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US5494837A
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Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls
Assignee: Purdue Research Foundation
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Filing: 1994-09-27
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Granted: 1996-02-27
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Expires: 2014-09-27
Abstract
Abstract A method of forming a semiconductor-on-insulator (SOI) electronic device includes the steps of etching a semiconductor substrate to form a plurality of adjacent trenches therein and then forming electrically insulating layers on bottoms of the trenches. Epitaxial lateral overgrowth (ELO) is then performed to grow respective monocrystalline semiconducting regions in the trenches. These semiconducting regions are preferably grown from a sidewall of each trench onto a respective insulating layer and fill each trench. Monocrystalline active regions of the electronic device are then formed in the semiconducting regions and also in the substrate, adjacent the trench sidewalls. For example, a monocrystalline trench isolated extrinsic base region of a bipolar junction transistor (BJT) can be formed in a semiconducting region in a respective trench, and a corresponding intrinsic base region and an intrinsic collector region can be formed in the substrate, adjacent the semiconducting region. Alternatively, trench isolated source and drain regions of a field effect transistor (FET) can be formed in one or more adjacent semiconducting regions and the corresponding channel region of the FET can be formed therebetween.
Inventors
- 👤 Chitra K. Subramanian
- 👤 Gerold W. Neudeck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:17
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/201; H10D30/00; H10D30/60; H10D30/601; H10D30/608; H10D62/00; H10D62/10; H10D62/113; H10D62/115; H10D62/116; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
97 words
A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of: providing a semiconductor substrate; forming an insulated gate electrode on a face of the semiconductor substrate; and then etching the semiconductor substrate to define a trench, using the insulated gate electrode as a mask, said trench having a sidewall extending between a bottom thereof and the face; forming a trench insulating layer on the trench bottom; growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer; and forming an electronic device active region in the monocrystalline semiconducting region.
Claim 2
Independent Claim
97 words
A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of: providing a semiconductor substrate; forming an insulated gate electrode on a face of the semiconductor substrate; and then etching the semiconductor substrate to define a trench, using the insulated gate electrode as a mask, said trench having a sidewall extending between a bottom thereof and the face; forming a trench insulating layer on the trench bottom; growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer; and forming an electronic device active region in the monocrystalline semiconducting region.
Claim 3
Dependent Claim
45 words
The method of claim 1, wherein said insulated gate electrode forming step comprises the steps of: forming a first gate insulating layer on the face; forming a conductive layer on the first gate insulating layer; and etching the conductive layer to define a gate electrode.
Claim 4
Dependent Claim
63 words
The method of claim 1, wherein said insulated gate electrode forming step comprises the steps of: forming a first gate insulating layer on the face; forming a conductive layer on the first gate insulating layer; etching the conductive layer to define a gate electrode having first and second ends; forming electrically insulating spacers at the first and second ends of the gate electrode.
Claim 5
Dependent Claim
53 words
The method of claim 3, wherein said conductive layer forming step is followed by the step of forming a second gate insulating layer on the conductive layer; and wherein said growing step is followed by the step of planarizing the semiconducting region, while using the second gate insulating layer as a planarizing stop.
Claim 6
Dependent Claim
50 words
The method of claim 4, wherein said planarizing step is followed by the steps of: etching the semiconducting region; forming a sidewall spacer on the semiconducting region, adjacent the gate electrode; and implanting a dopant of second conductivity type in the semiconducting region, using the sidewall spacer as a mask.
Claim 7
Dependent Claim
175 words
The method of claim 1, wherein said semiconductor substrate is of first conductivity type; wherein said substrate etching step comprises the step of etching the semiconductor substrate at a face thereof to define a pair of adjacent trenches and a mesa therebetween having first and second sidewalls; wherein said trench insulating layer forming step comprises the steps of forming a first trench insulating layer on a bottom of one of the trenches, adjacent the first sidewall, and forming a second trench insulating layer on a bottom of another of the trenches, adjacent the second sidewall; wherein said growing step comprises the step of growing a first monocrystalline semiconducting region from the first sidewall onto the first trench insulating layer while simultaneously growing a second monocrystalline semiconducting region from the second sidewall onto the second trench insulating layer; and wherein said electronic device active region forming step comprise the steps of forming a first electronic device active region in the first semiconducting region and forming a second electronic device active region in the second semiconducting region.
Claim 8
Dependent Claim
40 words
The method of claim 6, wherein said electronic device active region forming step comprises the steps of forming monocrystalline channel, source and drain regions of a field-effect transistor in the mesa and in the first and second semiconducting regions, respectively.
Claim 9
Independent Claim
94 words
A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of: providing a semiconductor substrate of first conductivity type having a trench therein at a face, said trench having a sidewall extending between a bottom thereof and the face; forming a trench insulating layer on the trench bottom; growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer; simultaneously with said growing step, doping the semiconducting region with a dopant of second conductivity type; and forming an electronic device active region in the monocrystalline semiconducting region.
Claim 10
Independent Claim
94 words
A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of: providing a semiconductor substrate of first conductivity type having a trench therein at a face, said trench having a sidewall extending between a bottom thereof and the face; forming a trench insulating layer on the trench bottom; growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer; simultaneously with said growing step, doping the semiconducting region with a dopant of second conductivity type; and forming an electronic device active region in the monocrystalline semiconducting region.
Claim 11
Independent Claim
171 words
A method of forming a semiconductor electronic device in a semiconductor-on-insulator substrate, comprising the steps of: etching the substrate at a face thereof to define a first trench therein having a first bottom and a first sidewall; etching the substrate at the face to define a second trench therein having a second bottom and a second sidewall; forming a first trench insulating layer on the first bottom; forming a second trench insulating layer on the second bottom; forming a first monocrystalline semiconducting region from the first sidewall onto the first trench insulating layer; forming a second monocrystalline semiconducting region from the second sidewall onto the second trench insulating layer; forming a first active region of the electronic device in the first monocrystalline semiconducting region; and forming a second active region of the electronic device in the second monocrystalline semiconducting region, wherein the first trench and second trench define a monocrystalline mesa therebetween and further comprising the step of forming a third active region of the electronic device in the monocrystalline mesa.
Claim 12
Independent Claim
171 words
A method of forming a semiconductor electronic device in a semiconductor-on-insulator substrate, comprising the steps of: etching the substrate at a face thereof to define a first trench therein having a first bottom and a first sidewall; etching the substrate at the face to define a second trench therein having a second bottom and a second sidewall; forming a first trench insulating layer on the first bottom; forming a second trench insulating layer on the second bottom; forming a first monocrystalline semiconducting region from the first sidewall onto the first trench insulating layer; forming a second monocrystalline semiconducting region from the second sidewall onto the second trench insulating layer; forming a first active region of the electronic device in the first monocrystalline semiconducting region; and forming a second active region of the electronic device in the second monocrystalline semiconducting region, wherein the first trench and second trench define a monocrystalline mesa therebetween and further comprising the step of forming a third active region of the electronic device in the monocrystalline mesa.
Claim 13
Dependent Claim
44 words
The method of claim 9, wherein said first trench insulating layer forming step and said second trench insulating layer forming step are performed simultaneously; and wherein said first monocrystalline semiconducting region forming step and said second monocrystalline semiconducting region forming step are performed simultaneously.
Claim 14
Independent Claim
100 words
A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of: providing a semiconductor substrate having a trench therein, said trench having a sidewall; forming a trench insulating layer on a bottom of the trench; growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer, using epitaxial lateral overgrowth; forming an active region of the electronic device in the monocrystalline semiconducting region, wherein said semiconductor substrate is of first conductivity type and wherein said growing step includes the step of simultaneously doping the semiconducting region with a dopant of second conductivity type.
Claim 15
Independent Claim
100 words
A method of forming a semiconductor-on-insulator electronic device in a semiconductor substrate, comprising the steps of: providing a semiconductor substrate having a trench therein, said trench having a sidewall; forming a trench insulating layer on a bottom of the trench; growing a monocrystalline semiconducting region from the sidewall onto the trench insulating layer, using epitaxial lateral overgrowth; forming an active region of the electronic device in the monocrystalline semiconducting region, wherein said semiconductor substrate is of first conductivity type and wherein said growing step includes the step of simultaneously doping the semiconducting region with a dopant of second conductivity type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-02-26 | 1999-08-28 | 2000-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-26 | 2003-08-28 | 2004-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-26 | 2007-08-28 | 2008-02-27 | $7700.00 | Window Closed / Lapsed |