Method of making increased-density flash EPROM that requires less area to form the metal bit line-to-drain contacts

Claim 1

A method of fabricating the array of a high-density flash electrically programmable read-only-memory (EEPROM), the method comprising the steps of: providing a semiconductor substrate of P-type conductivity; forming a plurality of spaced-apart field oxide regions on the semiconductor substrate; forming a plurality of first implanted channel regions in the semiconductor substrate so that a pair of first implanted channel regions are formed between each pair of horizontally-adjacent field oxide regions, and so that each first implanted channel region adjoins both of the adjacent field oxide regions, each implanted channel region having a first side and a second side; forming a layer of first gate dielectric material on the semiconductor substrate; forming a layer of first conductive material over the layer of first gate dielectric material; forming a layer of intermediate dielectric material over the layer of first conductive material; etching the layer of intermediate dielectric material and the layer of first conductive material to define a plurality of strips of dielectric/conductive material; forming a layer of second conductive material over the strips of dielectric/conductive material, the field oxide regions, and the semiconductor substrate; forming a layer of third conductive material over the layer of second conductive material; forming a layer of first insulation material over the layer of third conductive material; etching the layer of first insulation material, the layer of third conductive material, and the layer of second conductive material to form a plurality of word lines; etching the layer of intermediate dielectric material and the layer of first conductive material to form a plurality of floating gate memory cells; forming a plurality of N+ buried drain regions in the semiconductor substrate so that each drain region adjoins the first side of each pair of implanted channel regions; forming a plurality of common source bit lines in the semiconductor substrate so that the second side of each implanted channel region formed in one row of implanted channel regions and the second side of each implanted channel region formed in an adjacent row of implanted channel regions are adjoined by one common source bit line; forming a plurality of strips of second insulation material so that each strip of second insulation material is formed over one common source bit line; forming a plurality of strips of spacer material so that each strip of spacer material covers a portion of each drain region and each horizontally-adjacent field oxide region in each row of drain regions, and adjoins one word line, the underlying stacked gate structures, and the overlying layer of first insulation material; forming a plurality of intermediate interconnect strips over the strips of second insulation material, the strips of spacer material, the layers of first insulation, and the drain regions so that each intermediate interconnect strip interconnects each drain region in one column of drain regions; forming a layer of third insulation material having a plurality of metal bit line openings formed therethrough over the strips of second insulation material, the strips of spacer material, the layers of first insulation material, the semiconductor substrate, and the plurality of intermediate interconnect strips so that each intermediate interconnect strip is periodically exposed by a metal bit line opening; and forming a plurality of metal bit lines over the layer of third insulation material and the exposed portion of each intermediate interconnect strip so that each metal bit line interconnects the exposed portions of one intermediate interconnect strip.

Claim 2

A method of fabricating the array of a high-density flash electrically programmable read-only-memory (EEPROM), the method comprising the steps of: providing a semiconductor substrate of P-type conductivity; forming a plurality of spaced-apart field oxide regions on the semiconductor substrate; forming a plurality of first implanted channel regions in the semiconductor substrate so that a pair of first implanted channel regions are formed between each pair of horizontally-adjacent field oxide regions, and so that each first implanted channel region adjoins both of the adjacent field oxide regions, each implanted channel region having a first side and a second side; forming a layer of first gate dielectric material on the semiconductor substrate; forming a layer of first conductive material over the layer of first gate dielectric material; forming a layer of intermediate dielectric material over the layer of first conductive material; etching the layer of intermediate dielectric material and the layer of first conductive material to define a plurality of strips of dielectric/conductive material; forming a layer of second conductive material over the strips of dielectric/conductive material, the field oxide regions, and the semiconductor substrate; forming a layer of third conductive material over the layer of second conductive material; forming a layer of first insulation material over the layer of third conductive material; etching the layer of first insulation material, the layer of third conductive material, and the layer of second conductive material to form a plurality of word lines; etching the layer of intermediate dielectric material and the layer of first conductive material to form a plurality of floating gate memory cells; forming a plurality of N+ buried drain regions in the semiconductor substrate so that each drain region adjoins the first side of each pair of implanted channel regions; forming a plurality of common source bit lines in the semiconductor substrate so that the second side of each implanted channel region formed in one row of implanted channel regions and the second side of each implanted channel region formed in an adjacent row of implanted channel regions are adjoined by one common source bit line; forming a plurality of strips of second insulation material so that each strip of second insulation material is formed over one common source bit line; forming a plurality of strips of spacer material so that each strip of spacer material covers a portion of each drain region and each horizontally-adjacent field oxide region in each row of drain regions, and adjoins one word line, the underlying stacked gate structures, and the overlying layer of first insulation material; forming a plurality of intermediate interconnect strips over the strips of second insulation material, the strips of spacer material, the layers of first insulation, and the drain regions so that each intermediate interconnect strip interconnects each drain region in one column of drain regions; forming a layer of third insulation material having a plurality of metal bit line openings formed therethrough over the strips of second insulation material, the strips of spacer material, the layers of first insulation material, the semiconductor substrate, and the plurality of intermediate interconnect strips so that each intermediate interconnect strip is periodically exposed by a metal bit line opening; and forming a plurality of metal bit lines over the layer of third insulation material and the exposed portion of each intermediate interconnect strip so that each metal bit line interconnects the exposed portions of one intermediate interconnect strip.