Temperature-compensated Zener diode

Claim 1

A temperature compensated Zener diode comprising: a first pn junction; a second pn junction distinct from said first junction wherein said first junction is joined to said second junction in such a way that said first pn junction can be forward-biased while said second pn junction is reverse-biased, and wherein said first junction has a first p-type silicon layer containing no diffused metal impurities and wherein said first p-type silicon layer is deposed on a first n silicon substrate wherein said first n silicon substrate has a first doping and wherein said first silicon substrate contains diffused metallic impurities, and wherein said second junction has a second p-type silicon layer deposed on a second n silicon substrate with said second n silicon substrate having a second doping distinct from said first doping and said second n silicon substrate contains no metallic impurities, and wherein said first and second substrates are in contact with each other and wherein a precise discontinuity in the structure of the Zener diode is formed by said contact between said first and second substrates.