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US5490112A Expired / Lapsed US ⏱️ 0.0 years remaining

Multi-port memory device with multiple sets of columns

Assignee: Micron Technology Inc
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Filing: 1994-10-14
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Granted: 1996-02-06
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Expires: 2014-10-14
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Abstract

Abstract A multi-port memory device includes a row-column array, a random access port, a plurality of bidirectional serial access memory (SAM) ports, and a switching network for coupling SAM ports to sets of columns. A column is defined as a number of memory cells sharing a sense amplifier. Sets of columns are defined in one rectangular region or among several rectangular regions of the array. The switching network selectively couples each SAM port with each set, each set with each other set, and each SAM port with each other SAM port. A video random access memory (VRAM) or a multi-port dynamic random access memory (DRAM) of the present invention provides increased flexibility in smaller die area.

Inventors

  • 👤 Glen E. Hush
  • 👤 Stephen L. Casper

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 20:15
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/10; G11C7/1075

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 198 words
A multi-port memory comprising: a. a dynamic random access memory array, the array comprising a first, a second, and a third set of columns each column comprising a sense amplifier, the first set comprising a predetermined number of columns, the second and the third set comprising the predetermined number of columns; b. a random access circuit coupled to the array, the random access circuit comprising a column decoder for concurrently enabling a sense amplifier from each set; c. a first, a second, and a third serial access circuit coupled to the array, the first, the second, and the third serial access circuit respectively comprising a first, a second, and a third plurality of serial access memory cells and a first, a second, and a third pointer decoder for enabling serial access of a serial access memory cell of the respective plurality; and d. a switching circuit comprising a plurality of buses equal in number to the predetermined number, a plurality of first transfer gates for coupling the enabled sense amplifiers to a selected bus of the plurality of buses, and a plurality of second transfer gates for coupling the selected bus to the enabled serial access memory cells.
Claim 2
Dependent Claim 198 words
A multi-port memory comprising: a. a dynamic random access memory array, the array comprising a first, a second, and a third set of columns each column comprising a sense amplifier, the first set comprising a predetermined number of columns, the second and the third set comprising the predetermined number of columns; b. a random access circuit coupled to the array, the random access circuit comprising a column decoder for concurrently enabling a sense amplifier from each set; c. a first, a second, and a third serial access circuit coupled to the array, the first, the second, and the third serial access circuit respectively comprising a first, a second, and a third plurality of serial access memory cells and a first, a second, and a third pointer decoder for enabling serial access of a serial access memory cell of the respective plurality; and d. a switching circuit comprising a plurality of buses equal in number to the predetermined number, a plurality of first transfer gates for coupling the enabled sense amplifiers to a selected bus of the plurality of buses, and a plurality of second transfer gates for coupling the selected bus to the enabled serial access memory cells.
Claim 3
Dependent Claim 38 words
The multi-port memory of claim 1 wherein the column decoder is coupled by a column decode bus to each sense amplifier, the column decoder for enabling sensing by the first, the second, and the third enabled sense amplifier.
Claim 4
Dependent Claim 130 words
The integrated circuit of claim 1 wherein: a. the first, the second, and the third set of columns are disposed within a first region, the first region comprising a first, a second, and a third subregion, the first set being disposed within the first subregion, the second set being disposed within the second subregion, and the third set being disposed within the third subregion; b. the first, the second, and the third serial access memory circuits are disposed outside the first region; c. the column decoder is coupled to the first, the second, and the third enabled sense amplifiers by a column decode bus; and d. the column decode bus comprises a first, a second, and a third portion disposed respectively in the first, the second, and the third subregions.
Claim 5
Dependent Claim 41 words
The multi-port memory of claim 1 wherein the first, the second, and the third set of columns are disposed within a first region and the first, the second, and the third serial access memory circuits are disposed within a second region.
Claim 6
Dependent Claim 84 words
The multi-port memory of claim 4 wherein the switching circuit comprises: a. a first transfer gate of the plurality of first transfer gates disposed within the first region for coupling the enabled sense amplifier of the first set to the selected bus of the plurality of buses; and b. a second transfer gate of the plurality of second transfer gates disposed outside the first region for coupling the selected bus to the enabled serial access memory cell of the first serial access memory circuit.
Claim 7
Dependent Claim 47 words
The multi-port memory of claim 5 wherein the first region comprises a first, a second, and a third subregion, the first set being disposed within the first subregion, the second set being disposed within the second subregion, and the third set being disposed within the third subregion.
Claim 8
Dependent Claim 36 words
The multi-port memory of claim 6 wherein the selected bus comprises a first portion disposed in the first subregion, a second portion disposed in the second subregion, and a third portion disposed in the third subregion.
Claim 9
Dependent Claim 56 words
The multi-port memory of claim 6 wherein: a. each column further comprises a plurality of memory cells; and b. each plurality of memory cells is coupled to a row decoder disposed within each subregion, the row decoder for coupling for each column a memory cell selected from the plurality of memory cells to the sense amplifier.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-02-05 1999-08-07 2000-02-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-02-05 2003-08-07 2004-02-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-02-05 2007-08-07 2008-02-06 $7700.00 Window Closed / Lapsed

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