Method of fabricating a semiconductor nonvolatile storage device

Claim 1

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; forming a tunnel oxide film on the exposed surface of said silicon substrate; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a charge trapping silicon nitride film or a charge trapping polycrystalline silicon film on said tunnel oxide film which was subjected to the thermal nitriding; and removing said shielding silicon nitride film at any step after the formation of the charge trapping film.

Claim 2

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; forming a tunnel oxide film on the exposed surface of said silicon substrate; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a charge trapping silicon nitride film or a charge trapping polycrystalline silicon film on said tunnel oxide film which was subjected to the thermal nitriding; and removing said shielding silicon nitride film at any step after the formation of the charge trapping film.

Claim 3

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a tunnel oxide film; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a memory nitride film on said tunnel oxide film which was subjected to the thermal nitriding; subjecting said memory nitride film to a thermal oxidation to thereby form a top oxide film; selectively removing said top oxide film and said memory nitride film so that they remain at least on said tunnel oxide film; successively to the previous step, removing said shielding silicon nitride film and said sacrificial oxide film to thereby expose the surface of said silicon substrate; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a gate insulator film; forming a gate electrode film member over said silicon substrate on which said gate insulator film is formed; and selectively removing said gate electrode film member to thereby form a nonvolatile storage element gate portion and a peripheral circuit gate portion.

Claim 4

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a tunnel oxide film; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a memory nitride film on said tunnel oxide film which was subjected to the thermal nitriding; subjecting said memory nitride film to a thermal oxidation to thereby form a top oxide film; selectively removing said top oxide film and said memory nitride film so that they remain at least on said tunnel oxide film; successively to the previous step, removing said shielding silicon nitride film and said sacrificial oxide film to thereby expose the surface of said silicon substrate; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a gate insulator film; forming a gate electrode film member over said silicon substrate on which said gate insulator film is formed; and selectively removing said gate electrode film member to thereby form a nonvolatile storage element gate portion and a peripheral circuit gate portion.

Claim 5

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a tunnel oxide film; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a memory nitride film over said tunnel oxide which was subjected to the thermal nitriding and forming an oxide film on the surface of the memory nitride film; selectively removing said memory nitride film so that it remains at least on said tunnel oxide film; successively to the previous step, removing said shielding silicon nitride film and said sacrificial oxide film to thereby expose the surface of said silicon substrate; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a gate insulator film; selectively removing the oxide film on the surface of said memory nitride film; forming a gate electrode film member on said silicon substrate on which said gate insulator film is formed; and selectively removing said gate electrode film member to thereby form a nonvolatile storage element gate portion and a peripheral circuit gate portion.

Claim 6

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a tunnel oxide film; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a memory nitride film over said tunnel oxide which was subjected to the thermal nitriding and forming an oxide film on the surface of the memory nitride film; selectively removing said memory nitride film so that it remains at least on said tunnel oxide film; successively to the previous step, removing said shielding silicon nitride film and said sacrificial oxide film to thereby expose the surface of said silicon substrate; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a gate insulator film; selectively removing the oxide film on the surface of said memory nitride film; forming a gate electrode film member on said silicon substrate on which said gate insulator film is formed; and selectively removing said gate electrode film member to thereby form a nonvolatile storage element gate portion and a peripheral circuit gate portion.

Claim 7

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a tunnel oxide film; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a charge trapping polycrystalline silicon film over said silicon substrate which was subjected to the thermal nitriding; and implanting impurities into said charge trapping polycrystalline silicon film; selectively removing said charge trapping polycrystalline silicon film so that it remains at least on said tunnel oxide film; successively to the step of selectively removing said charge trapping polycrystalline silicon film, removing said shielding silicon nitride film and said sacrificial oxide film to thereby expose the surface of said silicon substrate; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a gate insulator film; forming a gate electrode film member over said silicon substrate on which said gate insulator film is formed; and selectively removing said gate electrode film member to thereby form a nonvolatile storage element gate portion and a peripheral circuit gate portion.

Claim 8

A method of fabricating a semiconductor device comprising the steps of: forming a sacrificial oxide film on a silicon substrate; forming a shielding silicon nitride film over said silicon substrate on which said sacrificial oxide film is formed; selectively removing said shielding silicon nitride film and said sacrificial oxide film at storage element forming regions to thereby expose the surface of said silicon substrate within each of said storage element forming regions; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a tunnel oxide film; subjecting said tunnel oxide film to a thermal nitriding in an atmosphere including ammonia gas; forming a charge trapping polycrystalline silicon film over said silicon substrate which was subjected to the thermal nitriding; and implanting impurities into said charge trapping polycrystalline silicon film; selectively removing said charge trapping polycrystalline silicon film so that it remains at least on said tunnel oxide film; successively to the step of selectively removing said charge trapping polycrystalline silicon film, removing said shielding silicon nitride film and said sacrificial oxide film to thereby expose the surface of said silicon substrate; subjecting the exposed surface of said silicon substrate to a thermal oxidation to thereby form a gate insulator film; forming a gate electrode film member over said silicon substrate on which said gate insulator film is formed; and selectively removing said gate electrode film member to thereby form a nonvolatile storage element gate portion and a peripheral circuit gate portion.