WO1993026041A1
Expired / Lapsed
WO
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Bonded wafer processing
Assignee: Harris Corp
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Filing: 1993-06-17
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Granted: —
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Expires: 2013-06-17
Abstract
Abstract Warpage in a bonded wafer is limited by maintenance of a stress compensation layer on the backside of the bonded wafer during device fabrication processing. One embodiment applies a sacrificial polysilicon layer over a stress compensation silicon dioxide layer for bonded silicon wafers. The fabrication processing consumes the polysilicon layer but not the stress compensation silicon dioxide.
Inventors
- 👤 James Douglas Beasom
- 👤 Craig James Mclachlan
Bibliographic Details
Application Number
—
Jurisdiction
WO
Data Source
google_patents
Last Synchronized
2026-11-09 00:30
CPC Classifications
H; H10; H10W; H10W10/00; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P95/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/05; Y10S438/00; Y10S438/938
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