US5494859A
Expired / Lapsed
US
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Low dielectric constant insulation layer for integrated circuit structure and method of making same
Assignee: LSI Corp
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Filing: 1994-02-04
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Granted: 1996-02-27
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Expires: 2014-02-04
Abstract
Abstract A low dielectric constant insulation layer for an integrated circuit structure material, and a method of making same. The low dielectric constant insulation layer comprises a porous insulation layer, preferably sandwiched between non-porous upper and lower insulation layers. The porous insulation layer is formed by depositing a composite layer comprising an insulation material or a material which can be converted to an insulation material, by a converting process and a material which can be converted to a gas upon subjection to the converting process. Release of the gas leaves behind a porous matrix of the insulation material which has a lower dielectric constant than the composite layer.
Inventors
- 👤 Ashok K. Kapoor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/6903; H10P14/6905; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6529; H10P14/6548; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/074; H10W20/075; H10W20/40; H10W20/45; H10W20/46; H10P14/6336; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6682; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10S; Y10S148/00; Y10S148/081
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
164 words
A process for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer which comprises: a) forming a composite layer comprising one or more materials which are convertible to a gas and one or more materials which either are themselves insulation materials or are convertible to insulation materials; and b) converting said composite layer to a porous low dielectric constant insulation layer, wherein: said step of forming said composite layer on said semiconductor wafer further comprises depositing said composite layer on said wafer by a chemical vapor deposition process; said step of forming said composite layer further comprises depositing on said semiconductor wafer a mixture comprising: a) polycrystalline silicon, comprising the material which is convertible to an insulation material; and b) carbon, comprising the material which is convertible to a gas; and said step of converting said composite layer comprises simultaneously oxidizing said polycrystalline silicon to form silicon dioxide and oxidizing said carbon to produce gaseous carbon dioxide.
Claim 2
Dependent Claim
164 words
A process for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer which comprises: a) forming a composite layer comprising one or more materials which are convertible to a gas and one or more materials which either are themselves insulation materials or are convertible to insulation materials; and b) converting said composite layer to a porous low dielectric constant insulation layer, wherein: said step of forming said composite layer on said semiconductor wafer further comprises depositing said composite layer on said wafer by a chemical vapor deposition process; said step of forming said composite layer further comprises depositing on said semiconductor wafer a mixture comprising: a) polycrystalline silicon, comprising the material which is convertible to an insulation material; and b) carbon, comprising the material which is convertible to a gas; and said step of converting said composite layer comprises simultaneously oxidizing said polycrystalline silicon to form silicon dioxide and oxidizing said carbon to produce gaseous carbon dioxide.
Claim 3
Dependent Claim
41 words
The process of claim 1 wherein one or more materials which either are themselves insulation materials or are convertible to insulation materials comprise about 10 wt % to about 90 wt % of said composite layer prior to said converting step.
Claim 4
Dependent Claim
26 words
The process of claim 1 wherein said step of forming said composite layer further comprises forming said composite layer with one or more optional dopants present.
Claim 5
Dependent Claim
23 words
The process of claim 1 including the further step of heating said composite layer to planarize said layer prior to said converting step.
Claim 6
Dependent Claim
86 words
The process of claim 1 including the further steps of: a) forming one or more lower non-porous insulation layers on said integrated circuit structure prior to said step of forming said composite layer, to thereby prevent downward migration of impurities from said porous structure into said integrated circuit structure; and b) forming one or more upper non-porous insulation layers over said low dielectric constant insulation layer after said converting step to thereby prevent upward migration of impurities from said porous structure into said integrated circuit structure.
Claim 7
Dependent Claim
39 words
The process of claim 1 wherein said step of forming said composite layer on said semiconductor wafer by a chemical vapor deposition process further comprises depositing said composite layer while maintaining a plasma during said chemical vapor deposition process.
Claim 8
Dependent Claim
69 words
The process of claim 5 including the further steps of: a) forming one or more contact openings in said one or more lower non-porous insulation layers, said low dielectric constant insulation layer, and said one or more upper non-porous insulation layers; b) filling said contact openings with conductive material; and c) forming a patterned metal layer over an upper surface of said one or more upper non-porous insulation layers.
Claim 9
Dependent Claim
164 words
A process for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer which comprises: a) forming a composite layer comprising one or more materials which are convertible to a gas and one or more materials which either are themselves insulation materials or are convertible to insulation materials; and b) converting said composite layer to a porous low dielectric constant insulation layer, wherein: said step of forming said composite layer on said semiconductor wafer further comprises depositing said composite layer on said wafer by a chemical vapor deposition process; said step of forming said composite layer further comprises depositing on said semiconductor wafer a mixture comprising: a) polycrystalline silicon, comprising the material which is convertible to an insulation material; and b) germanium, comprising the material which is convertible to a gas; and said step of converting said composite layer comprises simultaneously oxidizing said polycrystalline silicon to form silicon dioxide and oxidizing said carbon to produce gaseous germanium nitride.
Claim 10
Dependent Claim
164 words
A process for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer which comprises: a) forming a composite layer comprising one or more materials which are convertible to a gas and one or more materials which either are themselves insulation materials or are convertible to insulation materials; and b) converting said composite layer to a porous low dielectric constant insulation layer, wherein: said step of forming said composite layer on said semiconductor wafer further comprises depositing said composite layer on said wafer by a chemical vapor deposition process; said step of forming said composite layer further comprises depositing on said semiconductor wafer a mixture comprising: a) polycrystalline silicon, comprising the material which is convertible to an insulation material; and b) germanium, comprising the material which is convertible to a gas; and said step of converting said composite layer comprises simultaneously oxidizing said polycrystalline silicon to form silicon dioxide and oxidizing said carbon to produce gaseous germanium nitride.
Claim 11
Dependent Claim
41 words
The process of claim 8 wherein one or more materials which either are themselves insulation materials or are convertible to insulation materials comprise about 10 wt % to about 90 wt % of said composite layer prior to said converting step.
Claim 12
Dependent Claim
26 words
The process of claim 8 wherein said step of forming said composite layer further comprises forming said composite layer with one or more optional dopants present.
Claim 13
Dependent Claim
23 words
The process of claim 8 including the further step of heating said composite layer to planarize said layer prior to said converting step.
Claim 14
Dependent Claim
86 words
The process of claim 8 including the further steps of: a) forming one or more lower non-porous insulation layers on said integrated circuit structure prior to said step of forming said composite layer, to thereby present downward migration of impurities from said porous structure into said integrated circuit structure; and b) forming one or more upper non-porous insulation layers over said low dielectric constant insulation layer after said converting step to thereby prevent upward migration of impurities from said porous structure into said integrated circuit structure.
Claim 15
Dependent Claim
38 words
The process of claim 8 wherein said step of forming said composite layer on said semiconductor wafer by a chemical deposition process further comprises depositing said composite layer while maintaining a plasma during said chemical vapor deposition process.
Claim 16
Dependent Claim
69 words
The process of claim 12 including the further steps of: a) forming one or more contact openings in said one or more lower non-porous insulation layers, said low dielectric constant insulation layer, and said one or more upper non-porous insulation layers; b) filling said contact openings with conductive material; and c) forming a patterned metal layer over an upper surface of said one or more upper non-porous insulation layers.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1999-02-26 | 1999-08-28 | 2000-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-26 | 2003-08-28 | 2004-02-27 | $3760.00 | Window Closed / Lapsed |
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