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US5492851A
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Method for fabricating attached capacitor cells in a semiconductor device having a thin film transistor
Assignee: SK Hynix Inc
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Filing: 1995-03-20
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Granted: 1996-02-20
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Expires: 2015-03-20
Abstract
Abstract A method for fabricating a semiconductor device, capable of simplifying the fabrication, increasing the effective surface area of a charge storage electrode on a limited area, and thereby achieving the fabrication of a highly integrated semiconductor device. The method includes the steps of forming a bulk metal oxide silicon field effect transistor having a first element isolation layer, a first gate and first source and drain on a semiconductor substrate, sequentially forming an insulating layer, a planarizing layer, a capacitor and a first bit line electrode layer being in contact with the first source and drain over the bulk transistor, forming a planarizing layer over the entire exposed surface of the resulting structure and then a semiconductor layer for a substrate of a thin film transistor to be formed, forming a thin film metal oxide silicon field effect transistor having a second gate and second source and drain on the semiconductor layer, and forming a second bit line electrode layer on the resulting structure such that the second bit line electrode layer is in contact with the first bit line electrode layer as well as the second source and drain.
Inventors
- 👤 Eui K. Ryou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:03
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D88/00; H10B12/30; H10B12/31; H10B12/48; H10B12/482
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
168 words
A method for fabricating a semiconductor device, comprising the steps of: (a) forming a bulk metal oxide silicon field effect transistor having a first element isolation layer, a first gate electrode and a first source and drain on a semiconductor substrate; (b) sequentially forming an insulating layer, a planarizing layer, a capacitor and a first bit line electrode layer in contact with the first source and drain over the bulk transistor; (c) forming a planarizing layer on the resulting structure obtained at step (b) and then forming a semiconductor layer for a substrate of a thin film transistor; (d) forming a thin film metal oxide silicon field effect transistor having a second gate electrode and a second source and drain on the semiconductor layer; and (e) forming a second bit line electrode layer on the resulting structure obtained at step (d) such that the second bit line electrode layer is in direct contact with the first bit line electrode layer as well as the second source and drain.
Claim 2
Independent Claim
168 words
A method for fabricating a semiconductor device, comprising the steps of: (a) forming a bulk metal oxide silicon field effect transistor having a first element isolation layer, a first gate electrode and a first source and drain on a semiconductor substrate; (b) sequentially forming an insulating layer, a planarizing layer, a capacitor and a first bit line electrode layer in contact with the first source and drain over the bulk transistor; (c) forming a planarizing layer on the resulting structure obtained at step (b) and then forming a semiconductor layer for a substrate of a thin film transistor; (d) forming a thin film metal oxide silicon field effect transistor having a second gate electrode and a second source and drain on the semiconductor layer; and (e) forming a second bit line electrode layer on the resulting structure obtained at step (d) such that the second bit line electrode layer is in direct contact with the first bit line electrode layer as well as the second source and drain.
Claim 3
Dependent Claim
116 words
A method in accordance with claim 1, wherein the step (d) further comprises the steps of: sequentially depositing a gate insulating layer and a polysilicon film over the semiconductor layer, and then selectively etching the polysilicon film using a gate electrode/word line mask, thereby forming the second gate electrode and a word line pattern; and implanting impurity ions first in first exposed portions of the semiconductor layer, forming insulating layer spacers on side walls of the second gate electrode and word line pattern, respectively, and implanting impurity ions in a higher concentration in second exposed portions of the semiconductor layer, thereby forming a thin film metal oxide silicon field effect transistor having a lightly doped structure.
Claim 4
Dependent Claim
86 words
A method in accordance with claim 2, wherein the step (e) further comprises the steps of: depositing an insulating film on the resulting structure obtained at step (d); selectively etching a portion of the insulating film disposed over the source region of the thin film transistor using a storage electrode contact hole mask; depositing a second bit line electrode layer consisting of a conduction layer after selectively etching the insulating film such that the second bit line electrode layer is in contact with the source region.
Claim 5
Dependent Claim
38 words
A method in accordance with claim 3, wherein the second bit line electrode layer is formed using a selective growth process so that it is disposed only within a contact hole formed after selectively etching the insulating film.
Claim 6
Dependent Claim
39 words
A method in accordance with claim 4, wherein the second bit line electrode layer is formed in the form of spacers disposed in the contact hole such that it is in contact with the first bit line electrode layer.
References Cited (Backward Citations)
US5122476A
Cited
US5296402A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-19 | 1999-08-21 | 2000-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-19 | 2003-08-21 | 2004-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-19 | 2007-08-21 | 2008-02-20 | $7700.00 | Window Closed / Lapsed |