EP0469583A2
Expired / Lapsed
EP
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Semiconductor substrate with complete dielectric isolation structure and method of making the same
Assignee: Toshiba Corp
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Filing: 1991-07-31
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Granted: —
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Expires: 2011-07-31
Abstract
Abstract For reducing unwanted warpage produced in a semiconductor substrate having dielectrically isolated island regions (111), a first semiconductor substrate (11) for providing circuit elements is bonded through a first insulating film (13) to a second semiconductor substrate (12) serving as a support. A plurality of grooves (16) are then formed in the first semiconductor substrate (11) to expose a surface of the second semiconductor substrate (12), thereby providing a plurality of island regions (111) through the first insulating film (13) thereabove. Thereafter, a second insulating film (17) is formed on the exposed surface of the second semiconductor substrate (12). In the structure, the second insulating film (17) is made thinner than the first insulating film (13) so as to reduce the unwanted warpage produced in the semiconductor substrate (12).
Inventors
- 👤 Kazuyoshi C/O Intellectual Property Div Furukawa
- 👤 Kazuhiro c/o Intellectual Property Div. Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 10:11
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/041; H10W10/061; H10W10/10; H10W10/17; H10W10/181; H10W10/40; H10P90/1914; H10W10/021; H10W10/20
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
91 words
A semiconductor substrate having dielectrically isolated island regions (111) including a first semiconductor substrate (11) for providing circuit elements, a second semiconductor substrate (12) for supporting said first semiconductor substrate (11), an insulating film (13) located between said first and second semiconductor substrates (11, 12), and a plurality of grooves (16) formed in said first semiconductor substrate (11) to expose a surface of said second semiconductor substrate (12), characterized in that a plurality of island regions (111) are provided above said second semiconductor substrate (12) through only said insulating film (13).
Claim 2
Dependent Claim
91 words
A semiconductor substrate having dielectrically isolated island regions (111) including a first semiconductor substrate (11) for providing circuit elements, a second semiconductor substrate (12) for supporting said first semiconductor substrate (11), an insulating film (13) located between said first and second semiconductor substrates (11, 12), and a plurality of grooves (16) formed in said first semiconductor substrate (11) to expose a surface of said second semiconductor substrate (12), characterized in that a plurality of island regions (111) are provided above said second semiconductor substrate (12) through only said insulating film (13).
Claim 3
Dependent Claim
28 words
The semiconductor substrate according to claim 1, characterized in that a side surface of each of said island regions (111) is covered with a thin insulating film (17).
Claim 4
Dependent Claim
20 words
The semiconductor substrate according to claim 2, characterized in that said grooves (16) are filled with an insulating material (19).
Claim 5
Dependent Claim
19 words
The semiconductor substrate according to claim 1, characterized in that each of said grooves (16) has a V-shaped structure.
Claim 6
Dependent Claim
20 words
The semiconductor substrate according to claim 1, characterized in that each of said grooves (16) is comprised of a trench.
Claim 7
Dependent Claim
17 words
The semiconductor substrate according to claim 2, characterized in that said grooves are filled with polysilicon (18).
Claim 8
Dependent Claim
117 words
A semiconductor substrate having dielectrically isolated island regions (111) including a first semiconductor substrate (11) for providing circuit elements, a second semiconductor substrate (12) for supporting said first semiconductor substrate (11), a first insulating film (13) located between said first and second semiconductor substrates (11, 12), a plurality of grooves (16) formed in said first semiconductor substrate (11) to provide a plurality of island regions (111), and a second insulating film (17) provided on said second semiconductor substrate (12), characterized in that said plurality of island regions (16) are provided above said second semiconductor substrate (12) through said first insulating film (13) and that said second insulating film (17) is thinner than said first insulating film (13).
Claim 9
Dependent Claim
117 words
A semiconductor substrate having dielectrically isolated island regions (111) including a first semiconductor substrate (11) for providing circuit elements, a second semiconductor substrate (12) for supporting said first semiconductor substrate (11), a first insulating film (13) located between said first and second semiconductor substrates (11, 12), a plurality of grooves (16) formed in said first semiconductor substrate (11) to provide a plurality of island regions (111), and a second insulating film (17) provided on said second semiconductor substrate (12), characterized in that said plurality of island regions (16) are provided above said second semiconductor substrate (12) through said first insulating film (13) and that said second insulating film (17) is thinner than said first insulating film (13).
Claim 10
Dependent Claim
28 words
The semiconductor substrate according to claim 7, characterized in that a side surface of each of said island regions (111) is covered with said second insulating film (17).
Claim 11
Dependent Claim
18 words
The semiconductor substrate according to claim 8, characterized in that said grooves (16) are filled with polysilicon (18).
Claim 12
Dependent Claim
19 words
The semiconductor substrate according to claim 7, characterized in that each of said grooves (16) has a V-shaped structure.
Claim 13
Dependent Claim
19 words
The semiconductor substrate according to claim 7, characterized in that each of said grooves (16) is comprised of trench.
Claim 14
Independent Claim
88 words
A method of making a semiconductor substrate having dielectrically isolated island regions (111) comprising the steps of: preparing first and second semiconductor substrates (11, 12); forming an insulating film (13) on a surface of at least one of said first and second semiconductor substrates (11, 12); directly bonding said first semiconductor substrate (11) to said second semiconductor substrate (12) through said insulating film (13); and forming grooves (16) in said first semiconductor substrate (11) to provide a plurality of island regions (111) on said second semiconductor substrate (12).
Claim 15
Independent Claim
88 words
A method of making a semiconductor substrate having dielectrically isolated island regions (111) comprising the steps of: preparing first and second semiconductor substrates (11, 12); forming an insulating film (13) on a surface of at least one of said first and second semiconductor substrates (11, 12); directly bonding said first semiconductor substrate (11) to said second semiconductor substrate (12) through said insulating film (13); and forming grooves (16) in said first semiconductor substrate (11) to provide a plurality of island regions (111) on said second semiconductor substrate (12).
Claim 16
Dependent Claim
32 words
The method according to claim 12, characterized in that said forming grooves (16) in said first semiconductor substrate (11) includes the step of removing said insulating film (13) to a desired thickness.
Claim 17
Dependent Claim
38 words
The method according to claim 12, characterized in that said forming grooves (16) in said first semiconductor substrate (11) includes the step of removing said insulating film (13) to expose a surface of said second semiconductor substrate (12).
Claim 18
Dependent Claim
19 words
The method according to claim 13, characterized in that said grooves (16) are filled with an insulating material (19).
Claim 19
Dependent Claim
26 words
The method according to claim 14, characterized in that a thin insulating film (17) is formed on the exposed surface of said second semiconductor substrate (12).
Claim 20
Dependent Claim
27 words
The method according to claim 16, characterized in that a thin insulating film (17) is formed on a side surface of each of said island regions (111).
Claim 21
Dependent Claim
17 words
The method according to claim 17, characterized in that said grooves (16) are filled with polysilicon (18).
Claim 22
Dependent Claim
21 words
The method according to claim 16, characterized in that said thin insulating film (17) is thinner than said insulating film (13).
References Cited (Backward Citations)
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