US5469103A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diode circuit for high speed switching transistor
Assignee: Fuji Electric Co Ltd
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Filing: 1994-03-22
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Granted: 1995-11-21
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Expires: 2014-03-22
Abstract
Abstract A semiconductor device, comprising a transistor, a constant voltage diode having a first end of a first conductivity type connected to an emitter of the transistor and a second end of a second conductivity type, a reverse current preventive diode having a first end of the first conductivity type connected to a collector of the transistor and a second end of the second conductivity type connected to the second end of the constant voltage diode, and a high speed diode reverse-bias connected between the transistor collector and the emitter of the transistor.
Inventors
- 👤 Hisao Shigekane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:44
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10W; H10W90/00; H10W72/00; H10W72/50; H10W72/541; H10W72/547; H10W72/5473
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
102 words
A high speed switching transistor circuit, comprising: a transistor having a base, an emitter, and a collector; a constant voltage diode having a first end of a first conductivity type connected to the emitter of the transistor and a second end of a second conductivity type; a reverse current preventive diode having a first end of the first conductivity type connected to the collector of the transistor and a second end of the second conductivity type connected to the second end of the constant voltage diode; and a high speed diode reverse-bias connected between the collector and the emitter of the transistor.
Claim 2
Dependent Claim
102 words
A high speed switching transistor circuit, comprising: a transistor having a base, an emitter, and a collector; a constant voltage diode having a first end of a first conductivity type connected to the emitter of the transistor and a second end of a second conductivity type; a reverse current preventive diode having a first end of the first conductivity type connected to the collector of the transistor and a second end of the second conductivity type connected to the second end of the constant voltage diode; and a high speed diode reverse-bias connected between the collector and the emitter of the transistor.
Claim 3
Dependent Claim
20 words
A high speed switching transistor circuit as claimed in claim 1, wherein the transistor is an insulated gate bipolar transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-20 | 1999-05-22 | 1999-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-20 | 2003-05-22 | 2003-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-20 | 2007-05-22 | 2007-11-21 | $7700.00 | Window Closed / Lapsed |