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US5469806A
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Method for epitaxial growth of semiconductor crystal by using halogenide
Assignee: NEC Corp
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Filing: 1993-08-20
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Granted: 1995-11-28
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Expires: 2013-08-20
Abstract
Abstract Epitaxial growth is carried out to form crystal such as GaAs, Si, etc. by using GaCl, SiCl 2 , etc. In the epitaxial growth, Cl atoms are left on the crystal growth surface. The Cl atoms are removed in the form of HCl molecules by vibrationally-excited H 2 molecules.
Inventors
- 👤 Yuji Mochizuki
- 👤 Yoshie Chiba
- 👤 Toshikazu Takada
- 👤 Akira Usui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:46
CPC Classifications
B; B82; B82Y; B82Y30/00; C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/42; B82Y10/00; C30B25/00; C30B25/02
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
119 words
A method for epitaxial growth of a semiconductor crystal by using halogenide, said method comprising the steps of: exciting H 2 molecules into vibration and supplying said vibrationally-excited H 2 molecules onto a surface of a semiconductor crystal substrate under epitaxial growth, said epitaxial growth being carried out by using halogenide, so that Cl atoms are left on said surface of said semiconductor crystals; removing said Cl atoms on said surface of said semiconductor substrate in accordance with formation of HCl molecules between said vibration-excited H 2 molecules and said Cl atoms; said halogenide being selected from a group consisting of GaCl and SiCl 2 , and said epitaxial growth being carried out at a temperature of 200° C.
Claim 2
Independent Claim
119 words
A method for epitaxial growth of a semiconductor crystal by using halogenide, said method comprising the steps of: exciting H 2 molecules into vibration and supplying said vibrationally-excited H 2 molecules onto a surface of a semiconductor crystal substrate under epitaxial growth, said epitaxial growth being carried out by using halogenide, so that Cl atoms are left on said surface of said semiconductor crystals; removing said Cl atoms on said surface of said semiconductor substrate in accordance with formation of HCl molecules between said vibration-excited H 2 molecules and said Cl atoms; said halogenide being selected from a group consisting of GaCl and SiCl 2 , and said epitaxial growth being carried out at a temperature of 200° C.
Claim 3
Dependent Claim
34 words
A method for epitaxial growth of semiconductor crystal by using halogenide, according to claim 1, further comprising the step of: exhausting said molecules from said surface of said semiconductor crystal substrate to an exterior.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-27 | 1999-05-29 | 1999-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-27 | 2003-05-29 | 2003-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-27 | 2007-05-29 | 2007-11-28 | $7700.00 | Window Closed / Lapsed |