US5476816A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for etching an insulating layer after a metal etching step
Assignee: NXP USA Inc
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Filing: 1994-03-28
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Granted: 1995-12-19
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Expires: 2014-03-28
Abstract
Abstract A metal etch processing sequence eliminates the need to use an organic masking layer solvent and etches a portion of an insulating layer after a plasma metal etching step. The etch of the insulating layer is performed with an etching solution that may include 1,2-ethanediol, hydrogen fluoride, and ammonium fluoride. The etching solution etches in a range of 100-900 angstroms of the insulating layer. The etch removes at least 75 percent of the mobile ions within the insulating layer, and should remove at least 95 percent of the mobile ions. The process may be implemented using an acid hood, an acid compatible spray tool, or a puddle processing tool. The process includes many different embodiments that allow the process to be easily integrated into many different existing processing sequences. A similar process may be used with a resist-etch-back processing sequence.
Inventors
- 👤 Karl E. Mautz
- 👤 Jeffrey G. Cadenhead
- 👤 Thomas M. Allen
- 👤 H. Adam Stevens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:42
CPC Classifications
H; H10; H10P; H10P52/00; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/071; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
131 words
A process for forming a semiconductor device comprising the steps of: forming a first insulating layer over a semiconductor substrate; depositing a metal-containing layer over the first insulating layer; forming a patterned organic masking layer over the metal-containing layer thereby forming exposed portions of the metal-containing layer; etching the exposed portions of the metal-containing layer with a halide-containing plasma etchant to form an interconnect member; removing the patterned organic masking layer with a plasma gas; etching a portion of the first insulating layer with a fluoride-containing solution, wherein this step: etches at least 100 angstroms of the first insulating layer; and is performed after the step of etching the exposed portions and prior to forming any layer over the interconnect member; and forming a second insulating layer over the interconnect member.
Claim 2
Dependent Claim
131 words
A process for forming a semiconductor device comprising the steps of: forming a first insulating layer over a semiconductor substrate; depositing a metal-containing layer over the first insulating layer; forming a patterned organic masking layer over the metal-containing layer thereby forming exposed portions of the metal-containing layer; etching the exposed portions of the metal-containing layer with a halide-containing plasma etchant to form an interconnect member; removing the patterned organic masking layer with a plasma gas; etching a portion of the first insulating layer with a fluoride-containing solution, wherein this step: etches at least 100 angstroms of the first insulating layer; and is performed after the step of etching the exposed portions and prior to forming any layer over the interconnect member; and forming a second insulating layer over the interconnect member.
Claim 3
Dependent Claim
30 words
The process of claim 1, wherein the step of etching the portion of the first insulating layer etches at least 75 percent of mobile ions from the first insulating layer.
Claim 4
Dependent Claim
28 words
The process of claim 1, wherein the fluoride-containing solution includes: hydrogen fluoride; ammonium fluoride; and a chemical selected from a group consisting of an alcohol and a glycol.
Claim 5
Dependent Claim
20 words
The process of claim 1, wherein the fluoride-containing solution is at a temperature in a range of 20-50 degrees Celsius.
Claim 6
Dependent Claim
29 words
The process of claim 1, wherein the step of etching the portion of the first insulating layer etches in a range of 200-500 angstroms of the first insulating layer.
Claim 7
Dependent Claim
37 words
The process of claim 1, further comprising a step of rinsing the substrate with deionized water between the steps of etching the exposed portions of the metal-containing layer and etching the portion of the first insulating layer.
Claim 8
Dependent Claim
83 words
The process of claim 1, further comprising steps of: rinsing the substrate with a chemical selected from a group consisting of an alcohol and a glycol before rinsing the substrate with deionized water; rinsing the substrate with deionized water; and drying the substrate, wherein the steps of rinsing the substrate with a chemical, rinsing the substrate with deionized water, and drying the substrate are performed between the steps of etching the portion of the first insulating layer and forming a second insulating layer.
Claim 9
Dependent Claim
44 words
The process of claim 7, wherein the steps of etching the portion of the first insulating layer, rinsing the substrate with the chemical, rinsing the substrate with deionized water, and drying the substrate are performed in an acid-compatible spray tool during the same cycle.
Claim 10
Dependent Claim
134 words
A process for forming a semiconductor device comprising the steps of: forming a first insulating layer over a semiconductor substrate; depositing a metal-containing layer over the first insulating layer; forming a patterned organic masking layer over the metal-containing layer thereby forming exposed portions of the metal-containing layer; etching the exposed portions of the metal-containing layer with a halide-containing plasma etchant to form an interconnect member; removing the patterned organic masking layer with a plasma gas; etching a portion of the first insulating layer with a fluoride-containing solution, wherein this step: removes at least 75 percent of mobile ions from the first insulating layer; and is performed after the step of etching the exposed portions and prior to forming any layer over the interconnect member; and forming a second insulating layer over the interconnect member.
Claim 11
Dependent Claim
134 words
A process for forming a semiconductor device comprising the steps of: forming a first insulating layer over a semiconductor substrate; depositing a metal-containing layer over the first insulating layer; forming a patterned organic masking layer over the metal-containing layer thereby forming exposed portions of the metal-containing layer; etching the exposed portions of the metal-containing layer with a halide-containing plasma etchant to form an interconnect member; removing the patterned organic masking layer with a plasma gas; etching a portion of the first insulating layer with a fluoride-containing solution, wherein this step: removes at least 75 percent of mobile ions from the first insulating layer; and is performed after the step of etching the exposed portions and prior to forming any layer over the interconnect member; and forming a second insulating layer over the interconnect member.
Claim 12
Dependent Claim
29 words
The process of claim 9, wherein the step of etching the portion of the first insulating layer etches in a range of 200-500 angstroms of the first insulating layer.
Claim 13
Dependent Claim
28 words
The process of claim 9, wherein the fluoride-containing solution includes: hydrogen fluoride; ammonium fluoride; and a chemical selected from a group consisting of an alcohol and a glycol.
Claim 14
Dependent Claim
20 words
The process of claim 9, wherein the fluoride-containing solution is at a temperature in a range of 20-50 degrees Celsius.
Claim 15
Dependent Claim
37 words
The process of claim 9, further comprising a step of rinsing the substrate with deionized water between the steps of etching the exposed portions of the metal-containing layer and etching the portion of the first insulating layer.
Claim 16
Dependent Claim
83 words
The process of claim 9, further comprising steps of: rinsing the substrate with a chemical selected from a group consisting of an alcohol and a glycol before rinsing the substrate with deionized water; rinsing the substrate with deionized water; and drying the substrate, wherein the steps of rinsing the substrate with a chemical, rinsing the substrate with deionized water, and drying the substrate are performed between the steps of etching the portion of the first insulating layer and forming a second insulating layer.
Claim 17
Dependent Claim
44 words
The process of claim 14, wherein the steps of etching the portion of the first insulating layer, rinsing the substrate with the chemical, rinsing the substrate with deionized water, and drying the substrate are performed in an acid-compatible spray tool during the same cycle.
Claim 18
Dependent Claim
21 words
The process of claim 1, wherein an organic masking layer solvent is not used to remove the patterned organic masking layer.
Claim 19
Dependent Claim
26 words
The process of claim 1, wherein the fluoride-containing solution includes a carrier solvent that has a viscosity of at least 2 centipoise at 20 degrees Celsius.
Claim 20
Dependent Claim
38 words
The process of claim 7, wherein: the fluoride-containing solution includes a carrier solvent; and each of the carrier solvent and the chemical for rinsing the substrate has a viscosity of at least 2 centipoise at 20 degrees Celsius.
Claim 21
Dependent Claim
21 words
The process of claim 9, wherein an organic masking layer solvent is not used to remove the patterned organic masking layer.
Claim 22
Dependent Claim
26 words
The process of claim 9, wherein the fluoride-containing solution includes a carrier solvent that has a viscosity of at least 2 centipoise at 20 degrees Celsius.
Claim 23
Dependent Claim
38 words
The process of claim 14, wherein: the fluoride-containing solution includes a carrier solvent; and each of the carrier solvent and the chemical for rinsing the substrate has a viscosity of at least 2 centipoise at 20 degrees Celsius.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-18 | 1999-06-19 | 1999-12-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-18 | 2003-06-19 | 2003-12-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-18 | 2007-06-19 | 2007-12-19 | $7700.00 | Window Closed / Lapsed |