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US5488415A
Expired / Lapsed
US
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Solid-state image pickup device having a photoelectric conversion detection cell with high sensitivity
Assignee: Olympus Corp
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Filing: 1994-06-15
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Granted: 1996-01-30
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Expires: 2014-06-15
Abstract
Abstract A photoelectric conversion detection cell includes a photodiode; a storage capacitor for storing a photo-induced charge induced in the photodiode; and a transfer transistor for transferring the photo-induced charge induced in the photodiode to the storage capacitor, the source of the transfer transistor being connected to the photodiode, the drain of the transfer transistor being connected to the storage capacitor; an inverting amplifier, the input of the inverting amplifier being connected to the photodiode, the output of the inverting amplifier being connected to the gate of the transfer transistor. Also, the photo-induced charge stored in the storage capacitor may be reset and an amplified output corresponding to the photo-induced charge stored in the storage capacitor may be generated by an amplifier. The photoelectric conversion detection cell is used as a pixel to form a low noise and high sensitivity solid state image pickup device. In a further embodiment, a current mirror is connected in parallel to the storage capacitor.
Inventors
- 👤 Masayuki Uno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:09
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/50; H04N25/57; H04N25/571; H04N25/573; H04N25/70; H04N25/76; H04N25/77; H04N25/779
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
119 words
A solid-state image pickup device comprising a detection cell, said detection cell comprising: a photodiode; a storage capacitor for storing a photo-induced charge induced in said photodiode; a transfer transistor, the source of said transfer transistor being connected to said photodiode, the drain of said transfer transistor being connected to said storage capacitor; an inverter, the input of said inverter being connected to said photodiode, the output of said inverter being connected to the gate of said transfer transistor; and a current memory circuit, said current memory circuit being connected in parallel to said storage capacitor, said current memory circuit being capable of maintaining a current at a value corresponding to a current flowing out via said transfer transistor.
Claim 2
Dependent Claim
119 words
A solid-state image pickup device comprising a detection cell, said detection cell comprising: a photodiode; a storage capacitor for storing a photo-induced charge induced in said photodiode; a transfer transistor, the source of said transfer transistor being connected to said photodiode, the drain of said transfer transistor being connected to said storage capacitor; an inverter, the input of said inverter being connected to said photodiode, the output of said inverter being connected to the gate of said transfer transistor; and a current memory circuit, said current memory circuit being connected in parallel to said storage capacitor, said current memory circuit being capable of maintaining a current at a value corresponding to a current flowing out via said transfer transistor.
Claim 3
Dependent Claim
134 words
A solid-state image pickup device comprising a detection cell, said detection cell comprising: a photodiode; a storage capacitor for storing a photo-induced charge induced in said photodiode; a transfer transistor, the source of said transfer transistor being connected to said photodiode, the drain of said transfer transistor being connected to said storage capacitor; an inverter, the input of said inverter being connected to said photodiode, the output of said inverter being connected to the gate of said transfer transistor; a current memory circuit, said current memory circuit being connected in parallel to said storage capacitor, said current memory circuit being capable of maintaining a current at a value corresponding to a current flowing out via said transfer transistor; and an amplifier for generating an amplified output corresponding to the potential of said storage capacitor.
Claim 4
Dependent Claim
134 words
A solid-state image pickup device comprising a detection cell, said detection cell comprising: a photodiode; a storage capacitor for storing a photo-induced charge induced in said photodiode; a transfer transistor, the source of said transfer transistor being connected to said photodiode, the drain of said transfer transistor being connected to said storage capacitor; an inverter, the input of said inverter being connected to said photodiode, the output of said inverter being connected to the gate of said transfer transistor; a current memory circuit, said current memory circuit being connected in parallel to said storage capacitor, said current memory circuit being capable of maintaining a current at a value corresponding to a current flowing out via said transfer transistor; and an amplifier for generating an amplified output corresponding to the potential of said storage capacitor.
Claim 5
Dependent Claim
32 words
A solid-state image pickup device according to claim 2, wherein said amplifier is configured such that said amplifier outputs the change in potential of said storage capacitor relative to a reference voltage.
Claim 6
Dependent Claim
85 words
A solid-state image pickup device according to claim 2, wherein said current memory circuit comprises: a current memory transistor, the source of said current memory transistor being grounded, a capacitor is connected in parallel between the source and the gate of said current memory transistor; and a switching transistor, said switching transistor being connected between the gate and drain of said current memory transistor, said switching transistor turning on or off under the control of a pulse applied to the gate of said switching transistor.
Claim 7
Dependent Claim
85 words
A solid-state image pickup device according to claim 3, wherein said current memory circuit comprises: a current memory transistor, the source of said current memory transistor being grounded, a capacitor is connected in parallel between the source and the gate of said current memory transistor; and a switching transistor, said switching transistor being connected between the gate and drain of said current memory transistor, said switching transistor turning on or off under the control of a pulse applied to the gate of said switching transistor.
Claim 8
Dependent Claim
145 words
A solid-state image pickup device comprising a detection cell, said cell comprising: a photodiode; a storage capacitor for storing a photo-induced charge induced in said photodiode; a selection switch for reading out the signal charges stored in said storage capacitor to an output signal line; a charge transfer circuit including an inverter, and a transfer transistor having a source connected to the input of said inverter and a gate connected to the output of said inverter, said charge transfer circuit, connected to said storage capacitor at a node, transferring said photo-induced charge induced in said photodiode to said storage capacitor while maintaining said photodiode at a constant potential; and a current memory circuit, connected to said node detecting, as a photo-induced current, the photo-induced charge induced in said photodiode and for storing the detected current value, thereby drawing the photo-induced charge induced in said photodiode.
Claim 9
Dependent Claim
145 words
A solid-state image pickup device comprising a detection cell, said cell comprising: a photodiode; a storage capacitor for storing a photo-induced charge induced in said photodiode; a selection switch for reading out the signal charges stored in said storage capacitor to an output signal line; a charge transfer circuit including an inverter, and a transfer transistor having a source connected to the input of said inverter and a gate connected to the output of said inverter, said charge transfer circuit, connected to said storage capacitor at a node, transferring said photo-induced charge induced in said photodiode to said storage capacitor while maintaining said photodiode at a constant potential; and a current memory circuit, connected to said node detecting, as a photo-induced current, the photo-induced charge induced in said photodiode and for storing the detected current value, thereby drawing the photo-induced charge induced in said photodiode.
Claim 10
Dependent Claim
23 words
A solid-state image pickup device according to claim 6, wherein said current memory circuit is connected in parallel with said charge storage capacitor.
Claim 11
Dependent Claim
35 words
A solid-state image pickup device according to claim 6, further comprising an amplifier connected between said storage capacitor and said selection switch, for producing an amplified output corresponding to the potential of said storage capacitor.
Claim 12
Dependent Claim
32 words
A solid-state image pickup device according to claim 8, wherein said amplifier is configured such that said amplifier outputs the change in potential of said storage capacitor relative to a reference voltage.
Claim 13
Dependent Claim
84 words
A solid-state image pickup device according to claim 6, wherein said current memory circuit comprises: a current memory transistor, the source of said current memory transistor being grounded, a capacitor connected in parallel between the source and the gate of said current memory transistor; and a switching transistor, said switching transistor being connected between the gate and drain of said current memory transistor, said switching transistor turning on or off under the control of a pulse applied to the gate of said switching transistor.
Claim 14
Dependent Claim
85 words
A solid-state image pickup device according to claim 9, wherein said current memory circuit comprises: a current memory transistor, the source of said current memory transistor being grounded, a capacitor connected in parallel between the source and the gate of said current memory transistor; and a switching transistor, said switching transistor being connected between the gate and the drain of said current memory transistor, said switching transistor turning on or off under the control of a pulse applied to the gate of said switching transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |