Mask, mask producing method and pattern forming method using mask

Claim 2

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; and a mask pattern layer on said first layer, said mask pattern layer including at least one phase shift region made up solely of a layer of phase shift material capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on a phase shift region, said phase shift region being positioned on said first layer such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on a phase shift region pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions such that the phase shift region does not interact with an opaque region to produce any part of the pattern formed on said wafer.

Claim 3

A mask as set forth in claim 1, wherein the phase of the phase shifted transmitted light is shifted within the range of from 150° to 210° relative to the phase of exposure light which does not impinge on said region.

Claim 4

A mask as set forth in claim 1, wherein said phase shift region has a straight edge disposed between said light portions for forming a line pattern.

Claim 5

A mask as set forth in claim 1, wherein said pattern includes one or more of said phase shift regions presenting a pair of straight edges disposed between said light portions for forming a pattern having an arbitrary width.

Claim 6

A mask as set forth in claim 4, wherein the pattern of a given phase shift region is smaller than a designed black pattern to be formed thereby.

Claim 7

A mask as set forth in claim 1, wherein said pattern comprises a plurality of mutually adjacent regions having mutually different phase shift qualities.

Claim 8

A mask as set forth in claim 1, wherein said first layer is made of quartz or glass.

Claim 9

A mask as set forth in claim 1, wherein said phase shift regions are made up of a material which comprises SiO 2 , Al 2 O 3 or MgF 2 .

Claim 10

A mask as set forth in claim 6, wherein one of said adjacent regions produces phase shifted light having a phase difference π relative to the unshifted exposure light which has not impinged on a phase shift region, and the other of said adjacent regions produces phase shifted light having a phase difference π/2 relative to the unshifted exposure light, the interaction and interference between the π/2 difference phase shifted light and the unshifted exposure light being sufficient to produce a gray pattern segment portion and the interaction and interference between the π difference phase shifted light and the unshifted light being sufficient to produce a black pattern segment portion.

Claim 11

A mask as set forth in claim 9, wherein said adjacent regions are arranged to produce a black line segment pattern portion.

Claim 12

A mask as set forth in claim 9, wherein said adjacent regions are arranged to produce a black dot pattern portion.

Claim 13

A mask as set forth in claim 9, wherein said adjacent regions are arranged to produce a black intersecting line pattern portion.

Claim 14

A mask as set forth in claim 9, wherein said adjacent regions are arranged to produce a black T-shaped pattern portion.

Claim 15

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light, said first layer including at least one phase shift region capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on a phase shift region, said phase shift region having a different thickness than other portions of the first layer and being positioned such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on a phase shift region pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions such that the phase shift region does not interact with an opaque region to produce any part of the pattern formed on said wafer.

Claim 16

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light, said first layer including at least one phase shift region capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on a phase shift region, said phase shift region having a different thickness than other portions of the first layer and being positioned such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on a phase shift region pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions such that the phase shift region does not interact with an opaque region to produce any part of the pattern formed on said wafer.

Claim 17

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; and a mask pattern layer on said first layer, said mask pattern layer including at least first and second phase shift regions made up solely of a layer of phase shift material capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on a phase shift region, the first phase shift region having a different thickness than the second phase shift region, said phase shift regions being positioned on said first layer such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on a phase shift region pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shade to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions such that the phase shift regions do not interact with an opaque region to produce any part of the pattern formed on said wafer.

Claim 18

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; and a mask pattern layer on said first layer, said mask pattern layer including at least first and second phase shift regions made up solely of a layer of phase shift material capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on a phase shift region, the first phase shift region having a different thickness than the second phase shift region, said phase shift regions being positioned on said first layer such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on a phase shift region pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shade to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions such that the phase shift regions do not interact with an opaque region to produce any part of the pattern formed on said wafer.

Claim 19

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; a mask pattern layer on said first layer, said mask pattern layer including at least one phase shift region consisting solely of a single layer of phase shift material, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material, the phase shift material being capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift material, said phase shift region being positioned on said first layer such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on the phase shift material pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions; and an opaque mask layer covering portions of said first layer, the opaque mask layer functioning in blocking light, but not shifting be phase of the light.

Claim 20

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; a mask pattern layer on said first layer, said mask pattern layer including at least one phase shift region consisting solely of a single layer of phase shift material, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material, the phase shift material being capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift material, said phase shift region being positioned on said first layer such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted light and at least a portion of exposure light which has not impinged on the phase shift material pass through the mask in close proximity to one another, whereby, after passing through the mask, said portions interact and interfere with one another to thereby produce at least one pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on said wafer, the arrangement of the elements of said mask being such that said pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions; and an opaque mask layer covering portions of said first layer, the opaque mask layer functioning in blocking light, but not shifting be phase of the light.

Claim 21

A mask as set forth in claim 16, wherein the first layer and the phase shift material are made of the same material.

Claim 22

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including a phase shift layer disposed on said first layer and on said opaque layer in covering relationship to said edge portion, said phase shift layer being disposed on said opaque layer only in areas adjacent to said edge portion and being formed from a material that is capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

Claim 23

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including a phase shift layer disposed on said first layer and on said opaque layer in covering relationship to said edge portion, said phase shift layer being disposed on said opaque layer only in areas adjacent to said edge portion and being formed from a material that is capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

Claim 24

A mask as set forth in claim 18, wherein said first layer is made of quartz or glass.

Claim 25

A mask as set forth in claim 18, wherein said phase shift layer is made of a material which comprises SiO 2 , Al 2 O 3 or MgF 2 .

Claim 26

A mask as set forth in claim 18, wherein said opaque layer is made of a material comprising chromium.

Claim 27

A mask as set forth in claim 18, wherein is included a second opaque mask layer covering portions of the first layer.

Claim 28

A mask as set forth in claim 18, wherein is included a second phase shift pattern on portions of said first layer.

Claim 29

A mask as set forth in claim 18, and a stopper layer disposed on the opaque layer and the first layer beneath said phase shift layer.

Claim 30

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift layer including first and second phase shift portions on said first layer adjacent said edge portion, said phase shift portions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift portions, said first and second phase shift portions having mutually different thicknesses, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region end not covered by phase shift material.

Claim 31

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift layer including first and second phase shift portions on said first layer adjacent said edge portion, said phase shift portions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift portions, said first and second phase shift portions having mutually different thicknesses, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region end not covered by phase shift material.

Claim 32

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including mutually adjacent phase shift regions on said first layer adjacent said edge portion, said phase shift regions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region, said mutually adjacent phase shift regions having mutually different phase shift qualities, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

Claim 33

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including mutually adjacent phase shift regions on said first layer adjacent said edge portion, said phase shift regions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region, said mutually adjacent phase shift regions having mutually different phase shift qualities, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer, the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

Claim 34

A mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including a phase shift region on said first layer adjacent said edge portion, said phase shift region being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region and including first and second portions which have mutually different thicknesses, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region not covered by phase shift material.

Claim 35

A mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having an edge portion, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including a phase shift region on said first layer adjacent said edge portion, said phase shift region being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift region and including first and second portions which have mutually different thicknesses, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region not covered by phase shift material.

Claim 36

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light, said first layer having first and second areas; a mask pattern layer on the first area of the first layer, said mask pattern layer including at least one phase shift region consisting solely of a first phase shift layer of a phase shift material, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material, the phase shift material being capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift material, said phase shift region being positioned on said first area such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted fight and at least a portion of exposure light which has not impinged on the phase shift material pass through the mask in close proximity to one another, whereby, after passing through the mask said portions interact and interfere with one another to thereby produce a first pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on the wafer, the arrangement of elements of the mask being such that said first pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions; an opaque layer having an edge portion covering a portion of the second area of said first layer, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including a second phase shift layer of said phase shift material, said second phase shift layer being disposed on said second area of the first layer and on said opaque layer in covering relationship to said edge portion, said second phase shift layer being disposed on said opaque layer only in areas adjacent to said edge portion, whereby a zone of the pattern on said wafer having a width less than or equal to a predetermined width may be formed by impinging light on said first area of the first layer and a zone of the wafer pattern having a greater width than said predetermined width may be formed by impinging light on said second area.

Claim 37

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light, said first layer having first and second areas; a mask pattern layer on the first area of the first layer, said mask pattern layer including at least one phase shift region consisting solely of a first phase shift layer of a phase shift material, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material, the phase shift material being capable of transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift material, said phase shift region being positioned on said first area such that when exposure light impinges on the mask, at least a portion of phase shifted transmitted fight and at least a portion of exposure light which has not impinged on the phase shift material pass through the mask in close proximity to one another, whereby, after passing through the mask said portions interact and interfere with one another to thereby produce a first pattern segment having reduced light intensity which corresponds in shape to at least a part of the pattern formed on the wafer, the arrangement of elements of the mask being such that said first pattern segment of reduced light intensity is produced solely by the interaction and interference between said light portions; an opaque layer having an edge portion covering a portion of the second area of said first layer, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including a second phase shift layer of said phase shift material, said second phase shift layer being disposed on said second area of the first layer and on said opaque layer in covering relationship to said edge portion, said second phase shift layer being disposed on said opaque layer only in areas adjacent to said edge portion, whereby a zone of the pattern on said wafer having a width less than or equal to a predetermined width may be formed by impinging light on said first area of the first layer and a zone of the wafer pattern having a greater width than said predetermined width may be formed by impinging light on said second area.

Claim 38

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having edge portions, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including phase shift regions on said first layer, each phase shift region being adjacent a respective one of said edge portions, said phase shift regions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift regions and thereby forming a pattern having an arbitrary width, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

Claim 39

A mask for forming a pattern on a wafer, said mask comprising: a first layer which is transparent with respect to an exposure light; an opaque layer covering a portion of said first layer and having edge portions, the opaque layer functioning in blocking light, but not shifting the phase of the light; and a phase shift pattern including phase shift regions on said first layer, each phase shift region being adjacent a respective one of said edge portions, said phase shift regions being adapted for transmitting exposure light impinging thereon and shifting the phase of the transmitted light relative to exposure light which does not impinge on the phase shift regions and thereby forming a pattern having an arbitrary width, the mask including at least one phase shift region consisting solely of a single layer of phase shift material formed on the first layer the phase shift material being capable of transmitting exposure light impinging thereon, said at least one phase shift region being abutted on opposing sides by first layer portions not covered by an opaque region and not covered by phase shift material.

Claim 40

A mask as set forth in claim 29, wherein a boundary between said phase shift regions and a portion of said first layer having no phase shift region thereon is located on an inner side of a black pattern to be formed thereby.