Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
247 words
A method of fabricating a capacitor for dynamic random access memory cell, comprising the steps of: (a) providing a semiconductor substrate having a transistor device formed thereon, said transistor device comprising a gate electrode and source/drain regions; (b) sequentially forming a first insulating layer, a second insulating layer, and a barrier layer on said semiconductor substrate; (c) etching a portion of said barrier layer to form a first contact opening over one of said source/drain regions; (d) forming a first sidewall spacer on a sidewall of said first contact opening of said barrier layer; (e) forming a second contact opening by etching said second insulating layer using said barrier layer and said first sidewall spacer as a mask; (f) forming a second sidewall spacer on a sidewall of said second contact opening of said second insulating layer; (g) removing said barrier layer and forming a third contact opening by etching said first insulating layer using said first sidewall spacer, said second sidewall spacer, and said second insulating layer as a mask; (h) removing said second sidewall spacer; (i) forming a first electrode plate overlying exposed surfaces of said first sidewall spacer, said second insulating layer, said first insulating layer, and said semiconductor substrate, wherein said first electrode plate is connected to one of said source/drain regions through said third contact opening; (j) forming a dielectric layer on said first electrode plate; and k) forming a second electrode plate on said dielectric layer to complete the capacitor fabrication.
Claim 2
Independent Claim
247 words
A method of fabricating a capacitor for dynamic random access memory cell, comprising the steps of: (a) providing a semiconductor substrate having a transistor device formed thereon, said transistor device comprising a gate electrode and source/drain regions; (b) sequentially forming a first insulating layer, a second insulating layer, and a barrier layer on said semiconductor substrate; (c) etching a portion of said barrier layer to form a first contact opening over one of said source/drain regions; (d) forming a first sidewall spacer on a sidewall of said first contact opening of said barrier layer; (e) forming a second contact opening by etching said second insulating layer using said barrier layer and said first sidewall spacer as a mask; (f) forming a second sidewall spacer on a sidewall of said second contact opening of said second insulating layer; (g) removing said barrier layer and forming a third contact opening by etching said first insulating layer using said first sidewall spacer, said second sidewall spacer, and said second insulating layer as a mask; (h) removing said second sidewall spacer; (i) forming a first electrode plate overlying exposed surfaces of said first sidewall spacer, said second insulating layer, said first insulating layer, and said semiconductor substrate, wherein said first electrode plate is connected to one of said source/drain regions through said third contact opening; (j) forming a dielectric layer on said first electrode plate; and k) forming a second electrode plate on said dielectric layer to complete the capacitor fabrication.
Claim 3
Dependent Claim
37 words
The method of claim 1, prior to the step (j) of forming said dielectric layer further comprising a step of patterning said first electrode plate and said second insulating layer to define a margin of said capacitor.
Claim 4
Dependent Claim
29 words
The method of claim 1, wherein said first insulating layer and said barrier layer are made of silicon dioxide, and said second insulating layer is made of silicon nitride.
Claim 5
Dependent Claim
14 words
The method of claim 1, wherein said first sidewall spacer is a polysilicon layer.
Claim 6
Dependent Claim
14 words
The method of claim 1, wherein said second sidewall spacer is a photoresist layer.
Claim 7
Dependent Claim
20 words
The method of claim 1, wherein both said first electrode plate and said second electrode plate are made of polysilicon.
Claim 8
Dependent Claim
17 words
The method of claim 1, wherein said dielectric layer is constructed by a two-layered configuration of nitride/oxide.
Claim 9
Dependent Claim
17 words
The method of claim 1, wherein said dielectric layer is constructed by a three-layered configuration of oxide/nitride/oxide.
Claim 10
Dependent Claim
17 words
The method of claim 1, wherein said dielectric layer is constructed of a layer of tantalum pentoxide.