Semiconductor memory device including redundancy circuit for remedying defect in memory portion

Claim 2

A semiconductor memory device including a redundancy circuit for replacing a defective memory cell with a redundancy memory cell, wherein said redundancy circuit includes a program circuit for carrying out a programming to replace said defective memory cell with said redundancy memory cell, said program circuit includes a first fuse for selecting between usage and nonusage of said redundancy memory cell, a second fuse for selecting a designation signal designating said defective memory cell, a transmission gate provided in series with said second fuse, and a potential fixing circuit responsive to connection or disconnection of said first fuse for turning on or off said transmission gate.

Claim 3

The semiconductor memory device as recited in claim 1, comprising a memory cell array including a plurality of memory cells disposed in the row and column directions, and a row predecoder predecoding a row address signal to provide predecode signals, wherein said program circuit selectively passes only a predecode signal designating a defective memory cell row including said defective memory cell out of said predecode signals, said redundancy circuit includes a redundancy memory cell row to be displaced with said defective memory cell in said memory cell array, and a redundancy row decoder responsive to the predecode signal passing said program circuit for designating said redundancy memory cell row and disabling said row decoder, said first fuse selects between usage and nonusage of said redundancy memory cell row, and said second fuse selects a predecode signal designating said defective memory cell row.

Claim 4

The semiconductor memory device as recited in claim 2, wherein said program circuit includes a third fuse for fixing said second fuse and the output side of said transmission gate to a constant potential.

Claim 5

The semiconductor memory device as recited in claim 2, wherein said second fuse is provided at the output side of said transmission gate.

Claim 6

The semiconductor memory device as recited in claim 2, wherein said second fuse is provided at the input side of said transmission gate.

Claim 7

The semiconductor memory device as recited in claim 2, wherein said transmission gate is turned off when said redundancy memory cell row is not used, and turned on when said redundancy memory cell row is used.

Claim 8

The semiconductor memory device as recited in claim 1, comprising a memory cell array including a plurality of memory cells disposed in the row and column directions, and a column predecoder predecoding a column address signal for providing predecode signals, said program circuit selectively passes only a predecode signal designating a defective memory cell column including said defective memory cell out of said predecode signals, said redundancy circuit includes a redundancy memory cell column to be replaced with said defective memory cell column in said memory cell array, and a redundancy column decoder responsive to the predecode signal passing said program circuit for designating said redundancy memory cell column and disabling said column decoder, said first fuse selects between usage and nonusage of said redundancy memory cell column, and said second fuse selects a predecode signal designating said defective memory cell column.

Claim 9

The semiconductor memory device as recited in claim 7, wherein said program circuit includes a third fuse for fixing said second fuse and the output side of the transmission gate to a constant potential.

Claim 10

The semiconductor memory device as recited in claim 7, wherein said second fuse is provided at the output side of said transmission gate.

Claim 11

The semiconductor memory device as recited in claim 7, wherein said second fuse is provided at the input side of said transmission gate.

Claim 12

The semiconductor memory device as recited in claim 7, wherein said transmission gate is turned off when said redundancy memory cell column is not used, and turned on when said redundancy memory cell column is used.