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Patent US5488601A successfully refreshed from Google Patents.
US5488601A
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Photoelectric sensor, information recording system, and information recording method
Assignee: Dai Nippon Printing Co Ltd
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Filing: 1993-10-26
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Granted: 1996-01-30
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Expires: 2013-10-26
Abstract
Abstract An information recording system including a photoelectric sensor being semiconductive and having a photoconductive layer stacked on an electrode, and an information recording medium having an information recording layer stacked on an electrode so that information can be recorded on the information recording layer by an electric field or electric charge. The photoelectric sensor and the information recording medium are disposed to face each other, and information exposure is carried out with a voltage being applied between the two electrodes, thereby enabling information to be recorded on the information recording medium. The photoconductive layer of the photoelectric sensor is capable of amplifying an electric field or electric charge given to the information recording medium, so that the intensity of electric field or the amount of electric charge given to the information recording medium can be increased to a level higher than the light energy actually applied. Accordingly, information recording of high sensitivity can be performed even if information exposure is carried out with a relatively small light energy.
Inventors
- 👤 Shinichi Sakano
- 👤 Daigo Aoki
- 👤 Minoru Utsumi
- 👤 Masanori Akada
- 👤 Osamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 15:49
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/005; G11C13/00; G11C13/04; H; H04; H04N; H04N5/00; H04N5/30
Claims Analysis
Total Claims: 115
Claim 1
Independent Claim
126 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode, said photoelectric sensor being semiconductive, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases after the termination of the light exposure during continuous voltage application.
Claim 2
Dependent Claim
126 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode, said photoelectric sensor being semiconductive, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases after the termination of the light exposure during continuous voltage application.
Claim 3
Dependent Claim
159 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium, said photoelectric sensor being semiconductive, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and an electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 4
Dependent Claim
159 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium, said photoelectric sensor being semiconductive, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and an electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 5
Dependent Claim
27 words
A photoelectric sensor according to claim 1 or 2, wherein said photoconductive layer is a double-layered structure comprising a charge generation layer and a charge transport layer.
Claim 6
Dependent Claim
23 words
A photoelectric sensor according to claim 3, wherein said charge generation layer is comprised of a charge generating substance and a resin binder.
Claim 7
Dependent Claim
49 words
A photoelectric sensor according to claim 4, wherein the resin binder in said charge generation layer is selected from the group consisting of a polyester resin, a vinyl chloride-vinyl acetate copolymer resin, a vinyl acetate resin, a polyvinyl butyral resin, a polyvinyl acetal resin, and a polyvinyl formal resin.
Claim 8
Dependent Claim
20 words
A photoelectric sensor according to claim 3, wherein said charge generating substance is a bis-azo pigment of the formula: ##STR22##
Claim 9
Dependent Claim
16 words
A photoelectric sensor according to claim 3, wherein said charge generating substance is a fluorenone-azo pigment.
Claim 10
Dependent Claim
23 words
A photoelectric sensor according to claim 3, wherein said charge transport layer is comprised of a charge transport substance and a resin binder.
Claim 11
Dependent Claim
15 words
A photoelectric sensor according to claim 8, wherein said charge transport substance is para-dimethyl stilbene.
Claim 12
Dependent Claim
21 words
A photoelectric sensor according to claim 8, wherein said charge transport substance is a butadiene derivative having the following structure: ##STR23##
Claim 13
Dependent Claim
44 words
A photoelectric sensor according to claim 8, wherein the resin binder in said charge transport layer is selected from the group consisting of a polystyrene resin, a styrene derivative resin, a styrene-butadiene copolymer resin, a polycarbonate resin, a polyarylate resin, and a phenoxy resin.
Claim 14
Dependent Claim
26 words
A photoelectric sensor according to claim 1 or 2, wherein said electrodes have a conductivity of not higher than 10 6 ohm-cm in terms of resistivity.
Claim 15
Dependent Claim
26 words
A photoelectric sensor according to claim 1 or 2, which is obtained by aging it in dark at a relative humidity of not higher than 60%.
Claim 16
Dependent Claim
32 words
A photoelectric sensor according to claim 1 or 2, wherein the absolute value of acceptance potential of said photoelectric sensor when charged positively by DC corona charging is less than 200 V.
Claim 17
Dependent Claim
30 words
A photoelectric sensor according to claim 1 or 2, wherein when a thermally stimulated current is measured, clear peak is observed in the range of 40° C. to 150° C.
Claim 18
Dependent Claim
91 words
An information recording system for recording light information on an information recording medium by information exposure, said system comprising a photoelectric sensor as defined in claim 1 or 2, and the information recording medium having an information recording layer formed on an electrode, said photoelectric sensor and said information recording medium being disposed on an optical axis to face each other across a gap and connected to each other so that a voltage can be applied between the electrode of said photoelectric sensor and the electrode of said information recording medium.
Claim 19
Dependent Claim
59 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 16; carrying out information exposure after initiation of application of a voltage between said two electrodes; and terminating the voltage application at the same time as the information exposure terminates.
Claim 20
Dependent Claim
73 words
An information recording method according to claim 17, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 21
Dependent Claim
58 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 16; applying a voltage between said two electrodes and, at the same time, carrying out information exposure; and continuing the voltage application even after the information exposure has terminated.
Claim 22
Dependent Claim
73 words
An information recording method according to claim 19, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 23
Dependent Claim
60 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 16; applying a voltage between said two electrodes and, at the same time, carrying out information exposure; and terminating the voltage application at the same time as the information exposure terminates.
Claim 24
Dependent Claim
73 words
An information recording method according to claim 21, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 25
Dependent Claim
22 words
An information recording system according to claim 16, wherein said information recording layer comprises a liquid crystal phase and a resin phase.
Claim 26
Dependent Claim
25 words
An information recording system according to claim 23, wherein said liquid crystal is a mixture of a smectic liquid crystal and a nematic liquid crystal.
Claim 27
Dependent Claim
47 words
An information recording system according to claim 23, wherein the resin phase present in said information recording layer is formed of an ultraviolet curing resin, and the surface layer of said information recording layer is formed from a skin layer consisting of only the ultraviolet curing resin.
Claim 28
Dependent Claim
27 words
An information recording system according to claim 16, wherein said information recording layer is comprised of an ultraviolet curing resin, a liquid crystal, and a surface-active agent.
Claim 29
Dependent Claim
59 words
An information recording system according to claim 16, wherein said information recording layer is an electric charge retaining layer, so that an electric charge corresponding to information exposure is given to and formed on a surface of said information recording layer, or the electric charge formed on the surface of said information recording layer is developed with a toner.
Claim 30
Dependent Claim
53 words
An information recording system according to claim 16, wherein said information recording layer is comprised of a thermoplastic resin and heated after electric charge corresponding to information exposure has been given to a surface thereof, thereby forming a frost image corresponding to the information exposure on the surface of said information recording layer.
Claim 31
Dependent Claim
26 words
An information recording system according to claim 28, wherein said information recording layer is comprised of a mixture of a β-pinene polymer and an α-methylstyrene polymer.
Claim 32
Dependent Claim
16 words
An information recording system according to claim 16, wherein said information recording layer has memory properties.
Claim 33
Dependent Claim
24 words
An information recording system according to claim 16, wherein the resistivity of said information recording medium is 10 10 ohm-cm to 10 13 ohm-cm.
Claim 34
Dependent Claim
44 words
An information recording system according to claim 16, wherein said photoelectric sensor and said information recording medium are stacked to face each other across an air layer formed by a spacer of an insulating film having a thickness of 3 μm to 30 μm.
Claim 35
Dependent Claim
57 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 16; carrying out information exposure after initiation of application of a voltage between said two electrodes; and continuing the voltage application even after the information exposure has terminated.
Claim 36
Dependent Claim
73 words
An information recording method according to claim 33, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 37
Dependent Claim
72 words
An information recording system comprising a photoconductive layer, a dielectric layer, an information recording layer, and an upper electrode, which are successively stacked on a lower electrode in the mentioned order, wherein a photoelectric sensor part comprising said lower electrode and said photoconductive layer comprises a photoelectric sensor as defined in claim 1 or 2, and said lower and upper electrodes are connected together so that a voltage can be applied therebetween.
Claim 38
Dependent Claim
16 words
An information recording system according to claim 35, wherein said dielectric layer is comprised of poly-para-xylylene.
Claim 39
Dependent Claim
58 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 35; applying a voltage between said two electrodes and, at the same time, carrying out information exposure; and continuing the voltage application even after the information exposure has terminated.
Claim 40
Dependent Claim
73 words
An information recording method according to claim 37, wherein the voltage applied between the respective electrode of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carded out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 41
Dependent Claim
59 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 35; carrying out information exposure after initiation of application of a voltage between said two electrodes; and terminating the voltage application at the same time as the information exposure terminates.
Claim 42
Dependent Claim
73 words
An information recording method according to claim 39, wherein the voltage applied between the respective electrode of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carded out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 43
Dependent Claim
57 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 35; carrying out information exposure after initiation of application of a voltage between said two electrodes; and continuing the voltage application even after the information exposure has terminated.
Claim 44
Dependent Claim
73 words
An information recording method according to claim 41, wherein the voltage applied between the respective electrode of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carded out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 45
Dependent Claim
60 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 35; applying a voltage between said two electrodes and, at the same time, carrying out information exposure; and terminating the voltage application at the same time as the information exposure terminates.
Claim 46
Dependent Claim
73 words
An information recording method according to claim 43, wherein the voltage applied between the respective electrode of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 47
Dependent Claim
125 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 1 or 2, and the information recording medium having an information recording layer formed on an electrode, at least one of the electrodes of said photoelectric sensor and said information recording medium being transparent; disposing said photoelectric sensor and said information recording medium on an optical axis to face each other across a gap; carrying out light information exposure while applying a voltage between said two electrodes, thereby recording light information on said information recording medium; and reproducing the light information recorded on said information recording medium as visible information by transmitted or reflected light.
Claim 48
Dependent Claim
75 words
An information recording and reproducing method according to claim 45, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 49
Dependent Claim
34 words
An information recording and reproducing method according to claim 45, wherein the recorded light information is read with a scanner having a CCD sensor and output as an image by a sublimation transfer printer.
Claim 50
Dependent Claim
29 words
An information recording and reproducing method according to claim 45, wherein said information recording layer of said information recording medium comprises a liquid crystal phase and a resin phase.
Claim 51
Dependent Claim
34 words
An information recording and reproducing method according to claim 48, wherein said information recording layer of said information recording medium is comprised of an ultraviolet curing resin, a liquid crystal, and a surface-active agent.
Claim 52
Dependent Claim
27 words
An information recording and reproducing method according to claim 48, wherein said liquid crystal is a mixture of a smectic liquid crystal and a nematic liquid crystal.
Claim 53
Dependent Claim
51 words
An information recording and reproducing method according to any one of claims 32-48, wherein the resin phase constituting said information recording layer is formed of an ultraviolet curing resin, and a surface layer of said information recording layer is formed from a skin layer consisting of only the ultraviolet curing resin.
Claim 54
Dependent Claim
113 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 1 or 2, and the information recording medium having an information recording layer of a thermoplastic resin formed on an electrode; carrying out light information exposure; heating said information recording layer after electric charge has been given to a surface thereof by the light information exposure, thereby forming a frost image corresponding to the information exposure on the surface of said information recording layer; and reproducing the light information recorded on said information recording medium as visible information by transmitted or reflected light.
Claim 55
Dependent Claim
28 words
An information recording and reproducing method according to claim 52, wherein said information recording layer is comprised of a mixture of a β-pinene polymer and an α-methylstyrene polymer.
Claim 56
Dependent Claim
34 words
An information recording and reproducing method according to claim 52 wherein the recorded light information is read with a scanner having a CCD sensor and output as an image by a sublimation transfer printer.
Claim 57
Dependent Claim
89 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 1 or 2, and the information recording medium having as an information recording layer an electric charge retaining layer formed on an electrode; carrying out light information exposure to give electric charge to said information recording layer, thereby recording light information on said information recording medium; and reading and reproducing the recorded light information with an electric potential sensor.
Claim 58
Dependent Claim
98 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 1 or 2, and the information recording medium having as an information recording layer an electric charge retaining layer formed on an electrode; carrying out light information exposure to give electric charge to said information recording layer, thereby recording light information on said information recording medium; developing the recorded light information with a toner; and reproducing the recorded light information as visible information by transmitted or reflected light.
Claim 59
Dependent Claim
133 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using the information recording medium comprising a photoconductive layer, a dielectric layer, an information recording layer, and an upper electrode, which are successively stacked on a lower electrode in the mentioned order, in which a photoelectric sensor part comprising said lower electrode and said photoconductive layer comprises a photoelectric sensor as defined in claim 1 or 2, at least one of said upper and lower electrodes being transparent; carrying out light information exposure while applying a voltage between said upper and lower electrodes, thereby recording light information on said information recording medium; and reproducing the light information recorded on said information recording medium as visible information by transmitted or reflected light.
Claim 60
Dependent Claim
18 words
An information recording and reproducing method according to claim 57, wherein said dielectric layer is comprised of poly-para-xylylene.
Claim 61
Dependent Claim
34 words
An information recording and reproducing method according to claim 57 wherein the recorded light information is read with a scanner having a CCD sensor and output as an image by a sublimation transfer printer.
Claim 62
Dependent Claim
75 words
An information recording and reproducing method according to claim 57 wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 63
Dependent Claim
20 words
A photoelectric sensor according to claim 1 or 2 wherein said photoconductive layer is comprised of an organic conductive substance.
Claim 64
Dependent Claim
131 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium, wherein when said photoelectric sensor is exposed to light during application of a voltage between the electrode of said photoelectric sensor and an electrode of said information recording medium, and after carrier trap sites are formed in said photoconductive layer by exposure to light entirely and equally before the information light exposure, the amount of photo-induced current increases during the information light exposure with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein said increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 65
Dependent Claim
131 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium, wherein when said photoelectric sensor is exposed to light during application of a voltage between the electrode of said photoelectric sensor and an electrode of said information recording medium, and after carrier trap sites are formed in said photoconductive layer by exposure to light entirely and equally before the information light exposure, the amount of photo-induced current increases during the information light exposure with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein said increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 66
Dependent Claim
24 words
A photoelectric sensor according to claim 62, wherein said electrodes have a conductivity of not higher than 10 6 ohm-cm in terms of resistivity.
Claim 67
Dependent Claim
17 words
A photoelectric sensor according to claim 62, wherein said photoconductive layer comprises poly-N-vinylcarbazole and a dye admixture.
Claim 68
Dependent Claim
17 words
A photoelectric sensor according to claim 64, wherein said dye admixture in said photoconductive layer is: ##STR24##
Claim 69
Dependent Claim
67 words
A photoelectric sensor according to claim 62, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during the voltage application after uniform exposure has been carried out over the whole surface of said photoelectric sensor, the passing current density at an unexposed portion is 10 -4 A/cm 2 to 10 -7 A/cm 2 .
Claim 70
Dependent Claim
42 words
A photoelectric sensor according to claim 62, wherein the absolute value of acceptance potential of said photoelectric sensor when charged positively by DC corona charging after uniform exposure has been carried out over the whole surface thereof is less than 200 V.
Claim 71
Dependent Claim
43 words
A photoelectric sensor according to claim 62, wherein when a thermally stimulated current is measured after uniform exposure has been carried out over the whole surface of said photoelectric sensor, clear peak is observed in the range of 40° C. to 150° C.
Claim 72
Dependent Claim
31 words
A photoelectric sensor according to claim 62, wherein the uniform exposure is carried out under conditions of a relative humidity of not higher than 60% and an illuminance of 200 lux.
Claim 73
Dependent Claim
102 words
An information recording system for recording light information on an information recording medium by information exposure, said system comprising a photoelectric sensor as defined in claim 62, which has already been subjected to uniform exposure over the whole surface thereof, and the information recording medium having an information recording layer formed on an electrode, said photoelectric sensor and said information recording medium being disposed on an optical axis to face each other across a gap and connected to each other so that a voltage can be applied between the electrode of said photoelectric sensor and the electrode of said information recording medium.
Claim 74
Dependent Claim
27 words
An information recording system according to claim 70, wherein said information recording layer of said information recording medium comprises a liquid crystal phase and a resin phase.
Claim 75
Dependent Claim
32 words
An information recording system according to claim 71, wherein said information recording layer of said information recording medium is comprised of an ultraviolet curing resin, a liquid crystal, and a surface-active agent.
Claim 76
Dependent Claim
25 words
An information recording system according to claim 71, wherein said liquid crystal is a mixture of a smectic liquid crystal and a nematic liquid crystal.
Claim 77
Dependent Claim
46 words
An information recording system according to claim 70, wherein the resin phase constituting said information recording layer is formed of an ultraviolet curing resin, and a surface layer of said information recording layer is formed from a skin layer consisting of only the ultraviolet curing resin.
Claim 78
Dependent Claim
65 words
An information recording system according to claim 70, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor, the passing current density at an unexposed portion is 10 -4 A/cm 2 to 10 -7 A/cm 2 , and the resistivity of said information recording medium is 10 10 ohm-cm to 10 13 ohm-cm.
Claim 79
Dependent Claim
53 words
An information recording system according to claim 70, wherein said information recording layer is comprised of a thermoplastic resin and heated after electric charge corresponding to information exposure has been given to a surface thereof, thereby forming a frost image corresponding to the information exposure on the surface of said information recording layer.
Claim 80
Dependent Claim
25 words
An information recording system according to claim 76, wherein said information recording layer is comprised a mixture of a β-pinene polymer and an α-methylstyrene polymer.
Claim 81
Dependent Claim
58 words
An information recording system according to claim 70, wherein said information recording layer is an electric charge retaining layer, so that electric charge corresponding to information exposure is given to and formed on a surface of said information recording layer, or the electric charge formed on the surface of said information recording layer is developed with a toner.
Claim 82
Dependent Claim
16 words
An information recording system according to claim 70, wherein said information recording layer has memory properties.
Claim 83
Dependent Claim
44 words
An information recording system according to claim 70, wherein said photoelectric sensor and said information recording medium are stacked to face each other across an air layer formed by a spacer of an insulating film having a thickness of 3 μm to 30 μm.
Claim 84
Dependent Claim
70 words
An information recording system having a photoconductive layer, a dielectric layer, an information recording layer, and an upper electrode, which are successively stacked on a lower electrode in the mentioned order, wherein a photoelectric sensor part comprising said lower electrode and said photoconductive layer comprises a photoelectric sensor as defined in claim 62, and said lower and upper electrodes are connected together so that a voltage can be applied therebetween.
Claim 85
Dependent Claim
16 words
An information recording system according to claim 81, wherein said dielectric layer is comprised of poly-para-xylylene.
Claim 86
Dependent Claim
77 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 70 or 81; applying, after uniform exposure has been carried out over the whole surface of said photoelectric sensor, a voltage between said two electrodes and, at the same time, carrying out information exposure; and terminating the voltage application at the same time as the information exposure terminates.
Claim 87
Dependent Claim
73 words
An information recording method according to claim 83, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 88
Dependent Claim
75 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 70 or 81; applying, after uniform exposure has been carried out over the whole surface of said photoelectric sensor, a voltage between said two electrodes and, at the same time, carrying out information exposure; and continuing the voltage application even after the information exposure has terminated.
Claim 89
Dependent Claim
73 words
An information recording method according to claim 85, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 90
Dependent Claim
76 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 70 or 81; carrying out, after uniform exposure has been carried out over the whole surface of said photoelectric sensor, information exposure after initiation of application of a voltage between said two electrodes; and terminating the voltage application at the same time as the information exposure terminates.
Claim 91
Dependent Claim
73 words
An information recording method according to claim 87, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 92
Dependent Claim
74 words
An information recording method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using an information recording system as defined in claim 70 or 81; carrying out, after uniform exposure has been carried out over the whole surface of said photoelectric sensor, information exposure after initiation of application of a voltage between said two electrodes; and continuing the voltage application even after the information exposure has terminated.
Claim 93
Dependent Claim
73 words
An information recording method according to claim 89, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 94
Dependent Claim
138 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 62, and the information recording medium having an information recording layer formed on an electrode, at least one of the electrodes of said photoelectric sensor and said information recording medium being transparent; disposing said photoelectric sensor and said information recording medium on an optical axis to face each other across a gap after uniform exposure has been carried out over the whole surface of said photoelectric sensor; carrying out light information exposure while applying a voltage between said two electrodes, thereby recording light information on said information recording medium; and reproducing the light information recorded on said information recording medium as visible information by transmitted or reflected light.
Claim 95
Dependent Claim
29 words
An information recording and reproducing method according to claim 91, wherein said information recording layer of said information recording medium comprises a liquid crystal phase and a resin phase.
Claim 96
Dependent Claim
34 words
An information recording and reproducing method according to claim 92, wherein said information recording layer of said information recording medium is comprised of an ultraviolet curing resin, a liquid crystal, and a surface-active agent.
Claim 97
Dependent Claim
27 words
An information recording and reproducing method according to claim 92, wherein said liquid crystal is a mixture of a smectic liquid crystal and a nematic liquid crystal.
Claim 98
Dependent Claim
48 words
An information recording and reproducing method according to claim 92, wherein the resin phase constituting said information recording layer is formed of an ultraviolet curing resin, and a surface layer of said information recording layer is formed from a skin layer consisting of only the ultraviolet curing resin.
Claim 99
Dependent Claim
127 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 62, and the information recording medium having an information recording layer of a thermoplastic resin formed on an electrode; carrying out light information exposure after uniform exposure has been carried out over the whole surface of said photoelectric sensor; heating said information recording layer after an electric charge has been given to a surface thereof by the light information exposure, thereby forming a frost image corresponding to the information exposure on the surface of said information recording layer; and reproducing the light information recorded on said information recording medium as visible information by transmitted or reflected light.
Claim 100
Dependent Claim
28 words
An information recording and reproducing method according to claim 96, wherein said information recording layer is comprised of a mixture of a β-pinene polymer and an α-methylstyrene polymer.
Claim 101
Dependent Claim
102 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 62, and the information recording medium having as an information recording layer an electric charge retaining layer formed on an electrode; carrying out light information exposure after uniform exposure has been carried out over the whole surface of said photoelectric sensor to give electric charge to said information recording layer, thereby recording light information on said information recording medium; and reading and reproducing the recorded light information with an electric potential sensor.
Claim 102
Dependent Claim
111 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using a photoelectric sensor as defined in claim 62, and the information recording medium having as an information recording layer an electric charge retaining layer formed on an electrode; carrying out light information exposure after uniform exposure has been carried out over the whole surface of said photoelectric sensor to give electric charge to said information recording layer, thereby recording light information on said information recording medium; developing the recorded light information with a toner; and reproducing the recorded light information as visible information by transmitted or reflected light.
Claim 103
Dependent Claim
146 words
An information recording and reproducing method wherein light information is recorded on an information recording medium by information exposure, said method comprising: using the information recording medium comprising a photoconductive layer, a dielectric layer, an information recording layer, and an upper electrode, which are successively stacked on a lower electrode in the mentioned order, in which a photoelectric sensor part comprising said lower electrode and said photoconductive layer comprises a photoelectric sensor as defined in claim 62, at least one of said upper and lower electrodes being transparent; carrying out light information exposure while applying a voltage between said upper and lower electrodes after uniform exposure has been carried out over the whole surface of said photoelectric sensor, thereby recording light information on said information recording medium; and reproducing the light information recorded on said information recording medium as visible information by transmitted or reflected light.
Claim 104
Dependent Claim
18 words
An information recording and reproducing method according to claim 100, wherein said dielectric layer is comprised of poly-para-xylylene.
Claim 105
Dependent Claim
39 words
An information recording and reproducing method according to any one of claims 91 or 100, wherein the recorded light information is read with a scanner having a CCD sensor and output as an image by a sublimation transfer printer.
Claim 106
Dependent Claim
73 words
An information recording method according to claim 102, wherein the voltage applied between the respective electrodes of said photoelectric sensor and said information recording medium is a DC voltage of 500 V to 1,000 V, and the voltage application time is in the range of 0.01 sec. to 0.1 sec., and wherein projection exposure is carried out from the photoelectric sensor side for 1/2 sec. to 1/200 sec. by using an imaging camera.
Claim 107
Dependent Claim
18 words
A photoelectric sensor according to claim 62 wherein said photoconductive layer is comprised of an organic conductive substance.
Claim 108
Dependent Claim
138 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode, said photoelectric sensor being semiconductive and having a charge carrier at carrier trap sites in the photoconductive layer, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases after the termination of the light exposure during continuous voltage application.
Claim 109
Dependent Claim
138 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode, said photoelectric sensor being semiconductive and having a charge carrier at carrier trap sites in the photoconductive layer, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases after the termination of the light exposure during continuous voltage application.
Claim 110
Dependent Claim
172 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium, said photoelectric sensor being semiconductive and having a charge carder at carder trap sites in the photoconductive layer, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and an electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 111
Dependent Claim
172 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium, said photoelectric sensor being semiconductive and having a charge carder at carder trap sites in the photoconductive layer, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and an electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein the increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 112
Dependent Claim
199 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium comprised of an information recording layer stacked on an electrode, wherein information can be recorded on said information recording layer by an electric field or charge given thereto from said photoelectric sensor disposed to face said information recording medium, said photoelectric sensor being semiconductive, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during the voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and the electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein said increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 113
Dependent Claim
199 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium comprised of an information recording layer stacked on an electrode, wherein information can be recorded on said information recording layer by an electric field or charge given thereto from said photoelectric sensor disposed to face said information recording medium, said photoelectric sensor being semiconductive, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during the voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and the electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein said increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 114
Dependent Claim
212 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium comprised of an information recording layer stacked on an electrode, wherein information can be recorded on said information recording layer by an electric field or charge given thereto from said photoelectric sensor disposed to face said information recording medium, said photoelectric sensor being semiconductive and having a charge carrier at carder trap sites in the photoconductive layer, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during the voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and the electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein said increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
Claim 115
Dependent Claim
212 words
A photoelectric sensor comprising a photoconductive layer stacked on an electrode for recording information on an information recording medium comprised of an information recording layer stacked on an electrode, wherein information can be recorded on said information recording layer by an electric field or charge given thereto from said photoelectric sensor disposed to face said information recording medium, said photoelectric sensor being semiconductive and having a charge carrier at carder trap sites in the photoconductive layer, wherein when an electric field having an intensity of 10 5 V/cm to 10 6 V/cm is applied to said photoelectric sensor during the voltage application when unexposed to light, a passing current density through said photoelectric sensor of 10 -4 A/cm 2 to 10 -7 A/cm 2 is obtained, and when said photoelectric sensor is exposed to light during voltage application between the electrode of said photoelectric sensor and the electrode of said information recording medium, the amount of photo-induced current increases during exposure to light with time, and increases to an amount more than a calculated theoretical amount of photoelectric current generated by the light exposure, wherein said increased photo-induced current gradually decreases and continuously effects information recording to said information recording medium after the termination of the light exposure during continuous voltage application.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |