Patent US5470398A successfully refreshed from Google Patents.
← Back to Patent Explorer
US5470398A Expired / Lapsed US ⏱️ 0.0 years remaining

Dielectric thin film and method of manufacturing same

Assignee: Panasonic Holdings Corp
•
Filing: 1991-09-23
•
Granted: 1995-11-28
•
Expires: 2011-09-23
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O 2 , N 2 O, and a mixture of O 2 and N 2 O by plasma-decomposing the raw materials with the application of a strong electric field.

Inventors

  • 👤 Munehiro Shibuya
  • 👤 Masatoshi Kitagawa
  • 👤 Takeshi Kamada
  • 👤 Takashi Hirao

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:58
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 60 words
A single dielectric film comprising oxides of titanium and silicon, said film having a high dielectric constant and a low leakage current resulting from a single step deposition by exposing a substrate to a plasma generated by simultaneously flowing titanium chloride, nitrogen, nitrous oxide and a monosilane into a vacuum chamber containing the substrate and means for creating said plasma.
Claim 2
Dependent Claim 60 words
A single dielectric film comprising oxides of titanium and silicon, said film having a high dielectric constant and a low leakage current resulting from a single step deposition by exposing a substrate to a plasma generated by simultaneously flowing titanium chloride, nitrogen, nitrous oxide and a monosilane into a vacuum chamber containing the substrate and means for creating said plasma.
Claim 3
Dependent Claim 39 words
A dielectric film comprising oxides of silicon and titanium said film deposited in a single step on a substrate by plasma chemical vapor deposition using titanium chloride and monosilane as reactants and nitrogen and nitrous oxide as carrier gases.
Claim 4
Dependent Claim 39 words
A dielectric film comprising oxides of silicon and titanium said film deposited in a single step on a substrate by plasma chemical vapor deposition using titanium chloride and monosilane as reactants and nitrogen and nitrous oxide as carrier gases.
Claim 5
Dependent Claim 48 words
A dielectric film deposited in a single step used as an insulating film of a capacitor in a semiconductor dynamic random access memory, said dielectric film comprises oxides of titanium and silicon with a dielectric constant about 20 and a leakage current about 10 -9 A/cm 2 .
Claim 6
Dependent Claim 48 words
A dielectric film deposited in a single step used as an insulating film of a capacitor in a semiconductor dynamic random access memory, said dielectric film comprises oxides of titanium and silicon with a dielectric constant about 20 and a leakage current about 10 -9 A/cm 2 .
Claim 7
Dependent Claim 37 words
A dielectric film of claim 3, wherein said dielectric film comprises oxides of silicon and titanium formed by plasma chemical vapor deposition using monosilane and titanium chloride simultaneously as reactants in a vacuum at least 0.4 torr.
Claim 8
Dependent Claim 34 words
A dielectric film of claim 1, wherein said dielectric constant is substantially similar to that of an SiO 2 film and said leakage current is substantially similar to that of a TiO 2 film.

References Cited (Backward Citations)

US4731560A Cited
US4310567A Cited
US4486096A Cited
US4665608A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-11-27 1999-05-29 1999-11-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-11-27 2003-05-29 2003-11-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-11-27 2007-05-29 2007-11-28 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag