Backside illuminated MSM device method

Claim 1

The method of fabricating metal semiconductor metal photodetector devices comprising the steps of: forming on a sacrificial indium phosphide first substrate wafer member an epitaxial indium aluminum arsenide buffer and etch stop layer; growing on said indium aluminum arsenide layer an optical energy receptive epitaxial layer of indium gallium arsenide; depositing on said indium gallium arsenide layer a current blocking layer of indium aluminum arsenide; removing lateral area portions of said formed, grown, and deposited layers down to said first substrate wafer member to define in remaining portions thereof an array of upstanding epitaxial mesa layered areas; disposing a two-terminal array of interdigitated finger configured metallic electrode elements across an upper plateau surface of each said upstanding epitaxial mesa, each said two-terminal electrode array including a first terminal metal pad portion received on both a lateral side portion of its supporting mesa and on adjoining surface portions of said now exposed first substrate wafer member and a complementing second terminal metal pad portion received on an opposing mesa lateral side and adjoining first substrate wafer surface; attaching said array of upstanding mesas at said upper plateau surface portions thereof to an electrically insulating permanent second substrate member; deleting said sacrificial indium phosphide first substrate wafer member from said array of attached mesas to expose backside surface portions of said mesas; and dividing said array of mesa configured devices into groups of photodetectors.

Claim 2

The method of fabricating metal semiconductor metal photodetector devices comprising the steps of: forming on a sacrificial indium phosphide first substrate wafer member an epitaxial indium aluminum arsenide buffer and etch stop layer; growing on said indium aluminum arsenide layer an optical energy receptive epitaxial layer of indium gallium arsenide; depositing on said indium gallium arsenide layer a current blocking layer of indium aluminum arsenide; removing lateral area portions of said formed, grown, and deposited layers down to said first substrate wafer member to define in remaining portions thereof an array of upstanding epitaxial mesa layered areas; disposing a two-terminal array of interdigitated finger configured metallic electrode elements across an upper plateau surface of each said upstanding epitaxial mesa, each said two-terminal electrode array including a first terminal metal pad portion received on both a lateral side portion of its supporting mesa and on adjoining surface portions of said now exposed first substrate wafer member and a complementing second terminal metal pad portion received on an opposing mesa lateral side and adjoining first substrate wafer surface; attaching said array of upstanding mesas at said upper plateau surface portions thereof to an electrically insulating permanent second substrate member; deleting said sacrificial indium phosphide first substrate wafer member from said array of attached mesas to expose backside surface portions of said mesas; and dividing said array of mesa configured devices into groups of photodetectors.