Patent US5233163A successfully refreshed from Google Patents.
Patent US5470265A successfully refreshed from Google Patents.
← Back to Patent Explorer
US5470265A Expired / Lapsed US ⏱️ 0.0 years remaining

Multi-electron source, image-forming device using multi-electron source, and methods for preparing them

Assignee: Canon Inc
•
Filing: 1993-01-28
•
Granted: 1995-11-28
•
Expires: 2013-01-28
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A multi-electron source has a plurality of electron emitting portions arranged on a substrate. Each electron emitting portion comprises a conductive film containing a crack with an average width of 0.05 μm to 1 μm. The electron emitting portions are prepared by subjecting conductive films, preferably of fine particles, to a pulse voltage application treatment.

Inventors

  • 👤 Ichiro Nomura
  • 👤 Yoshikazu Banno
  • 👤 Tetsuya Kaneko
  • 👤 Toshihiko Takeda
  • 👤 Kumi Iwai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:41
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/316; H01J2201/00; H01J2201/30; H01J2201/316; H01J2201/3165; H01J2329/00

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 44 words
A method for preparing a multi-electron source which comprises subjecting conductive films arranged between electrodes to a conduction treatment to form a plurality of electron emitting portions at a time, said conduction treatment being carried out by applying a pulse voltage between said electrodes.
Claim 2
Independent Claim 44 words
A method for preparing a multi-electron source which comprises subjecting conductive films arranged between electrodes to a conduction treatment to form a plurality of electron emitting portions at a time, said conduction treatment being carried out by applying a pulse voltage between said electrodes.
Claim 3
Dependent Claim 26 words
The method for preparing a multi-electron source according to claim 1, wherein said pulse voltage is selected in the range of 4 V to 20 V.
Claim 4
Dependent Claim 49 words
The method for preparing a multi-electron source according to claim 1, wherein the pulse width of said pulse voltage is selected in the range of 1 μsec. to 1 sec., and the pulse interval of said pulse voltage is selected in the range of 100 μsec. to 10 sec.
Claim 5
Dependent Claim 20 words
The method for preparing a multi-electron source according to claim 1, wherein said conductive films are made of palladium oxide.
Claim 6
Dependent Claim 31 words
The method for preparing a multi-electron source according to claim 1, wherein the sheet resistance of said conductive films is in the range of 1×10 3 Ω/s to 1×10 7 Ω/s.
Claim 7
Dependent Claim 29 words
The method for preparing a multi-electron source according to claim 1, wherein the pitch of said electron emitting portions is in the range of 0.01 mm to 2 mm.
Claim 8
Dependent Claim 20 words
The method for preparing a multi-electron source according to claim 1, wherein said conductive films are films of fine particles.
Claim 9
Dependent Claim 30 words
The method for preparing a multi-electron source according to claim 7, wherein the average particle diameter of said fine particles is in the range of 10 Å to 0.5 μm.
Claim 10
Independent Claim 49 words
A method for manufacturing an electron emitting device comprising a multi-electron source and modulation means for modulating a plurality of electron beams emitted from said multi-electron source in accordance with an information signal, said multi-electron source being prepared according to the method as defined in any of claims 1-6.
Claim 11
Independent Claim 63 words
A method for manufacturing an image forming device comprising a multi-electron source, modulation means for modulating a plurality of electron beams emitted from said multi-electron source in accordance with an information signal and an image forming member for forming an image by irradiation with the electron beams, said multi-electron source being prepared according to the method as defined in any of claims 1-6.

References Cited (Backward Citations)

US4358474A Cited
US4661370A Cited
JPS61221783A Cited
US4904895A Cited
US4956578A Cited
US5155416A Cited
JPH0256822A Cited
US5023110A Cited
US4954744A Cited
JPH0428139A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-11-27 1999-05-29 1999-11-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-11-27 2003-05-29 2003-11-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-11-27 2007-05-29 2007-11-28 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag