US5486770A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency wafer probe apparatus and method
Assignee: NXP USA Inc
•
Filing: 1994-06-27
•
Granted: 1996-01-23
•
Expires: 2014-06-27
Abstract
Abstract An apparatus for probing high frequency electronic devices in wafer form includes a high frequency wafer probe (16, 56) having a conductor (36, 61), a dielectric layer (37, 71, 72), a grounding layer (38, 81, 82, 91), a signal probe needle (39,86), and a pair of ground needles (43, 72, 76) coupled to a substrate (11, 51). A plurality of high frequency wafer probes (16, 56) can be coupled to the substrate (11, 51) to probe high density high frequency electronic devices and to probe high frequency electronic devices having varying bonding pad layouts. The high frequency wafer probe (16, 56) is less sensitive to varying bonding pad height. The apparatus is suitable for probing high frequency electronic devices in a wafer manufacturing environment.
Inventors
- 👤 Scott V. Johnson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:19
CPC Classifications
G; G01; G01R; G01R1/00; G01R1/02; G01R1/06; G01R1/067; G01R1/06772
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
184 words
A high frequency wafer probe apparatus comprising: a substrate having a top surface, a bottom surface, and an opening extending through the substrate from the top surface to the bottom surface; an insulating ring disposed within the opening; and a high frequency coaxial wafer probe having a first end and a second end, a conductor extending from the first end to the second end, a dielectric layer surrounding the conductor, a grounding layer surrounding the dielectric layer, and a pair of ground probe needles coupled to the grounding layer opposite each other, wherein the conductor extends beyond the dielectric layer and the grounding layer at the first end to form a signal probe needle; and wherein the pair of ground probe needles are adjacent the signal probe needle, and wherein the high frequency coaxial wafer probe is embedded in the insulating ring such that the signal probe needle and the pair of ground probe needles extend below the bottom surface of the substrate, and wherein the second end of the high frequency coaxial wafer probe is adapted for coupling to a high frequency tester.
Claim 2
Dependent Claim
184 words
A high frequency wafer probe apparatus comprising: a substrate having a top surface, a bottom surface, and an opening extending through the substrate from the top surface to the bottom surface; an insulating ring disposed within the opening; and a high frequency coaxial wafer probe having a first end and a second end, a conductor extending from the first end to the second end, a dielectric layer surrounding the conductor, a grounding layer surrounding the dielectric layer, and a pair of ground probe needles coupled to the grounding layer opposite each other, wherein the conductor extends beyond the dielectric layer and the grounding layer at the first end to form a signal probe needle; and wherein the pair of ground probe needles are adjacent the signal probe needle, and wherein the high frequency coaxial wafer probe is embedded in the insulating ring such that the signal probe needle and the pair of ground probe needles extend below the bottom surface of the substrate, and wherein the second end of the high frequency coaxial wafer probe is adapted for coupling to a high frequency tester.
Claim 3
Dependent Claim
20 words
The apparatus of claim 1 wherein the pair of ground probe needles are substantially parallel to the signal probe needle.
Claim 4
Dependent Claim
32 words
The apparatus of claim 1 further comprising a high frequency connector coupled to the substrate for connecting the second end of the high frequency coaxial wafer probe to the high frequency tester.
Claim 5
Dependent Claim
12 words
The apparatus of claim 1 wherein the insulating ring comprises a ceramic.
Claim 6
Dependent Claim
34 words
The apparatus of claim 1 wherein the dielectric layer comprises a silicon oxide, and wherein the high frequency coaxial wafer probe has an outer diameter in a range from approximately 0.45 to 0.80 mm.
Claim 7
Dependent Claim
23 words
The apparatus of claim 1 wherein the pair of ground probe needles have probe tips that taper inward towards the signal probe needle.
References Cited (Backward Citations)
US3731191A
Cited
US4116523A
Cited
US4697143A
Cited
US4686463A
Cited
US4727319A
Cited
US4791363A
Cited
US4829242A
Cited
US4871964A
Cited
US4965514A
Cited
US5041782A
Cited
JPH04206845A
Cited
JPH0563049A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-22 | 1999-07-24 | 2000-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-22 | 2003-07-24 | 2004-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-22 | 2007-07-24 | 2008-01-23 | $7700.00 | Window Closed / Lapsed |