Patent US5486719A successfully refreshed from Google Patents.
US5486719A
Expired / Lapsed
US
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Semiconductor device including insulating film arrangement having low reflectance
Assignee: Toshiba Corp
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Filing: 1994-04-14
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Granted: 1996-01-23
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Expires: 2014-04-14
Abstract
Abstract In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.
Inventors
- 👤 Souichi Sugiura
- 👤 Hidehiro Watanabe
- 👤 Seiko Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/41; H10W20/435; H10W20/47; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
104 words
A semiconductor device, comprising: a semiconductor substrate; a gate electrode insulatively spaced from said semiconductor substrate; a wiring layer insulatively spaced from said semiconductor substrate; a first insulating film formed only on said wiring layer, said first insulating film having a reflectance which is 25% or more; a second insulating film formed only on said first insulating film, said second insulating film having a reflectance which is 25% or more and said first and second insulating films having a total reflectance of less than 25%; and a third insulating film covering said gate electrode, said wiring layer, and said first and second insulating films.
Claim 2
Dependent Claim
104 words
A semiconductor device, comprising: a semiconductor substrate; a gate electrode insulatively spaced from said semiconductor substrate; a wiring layer insulatively spaced from said semiconductor substrate; a first insulating film formed only on said wiring layer, said first insulating film having a reflectance which is 25% or more; a second insulating film formed only on said first insulating film, said second insulating film having a reflectance which is 25% or more and said first and second insulating films having a total reflectance of less than 25%; and a third insulating film covering said gate electrode, said wiring layer, and said first and second insulating films.
Claim 3
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein said first insulating film is a silicon nitride film.
Claim 4
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein said second insulating film is a silicon oxide film.
Claim 5
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein said third insulating film is a silicon oxide film.
Claim 6
Dependent Claim
45 words
The semiconductor device according to claim 1, wherein said first insulating film is a silicon nitride film having a thickness between about 200 to 300 Å and said second insulating film is a silicon oxide film having a thickness between about 400 to 900 Å.
Claim 7
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein said first insulating film is a silicon oxide film.
Claim 8
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein said second insulating film is a silicon nitride film.
Claim 9
Dependent Claim
32 words
The semiconductor device according to claim 1, wherein said first and second insulating films have a reflectance of 25% or more with respect to radiation having a wavelength of about 365 nanometers.
Claim 10
Dependent Claim
45 words
The semiconductor device according to claim 1, wherein said first insulating film is a silicon oxide film having a thickness between about 1000 to 1100 Å and said second insulating film is a silicon nitride film having a thickness between about 200 to 400 Å.
References Cited (Backward Citations)
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