US3953254A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing temperature compensated reference diodes utilizing selective epitaxial growth
Assignee: Thales SA
•
Filing: 1975-03-25
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Granted: 1976-04-27
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Expires: 1995-03-25
Abstract
Abstract Method of manufacturing temperature compensated zener-type semiconductor devices, made of a zener diode and two forward-biased diodes arranged in series, the three diodes being formed in a single monolithic unit on the two faces of a flat substrate, by an epitaxial technique.
Inventors
- 👤 Henri Valdman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:46
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/20; H10D8/25; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/026; Y10S438/00; Y10S438/928; Y10S438/983
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
115 words
A method of manufacturing a thermally compensated reference diode, comprising the following steps: -- the formation upon one face of a monocrystalline semiconductor substrate, of a relief button of monocrystalline semiconductor material, by selectively growing an epitaxial region of the opposite conductivity type to that of the substrate; -- the formation, upon that surface of the semiconductor substrate which is opposite to that of the first button, of a second relief button of monocrystalline semiconductor material, by selectively growing an epitaxial region of the opposite conductivity type to that of the substate; -- the formation on the second button of a monocrystalline semiconductor film having the same conductivity type as the substate by epitaxial growth.
Claim 2
Independent Claim
115 words
A method of manufacturing a thermally compensated reference diode, comprising the following steps: -- the formation upon one face of a monocrystalline semiconductor substrate, of a relief button of monocrystalline semiconductor material, by selectively growing an epitaxial region of the opposite conductivity type to that of the substrate; -- the formation, upon that surface of the semiconductor substrate which is opposite to that of the first button, of a second relief button of monocrystalline semiconductor material, by selectively growing an epitaxial region of the opposite conductivity type to that of the substate; -- the formation on the second button of a monocrystalline semiconductor film having the same conductivity type as the substate by epitaxial growth.
Claim 3
Dependent Claim
42 words
A method as claimed in claim 1, comprising, between the second and third stages, an intermediate stage in which, on the second button, there is formed a monocrystalline semiconductor film of the same conductivity type as said button but of higher resistivity.
Claim 4
Dependent Claim
33 words
A method as claimed in claim 1, moreover comprising after the last step, a heat treatment which, by diffusion at the junctions, produces adjustment of the operating voltage and of said thermal compensation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-04-27 | 1979-10-27 | 1980-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-04-27 | 1983-10-27 | 1984-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-04-27 | 1987-10-27 | 1988-04-27 | $7700.00 | Window Closed / Lapsed |