Scan technique to reduce transient wafer temperatures during ion implantation

Claim 2

Method of ion implantation comprising directing an ion beam at a target and mechanically imparting a scanning movement between said beam and said target, wherein slow active ion-implantation mechanical scans in one direction are alternated with rapid inactive ion-implantation mechanical scans in the reverse direction.

Claim 3

Method according to claim 1, wherein said inactive scans are rendered inactive by intercepting said ion beam prior to striking said target.

Claim 4

Method according to claim 1 including steps for reducing transient temperature effects while treating a workpiece with a radiation beam, the workpiece being mounted on the major surface of a target located in the path of the beam, which comprises the steps of: rotating the target about an axis essentially parallel to the beam, repeatedly executing with the beam a traverse of the target along a path substantially perpendicular to the beam to trace a spiral path commencing on the target radially outside the workpiece and ending radially inside the workpiece, varying the traversing velocity as a function of the distance between said axis and the beam, gating off the ion beam after each such traverse and, prior to the next traverse, rapidly traversing the target along a path substantially perpendicular to the beam to trace a flyback spiral path commencing on the target radially inside the workpiece and ending radially outside the workpiece.

Claim 5

Method according to claim 1 including steps for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly said steps comprising the following steps: producing said ion beam in the form of an elongated ribbon shape, supporting a first Faraday cup in the path of said beam, mounting a single semiconductor substrate in an assembly, optimizing said ion beam in a setup Faraday cup situated upstream of the wafer mounting assembly so that the beam has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, retracting said setup Faraday cup so that said beam impinges on said first Faraday cup, integrating the beam current and using the integrated beam current to drive a servomechanical system that imparts motion to said assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, controlling the servomechanical system so that a uniform distribution of ions are implanted into the substrate, re-inserting the setup Faraday cup to intercept the ion beam after it has reached its end position, and rapidly translating the assembly in a flyback mode.

Claim 6

Method according to claim 1 including steps for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly said steps comprising the following steps: producing said ion beam in the form of an elongated ribbon shape, mounting a single semiconductor substrate in an assembly adapted to act as a Faraday cup, optimizing said ion beam in a setup Faraday cup situated upstream of the wafer mounting assembly so that the beam has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, retracting said setup Faraday cup so that said beam impinges on said assembly acting as a Faraday cup, integrating the beam current and using the integrated beam current to drive a servomechanical system that imparts motion to said assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, controlling the servomechanical system so that a uniform distribution of ions are implanted into the substrate, re-inserting the setup Faraday cup to intercept the ion beam after it has reached its end position, and rapidly translating the assembly in a flyback mode.

Claim 7

Method according to claim 1 including steps for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly said steps comprising the following steps: producing in an ion beam generation assembly said ion beam in the form of an elongated ribbon shape, supporting a first Faraday cup in the path of said beam, mounting a single semiconductor substrate in an assembly, optimizing said ion beam in a setup Faraday cup situated upstream of the wafer mounting assembly so that the beam has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, retracting said setup Faraday cup so that said beam impinges on said first Faraday cup, integrating the beam current and using the integrated beam current to drive a servomechanical system that imparts motion to said ion beam generation assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the wafer mounting assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, controlling the servomechanical system so that a uniform distribution of ions are implanted into the substrate, re-inserting the setup Faraday cup to intercept the ion beam after it has reached its end position, and rapidly translating the assembly in a flyback mode.

Claim 8

Method according to claim 1 including steps for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly said steps comprising the following steps: producing in an ion beam generation assembly said ion beam in the form of an elongated ribbon shape, mounting a single semiconductor substrate in an assembly adapted to act as a Faraday cup, optimizing said ion beam in a setup Faraday cup situated upstream of the wafer mounting assembly so that the beam has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, retracting said setup Faraday cup so that said beam impinges on said assembly acting as a Faraday cup, integrating the beam current and using the integrated beam current to drive a servomechanical system that imparts motion to said ion beam generation assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the wafer mounting assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, controlling the servomechanical system so that a uniform distribution of ions are implanted into the substrate, re-inserting the setup Faraday cup to intercept the ion beam after it has reached its end position, and rapidly translating the assembly in a flyback mode.

Claim 9

Apparatus for ion implantation comprising a target, means for directing an ion beam at said target, and means for mechanically imparting a scanning movement between said beam and said target, wherein slow active ion-implantation mechanical scans in one direction are alternated with rapid inactive ion-implantation mechanical scans in the reverse direction.

Claim 10

Apparatus for ion implantation comprising a target, means for directing an ion beam at said target, and means for mechanically imparting a scanning movement between said beam and said target, wherein slow active ion-implantation mechanical scans in one direction are alternated with rapid inactive ion-implantation mechanical scans in the reverse direction.

Claim 11

In apparatus according to claim 8, wherein said apparatus is of the type including (a) a moving support element for carrying a workpiece in a scanning direction, (b) means for providing relative translation between said support element and said beam in a control direction generally orthogonal to said scanning direction, (c) measuring means for measuring the intensity of said beam, and (d) control means for varying the speed of translation in said control direction, wherein said support element has a slot extending generally along said control direction, wherein said beam measuring means comprises means positioned behind said support element for measuring the intensity of said beam travelling through said slot, and wherein said control means comprises means for varying the speed of translation in said control direction in dependent response to said measured beam intensity travelling through said slot, the improvement comprising improved means for providing said relative translation wherein said translation is from a first terminal position which is outside said workpiece at one edge thereof to a second terminal position which is outside said workpiece at an edge thereof opposite said one edge, and improved control means wherein said control means includes means for rapid flyback translation from said second terminal position to said first terminal position, and wherein said apparatus includes means for intercepting said beam during said rapid flyback translation, thereby reducing transient temperature effects.

Claim 12

Apparatus according to claim 8 including components for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly, said components comprising in combination: means for producing said ion beam in the form of an elongated ribbon shape, a first Faraday cup supported in the path of said beam, a mounting assembly for mounting a single semiconductor substrate upon said mounting assembly, a setup Faraday cup situated upstream of the wafer mounting assembly, means to insert said setup Faraday cup so as to intercept said beam and optimize the beam so that it has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, means for retracting said setup Faraday cup so that said beam impinges on said first Faraday cup, a servomechanical system adapted to impart motion to said assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, means for integrating the beam current collected by said first Faraday cup and using the integrated beam current to drive the servomechanical system and controlling it so that a uniform distribution of ions are implanted into the substrate, means for re-inserting the setup Faraday cup to intercept the ion beam after it has reached its end position, and means for rapidly translating the assembly in a flyback mode, so that said ion beam moves rapidly from said end position to said start position.

Claim 13

Apparatus according to claim 8 including components for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly said components comprising in combination: means for producing said ion beam in the form of an elongated ribbon shape, a mounting assembly for mounting a single semiconductor substrate thereupon, said mounting assembly being adapted to act as a Faraday cup, a setup Faraday cup situated upstream of the wafer mounting assembly, means to insert said setup Faraday cup so as to intercept said beam and optimize the beam so that it has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, means for retracting said setup Faraday cup so that said beam impinges on said assembly acting as Faraday cup, a servomechanical system adapted to impart motion to said assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, means for integrating the beam current collected by said assembly acting as Faraday cup and using the integrated beam current to drive the servomechanical system and controlling it so that a uniform distribution of ions are implanted into the substrate, means for re-inserting the setup Faraday cup to intercept the ion beam after it has reached its said end position, and means for rapidly translating the assembly in a flyback mode, so that said ion beam moves rapidly from said end position to said start position.

Claim 14

Apparatus according to claim 8 including components for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly said components comprising in combination: an ion beam generation assembly for producing said ion beam in the form of an elongated ribbon shape, a first Faraday cup supported in the path of said beam, a mounting assembly for mounting a single semiconductor substrate thereupon, a setup Faraday cup situated upstream of the wafer mounting assembly, means to insert said setup Faraday cup so as to intercept said beam and optimize the beam so that it has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, means for retracting said setup Faraday cup so that said beam impinges on said first Faraday cup, a servomechanical system adapted to impart motion to said ion beam generation assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the wafer mounting assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, means for integrating the beam current collected by said first Faraday cup and using the integrated beam current to drive the servomechanical system and controlling it so that a uniform distribution of ions are implanted into the substrate, means for re-inserting the setup Faraday cup to intercept the ion beam after it has reached its end position, and means for rapidly translating the assembly in a flyback mode, so that said ion beam moves rapidly from said end position to said start position.

Claim 15

Apparatus according to claim 8 including components for reducing transient temperature effects while treating said target with said ion beam wherein said target comprises a substrate mounted on a wafer mounting assembly said components comprising in combination: an ion beam generation assembly for producing said ion beam in the form of an elongated ribbon shape, a mounting assembly for mounting a single semiconductor substrate thereupon, said mounting assembly being adapted to act as a Faraday cup, a setup Faraday cup situated upstream of the wafer mounting assembly, means to insert said setup Faraday cup so as to intercept said beam and optimize the beam so that it has an elongated ribbon shape such that the ribbon will have a length of at least two centimeters greater than the diameter of the substrate when it impinges on the substrate, means for retracting said setup Faraday cup so that said beam impinges on said assembly acting as a Faraday cup, a servomechanical system adapted to impart motion to said ion beam generation assembly in a direction substantially perpendicular to said beam and transverse to its ribbon shape so that the ribbon of the beam sweeps over the wafer mounting assembly and the substrate mounted thereon from a start position at least some distance from one lateral side of said substrate to an end position at least some distance from the opposite lateral side of said substrate, means for integrating the beam current collected by said assembly acting as a Faraday cup and using the integrated beam current to drive the servomechanical system and controlling it so that a uniform distribution of ions are implanted into the substrate, means for re-inserting the setup Faraday cup to intercept the ion beam after it has reached its end position, and means for rapidly translating the assembly in a flyback mode, so that said ion beam moves rapidly from said end position to said start position.