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US5489367A
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Target for reactive sputtering and film-forming method using the target
Assignee: Proterial Ltd
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Filing: 1994-08-19
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Granted: 1996-02-06
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Expires: 2014-08-19
Abstract
Abstract A target for use in reactive sputtering for forming a film by a reaction with nitrogen, which is a target being composed substantially of titanium and nitrogen and having a nitrogen/titanium atomic ratio, N/Ti, of 0.20 to 0.95, and is used for forming a film whose nitrogen ratio is greater than a ratio of nitrogen to titanium in the target by a reaction with a sputtering gas containing nitrogen, and a method for forming a film, which uses the target.
Inventors
- 👤 Kunichika Kubota
- 👤 Akitoshi Hiraki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:03
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/58007; C04B35/58014; C04B35/622; C04B35/64; C04B35/645; C23C14/06; C23C14/0641; C23C14/3407; C23C14/3414
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
63 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein said target has a nitrogen/titanium atomic ratio, N/Ti, of 0.20 to 0.90.
Claim 2
Independent Claim
63 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein said target has a nitrogen/titanium atomic ratio, N/Ti, of 0.20 to 0.90.
Claim 3
Independent Claim
69 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein said target has a nitrogen titanium atomic ratio, N/Ti, of 0.20 to 0.90 and a NaCl crystal structure.
Claim 4
Independent Claim
69 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein said target has a nitrogen titanium atomic ratio, N/Ti, of 0.20 to 0.90 and a NaCl crystal structure.
Claim 5
Independent Claim
63 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein the target has a nitrogen/titanium atomic ratio, N/Ti, of 0.50 to 0.90.
Claim 6
Independent Claim
63 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein the target has a nitrogen/titanium atomic ratio, N/Ti, of 0.50 to 0.90.
Claim 7
Independent Claim
63 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein the target has a Ti 2 N phase as a main phase.
Claim 8
Independent Claim
63 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein the target has a Ti 2 N phase as a main phase.
Claim 9
Independent Claim
79 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film wherein the target has a Ti 2 N phase as a main phase and contains at least one of phase having a NaCl crystal structure and an αTi phase.
Claim 10
Independent Claim
79 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film wherein the target has a Ti 2 N phase as a main phase and contains at least one of phase having a NaCl crystal structure and an αTi phase.
Claim 11
Independent Claim
72 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein said target has a nitrogen/titanium ratio, N/Ti, of 0.35 to 0.55 and a Ti 2 N phase as a main phase.
Claim 12
Independent Claim
72 words
A method for forming a substantially stoichiometric titanium nitride film having a specific resistance of not more than 100 μΩcm, which method comprises the step of sputtering a target comprising titanium and nitrogen in the presence of a sputtering gas containing nitrogen to form the substantially stoichiometric titanium nitride film, wherein said target has a nitrogen/titanium ratio, N/Ti, of 0.35 to 0.55 and a Ti 2 N phase as a main phase.
References Cited (Backward Citations)
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