Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
226 words
A thin film electronic imager device having a pixel array structure fabricated on a substrate, said pixel army structure comprising: a first electrically conductive line disposed along a first axis of said imager device; a dielectric layer disposed on said substrate and over said first electrically conductive line; a second electrically conductive line disposed along a second axis of said imager device, said second axis being oriented substantially perpendicular to said first axis, said second conductive line being disposed in said imager device in vertical alignment with said first conductive line at a respective crossover region with said dielectric layer disposed therebetween; a semiconductive island disposed in said crossover region between said dielectric layer and said second conductive line, the lateral limits of said semiconductive island extending beyond the boundaries of said crossover region; said second conductive line substantially conforming to the topography of underlying components disposed on said substrate such that said second conductive line comprises a plurality of steps disposed in correspondence with locations where said second conductive line extends over said topography; and a first protective layer and a second protective layer disposed over respective selected steps in said second conductive line, said first and second protective layers being separated by a repair area disposed therebetween at a portion of said second conductive line disposed in vertical alignment with said first conductive line.
Claim 2
Dependent Claim
226 words
A thin film electronic imager device having a pixel array structure fabricated on a substrate, said pixel army structure comprising: a first electrically conductive line disposed along a first axis of said imager device; a dielectric layer disposed on said substrate and over said first electrically conductive line; a second electrically conductive line disposed along a second axis of said imager device, said second axis being oriented substantially perpendicular to said first axis, said second conductive line being disposed in said imager device in vertical alignment with said first conductive line at a respective crossover region with said dielectric layer disposed therebetween; a semiconductive island disposed in said crossover region between said dielectric layer and said second conductive line, the lateral limits of said semiconductive island extending beyond the boundaries of said crossover region; said second conductive line substantially conforming to the topography of underlying components disposed on said substrate such that said second conductive line comprises a plurality of steps disposed in correspondence with locations where said second conductive line extends over said topography; and a first protective layer and a second protective layer disposed over respective selected steps in said second conductive line, said first and second protective layers being separated by a repair area disposed therebetween at a portion of said second conductive line disposed in vertical alignment with said first conductive line.
Claim 3
Dependent Claim
19 words
The device of claim 1 wherein said respective first and second protective layers each comprise an organic dielectric material.
Claim 4
Dependent Claim
36 words
The device of claim 2 wherein said second conductive line comprises first and second steps disposed in correspondence with opposite sidewalls of said dielectric layer where said dielectric layer extends over said first electrically conductive line.
Claim 5
Dependent Claim
28 words
The device of claim 3 wherein said first and second protective layers are disposed so as to cover the outer edges of said first and second steps respectively.
Claim 6
Dependent Claim
41 words
The device of claim 4 wherein said second conductive line further comprises a third and a fourth step disposed in correspondence with opposite sides of said semiconductive island where said second conductive line extends over the sidewalls of said semiconductive island.
Claim 7
Dependent Claim
41 words
The device of claim 5 wherein said first protective layer is disposed over said first and third steps of said second conductive line, and said second protective layer is disposed over said second and fourth steps of said second conductive line.
Claim 8
Dependent Claim
59 words
The device of claim 5 wherein said first protective layer is disposed to cover said third step of said second conductive line without covering said first step of said second conductive line, and said second protective layer is disposed to cover said fourth step of said second conductive line without covering said second step of said second conductive line.
Claim 9
Dependent Claim
12 words
The device of claim 2 wherein said organic dielectric material comprises polyimide.
Claim 10
Dependent Claim
31 words
The device of claim 8 wherein the thickness of polyimide disposed in each of said first and second protective layers is in the range between about 0.5 μm and 2.5 μm.
Claim 11
Dependent Claim
35 words
The device of claim 2 wherein said first and second protective layers are disposed such that said repair area has an area in the range between about 100 μm 2 and 1000 μm 2 .
Claim 12
Dependent Claim
11 words
The device of claim 14 wherein said semiconductive island comprises silicon.
Claim 13
Dependent Claim
24 words
The device of claim 11 wherein said semiconductive island comprises material corresponding to semiconductive material comprising field effect transistors disposed in said imager device.
Claim 14
Dependent Claim
23 words
The device of claim 1 wherein the area of said crossover region is between about 100 μm 2 and 1600 μm 2 .
Claim 15
Dependent Claim
32 words
The device of claim 1 further comprising a third protective layer disposed over said first and second protective layers and said repair area, said third protective layer comprising an inorganic dielectric material.
Claim 16
Dependent Claim
13 words
The device of claim 14 wherein said third protective layer comprises silicon nitride.
Claim 17
Dependent Claim
25 words
The device of claim 15 wherein said silicon nitride third protective layer has a thickness in the range between about 0.1 μm and 1.5 μm.