US5475649A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual-port memory has the serial register connected to the storage cells by single-sided bitlines
Assignee: Texas Instruments Inc
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Filing: 1993-12-15
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Granted: 1995-12-12
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Expires: 2013-12-15
Abstract
Abstract A dual-port memory includes an array of dynamic storage cells and a serial register having a plurality of static stages. Each stage of the serial register is arranged for receiving a data bit from a selected storage cell of the array. A plurality of bitlines is interposed between the storage cells of the array and the stages of the serial register. At one time only a single selectable bitline is arranged for interconnecting each of the columns of storage cells with each of the stages of the serial register. Each stage of the serial register includes a latch disabling circuit for selectively enabling and disabling coupling from an output of one amplifier to an input of another amplifier. By disabling such coupling, new data easily can be written into the serial register stage. A keeper circuit in each stage of the serial register reduces power consumption.
Inventors
- 👤 Anthony M. Balistreri
- 👤 Andre J. Guillemaud
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:53
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/10; G11C7/1075
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
82 words
A dual-port memory comprising: an array of storage cells arranged in addressable rows and columns; a serial register having a plurality of stages, each stage being arranged for receiving a data bit from a selected storage cell; a plurality of bitline leads, only a single bitline lead interconnecting a column of storage cells to each different stage of the serial register; and the plurality of stages are static circuits, each including a latch disabling circuit for facilitating write in of new data.
Claim 2
Dependent Claim
82 words
A dual-port memory comprising: an array of storage cells arranged in addressable rows and columns; a serial register having a plurality of stages, each stage being arranged for receiving a data bit from a selected storage cell; a plurality of bitline leads, only a single bitline lead interconnecting a column of storage cells to each different stage of the serial register; and the plurality of stages are static circuits, each including a latch disabling circuit for facilitating write in of new data.
Claim 3
Dependent Claim
34 words
A dual-port memory, in accordance with claim 1, further comprising: a keeper circuit for assuring that potentials on complementary nodes, included in the static circuits, swing from a supply voltage to a ground potential.
Claim 4
Dependent Claim
56 words
A dual-port memory, in accordance with claim 2, further comprising: a multiplexer, interposed between a plurality of the single bitline leads and each stage of the serial register, the multiplexer being responsive to a code word for selectively coupling a data bit from one of the single bitline leads into each stage of the serial register.
Claim 5
Dependent Claim
158 words
A dual-port memory comprising: an array of storage cells; a serial register having a plurality of static stages, each stage being arranged for receiving a data bit from a selected storage cell; a plurality of bitlines interconnecting columns of storage cells to stages of the serial register, only a single-sided bitline being arranged for interconnecting one column of storage cells to an associated stage of the serial register; each stage of the serial register includes a latch circuit having first and second amplifiers, each amplifier having an input node and an output node; a lead connecting the output node of the first amplifier with the input node of the second amplifier; a latch disabling circuit for selectively enabling and disabling coupling between the output node of the second amplifier and the input node of the first amplifier; and a lead for applying a signal from the selected one single-sided bitline to the input node of the first amplifier.
Claim 6
Dependent Claim
158 words
A dual-port memory comprising: an array of storage cells; a serial register having a plurality of static stages, each stage being arranged for receiving a data bit from a selected storage cell; a plurality of bitlines interconnecting columns of storage cells to stages of the serial register, only a single-sided bitline being arranged for interconnecting one column of storage cells to an associated stage of the serial register; each stage of the serial register includes a latch circuit having first and second amplifiers, each amplifier having an input node and an output node; a lead connecting the output node of the first amplifier with the input node of the second amplifier; a latch disabling circuit for selectively enabling and disabling coupling between the output node of the second amplifier and the input node of the first amplifier; and a lead for applying a signal from the selected one single-sided bitline to the input node of the first amplifier.
Claim 7
Dependent Claim
46 words
A dual-port memory, in accordance with claim 4, further comprising: another circuit, connected between the output and input nodes of the first amplifier, to assure that potential levels on the input node of the first amplifier are either a full supply voltage or a ground potential.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-12-11 | 1999-06-12 | 1999-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-12-11 | 2003-06-12 | 2003-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-12-11 | 2007-06-12 | 2007-12-12 | $7700.00 | Window Closed / Lapsed |