US4968384A
Expired / Lapsed
US
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Method of producing carbon-doped amorphous silicon thin film
Assignee: Fuji Electric Co Ltd
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Filing: 1989-09-14
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Granted: 1990-11-06
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Expires: 2009-09-14
Abstract
Abstract A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of growing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition, including generating a glow discharge in a gaseous mixture of a silane gas and a hydrocarbon gas, and exposing said carbon-doped amorphous silicon layer to a plasma in a gas containing hydrogen to achieve a resultant layer having a prescribed value of photoconductivity.
Inventors
- 👤 Akihiko Asano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10P14/24; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
77 words
A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of: depositing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition upon the substrate, including the substep of generating a glow discharge in a mixture of a silane gas and a hydrocarbon gas; and exposing said deposited layer to a plasma in a gas containing hydrogen for achieving a resultant layer having a thickness not greater than 0.8 nm.
Claim 2
Independent Claim
77 words
A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of: depositing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition upon the substrate, including the substep of generating a glow discharge in a mixture of a silane gas and a hydrocarbon gas; and exposing said deposited layer to a plasma in a gas containing hydrogen for achieving a resultant layer having a thickness not greater than 0.8 nm.
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein said substrate is a glass substrate included in an amorphous solar battery.
Claim 4
Dependent Claim
29 words
A method according to claim 1, further comprising alternately repeating each said step of depositing and exposing a predetermined number of times for achieving a layer of prescribed thickness.
Claim 5
Dependent Claim
21 words
A method according to claim 1, wherein said silane gas is mono silane gas and said gas-containing hydrogen is acetylene gas.
Claim 6
Dependent Claim
27 words
A method according to claim 1, wherein the step of exposing said deposited layer includes etching said carbon-doped amorphous silicon thin film for achieving said resultant layer.
References Cited (Backward Citations)
US4599135A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |