US5476809A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing the same
Assignee: Ray Hudson Ltd
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Filing: 1994-05-13
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Granted: 1995-12-19
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Expires: 2014-05-13
Abstract
Abstract This invention relates to a semiconductor device which comprises a monocrystalline silicon substrate, a first insulating film formed in a first region on one major surface of the monocrystalline silicon substrate, a first monocrystalline silicon layer formed on the first insulating film, a second insulating film covering a side surface of the first monocrystalline silicon layer, a first polysilicon layer formed to cause a side surface of the first polysilicon layer to contact the second insulating film, and a second monocrystalline silicon layer, having a side surface contacts the first polysilicon layer, formed in a second region of the one major surface of the monocrystalline silicon substrate, and dielectrically isolated from the first monocrystalline silicon layer, and a method of manufacturing the same.
Inventors
- 👤 Kenya Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:42
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
247 words
A method of manufacturing a semiconductor device, comprising: (1) the step of forming a first insulating film on at least one of one major surface of a first monocrystalline silicon substrate and one major surface of a second monocrystalline silicon substrate; (2) the step of directly joining said one major surface of said first monocrystalline silicon substrate and said one major surface of said second monocrystalline silicon substrate and annealing the resultant structure, thereby forming a bonded silicon substrate having said first insulating film on a contact surface; (3) the step of forming a first groove from the other major surface of said first monocrystalline silicon substrate of said bonded silicon substrate, extending through said first insulating film to reach said one major surface of said second monocrystalline silicon substrate; (4) the step of forming a second insulating film on the side walls of said first groove; (5) the step of forming a silicon layer on a surface of said bonded silicon substrate having said first groove using an epitaxial method, so that a monocrystalline silicon layer is formed above said first groove and a polysilicon layer is formed on said second insulating film formed on said side walls of said first groove; and (6) the step of polishing the resultant surface of said bonded silicon substrate to obtain a flat surface; thereby forming an island-like element formation region dielectrically isolated from another region by said first and second insulating films on said first monocrystalline silicon substrate.
Claim 2
Independent Claim
247 words
A method of manufacturing a semiconductor device, comprising: (1) the step of forming a first insulating film on at least one of one major surface of a first monocrystalline silicon substrate and one major surface of a second monocrystalline silicon substrate; (2) the step of directly joining said one major surface of said first monocrystalline silicon substrate and said one major surface of said second monocrystalline silicon substrate and annealing the resultant structure, thereby forming a bonded silicon substrate having said first insulating film on a contact surface; (3) the step of forming a first groove from the other major surface of said first monocrystalline silicon substrate of said bonded silicon substrate, extending through said first insulating film to reach said one major surface of said second monocrystalline silicon substrate; (4) the step of forming a second insulating film on the side walls of said first groove; (5) the step of forming a silicon layer on a surface of said bonded silicon substrate having said first groove using an epitaxial method, so that a monocrystalline silicon layer is formed above said first groove and a polysilicon layer is formed on said second insulating film formed on said side walls of said first groove; and (6) the step of polishing the resultant surface of said bonded silicon substrate to obtain a flat surface; thereby forming an island-like element formation region dielectrically isolated from another region by said first and second insulating films on said first monocrystalline silicon substrate.
Claim 3
Dependent Claim
159 words
A method of manufacturing a semiconductor device according to claim 1, wherein the step of forming said first groove from said other major surface of said bonded silicon substrate further comprises the steps of: (a) forming a plurality of second grooves in a region on the other major surface of said first monocrystalline silicon substrate on which said island-like element formation region is to be formed, at the same time when said first groove is formed; (b) forming third insulating films on the side walls and bottoms of said plurality of second grooves at the same time when said second insulating film is formed; (c) forming a polysilicon layer on said third insulating film; and (d) polishing the resultant surface of said bonded silicon substrate to obtain a flat surface; thereby forming respective island-like element formation regions dielectrically isolated from each other by said third insulating films in said island-like element formation region on said first monocrystalline silicon substrate.
Claim 4
Dependent Claim
48 words
A method according to claim 1, wherein said first monocrystalline silicon substrate is a silicon substrate of one conductivity type, and said second monocrystalline silicon substrate is a silicon substrate of said one conductivity type having a higher impurity concentration than that of said first monocrystalline silicon substrate.
Claim 5
Dependent Claim
48 words
A method according to claim 2, wherein said first monocrystalline silicon substrate is a silicon substrate of one conductivity type, and said second monocrystalline silicon substrate is a silicon substrate of said one conductivity type having a higher impurity concentration than that of said first monocrystalline silicon substrate.
Claim 6
Dependent Claim
48 words
A method according to claim 3, wherein an impurity region of said one conductivity type having a higher impurity concentration than that of said first monocrystalline silicon substrate is formed on said one major surface of said first monocrystalline silicon substrate before said first insulating film is formed.
Claim 7
Dependent Claim
48 words
A method according to claim 4, wherein an impurity region of said one conductivity type having a higher impurity concentration than that of said first monocrystalline silicon substrate is formed on said one major surface of said first monocrystalline silicon substrate before said first insulating film is formed.
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