said first layer of encapsulation material; g) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, said first layer of encapsulation material supporting said die during encapsulation of said die with said second encapsulation layer, thereby sealing said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed; and h) removing said encapsulated die from said cavity.
Claim 16
Dependent Claim
204 words
A process for forming a semiconductor device having no lead frame and no paddle, comprising the following steps: a) forming a semiconductor die having a back and a front, said front having pads thereon; b) forming a first conductive ball on at least one of said pads; c) welding a second conductive ball to each of said first conductive balls, and welding a third conductive ball to each of said second conductive balls, said first, second, and third conductive balls on each of said pads forming a tower; d) providing a cavity bar holder having a cavity therein; e) forming a first layer of encapsulation material within said cavity, thereby partially filling said cavity with said first layer of encapsulation material; f) placing said back of said semiconductor die in contact with said first layer of encapsulation material; g) forming a second layer of encapsulation material within said cavity to cover said semiconductor die, said first layer of encapsulation material supporting said die during encapsulation of said die with said second encapsulation layer, thereby sealing said die with said first and second layers of encapsulation material and leaving a portion of each said tower exposed; and h) removing said encapsulated die from said cavity.
Claim 17
Dependent Claim
28 words
The process of claim 13 wherein each of said balls has a height and a diameter and said height is between about 1/2 and 2/3 of said diameter.
Claim 18
Dependent Claim
21 words
The process of claim 13 wherein said balls comprise a material selected from the group consisting of gold, aluminum, and palladium.
Claim 19
Dependent Claim
16 words
The process of claim 13 wherein said tower is about 20 mils or less in height.
Claim 20
Dependent Claim
21 words
The process of claim 13 wherein each of said first balls is completely encased by said second layer of encapsulation material.
Claim 21
Dependent Claim
70 words
A process for forming a semiconductor device, comprising the following steps: a) providing a cavity bar holder having a cavity therein; b) forming a first layer of encapsulation material within said cavity; c) placing a semiconductor die in contact with said first layer of encapsulation material; d) forming a second layer of encapsulation material within said cavity to encapsulate said die; and e) removing said encapsulated die from said cavity.
Claim 22
Dependent Claim
70 words
A process for forming a semiconductor device, comprising the following steps: a) providing a cavity bar holder having a cavity therein; b) forming a first layer of encapsulation material within said cavity; c) placing a semiconductor die in contact with said first layer of encapsulation material; d) forming a second layer of encapsulation material within said cavity to encapsulate said die; and e) removing said encapsulated die from said cavity.
Claim 23
Dependent Claim
22 words
The process of claim 18 wherein said die comprises pads, further comprising the step of forming a conductive ball on said pad.
Claim 24
Dependent Claim
25 words
The method of claim 18 further comprising forming a first conductive ball on said pad and a second conductive ball on said first conductive ball.
Claim 25
Dependent Claim
15 words
The process of claim 20 wherein said first ball is encased by said encapsulation material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-05 | 1999-09-04 | 2000-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-05 | 2003-09-04 | 2004-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-05 | 2007-09-04 | 2008-03-05 | $7700.00 | Window Closed / Lapsed |