US5469047A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transistor circuit
Assignee: Mitsubishi Electric Corp
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Filing: 1994-09-26
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Granted: 1995-11-21
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Expires: 2014-09-26
Abstract
Abstract In order to obtain a constant current circuit which has an excellent constant current property and requires no plural bias circuits, a base of an NPN bipolar transistor (5) and a gate of an N-channel MOS transistor (6) are connected to a first terminal (1) in common. A collector of the transistor (5) is connected to a second terminal (2) and a source of a transistor (6) is connected to a third terminal respectively, while a voltage source (59) is connected between the first and third terminals. An emitter of the transistor (5) is connected with a drain of the transistor (6). Identical bias voltages are supplied to the base and the gate, while a gate-to-drain voltage of the transistor (6) is equal to a base-to-emitter voltage of the transistor (5). Thus, the transistor (6) operates in a pentode region, to serve as a constant current load for the transistor (5).
Inventors
- 👤 Toshio Kumamoto
- 👤 Takahiro Miki
- 👤 Hiroyuki Kouno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:51
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
178 words
A constant-current transistor circuit comprising: a first terminal; a second terminal; a third terminal; a first bipolar transistor having a first conductivity type collector electrode being connected to said second terminal, a second conductivity type base electrode being connected to said first terminal, and a first conductivity type emitter electrode; and a first MOS transistor having a first conductivity type drain electrode being connected to said emitter electrode of said first bipolar transistor, a first conductivity type source electrode being connected to said third terminal, and a gate electrode being directly connected to said base electrode of said first bipolar transistor and at the same potential as said base electrode, wherein a base to emitter voltage V BE of the bipolar transistor is less than the threshold voltage V TH of the MOS transistors so that both the bipolar transistor and said MOS transistor operate in a pentode region and said first MOS transistor and said first bipolar transistor function as a current source with said first terminal serving as a single bias terminal for said current source.
Claim 2
Dependent Claim
178 words
A constant-current transistor circuit comprising: a first terminal; a second terminal; a third terminal; a first bipolar transistor having a first conductivity type collector electrode being connected to said second terminal, a second conductivity type base electrode being connected to said first terminal, and a first conductivity type emitter electrode; and a first MOS transistor having a first conductivity type drain electrode being connected to said emitter electrode of said first bipolar transistor, a first conductivity type source electrode being connected to said third terminal, and a gate electrode being directly connected to said base electrode of said first bipolar transistor and at the same potential as said base electrode, wherein a base to emitter voltage V BE of the bipolar transistor is less than the threshold voltage V TH of the MOS transistors so that both the bipolar transistor and said MOS transistor operate in a pentode region and said first MOS transistor and said first bipolar transistor function as a current source with said first terminal serving as a single bias terminal for said current source.
Claim 3
Dependent Claim
23 words
A transistor circuit in accordance with claim 1, further comprising a voltage source being connected between said first terminal and said third terminal.
Claim 4
Dependent Claim
207 words
A constant current transistor circuit comprising: a first terminal; a second terminal; a third terminal; a fourth terminal; a first bipolar transistor having a first conductivity type collector electrode being connected to said second terminal, a first conductivity type emitter electrode being connected to said fourth terminal, and a second conductivity type base electrode being connected to said first terminal; a first MOS transistor having a first conductivity type drain electrode being connected to said emitter electrode of said first bipolar transistor, a first conductivity type source electrode being connected to said third terminal, and a gate electrode being directly connected to said base electrode of said first bipolar transistor and at the same potential as said base electrode, wherein a base to emitter voltage V BE of the bipolar transistor is less than the threshold voltage V TH of the MOS transistors so that both the bipolar transistor and said MOS transistor operate in a pentode region and said first MOS transistor and said first bipolar transistor function as a current source with said first terminal serving as a single bias terminal for said current source; and a further current source being connected to said emitter electrode of said first bipolar transistor at said fourth terminal.
Claim 5
Dependent Claim
207 words
A constant current transistor circuit comprising: a first terminal; a second terminal; a third terminal; a fourth terminal; a first bipolar transistor having a first conductivity type collector electrode being connected to said second terminal, a first conductivity type emitter electrode being connected to said fourth terminal, and a second conductivity type base electrode being connected to said first terminal; a first MOS transistor having a first conductivity type drain electrode being connected to said emitter electrode of said first bipolar transistor, a first conductivity type source electrode being connected to said third terminal, and a gate electrode being directly connected to said base electrode of said first bipolar transistor and at the same potential as said base electrode, wherein a base to emitter voltage V BE of the bipolar transistor is less than the threshold voltage V TH of the MOS transistors so that both the bipolar transistor and said MOS transistor operate in a pentode region and said first MOS transistor and said first bipolar transistor function as a current source with said first terminal serving as a single bias terminal for said current source; and a further current source being connected to said emitter electrode of said first bipolar transistor at said fourth terminal.
Claim 6
Dependent Claim
151 words
A transistor circuit comprising: a first terminal; a second terminal; a third terminal; a fourth terminal; a first bipolar transistor having a first conductivity type collector electrode being connected to said second terminal, a first conductivity type emitter electrode being connected to said fourth terminal, and a second conductivity type base electrode being connected to said first terminal; a first MOS transistor having a first conductivity type drain electrode being connected to said emitter electrode of said first bipolar transistor, a first conductivity type source electrode being connected to said third terminal, and a gate electrode being connected to said base electrode of said first bipolar transistor; a latch comparator having a feedback transistor; and a constant current circuit having a current control transistor, said feedback transistor having a control electrode being connected to said fourth terminal, said current control transistor having a control electrode being connected to said third terminal.
Claim 7
Dependent Claim
151 words
A transistor circuit comprising: a first terminal; a second terminal; a third terminal; a fourth terminal; a first bipolar transistor having a first conductivity type collector electrode being connected to said second terminal, a first conductivity type emitter electrode being connected to said fourth terminal, and a second conductivity type base electrode being connected to said first terminal; a first MOS transistor having a first conductivity type drain electrode being connected to said emitter electrode of said first bipolar transistor, a first conductivity type source electrode being connected to said third terminal, and a gate electrode being connected to said base electrode of said first bipolar transistor; a latch comparator having a feedback transistor; and a constant current circuit having a current control transistor, said feedback transistor having a control electrode being connected to said fourth terminal, said current control transistor having a control electrode being connected to said third terminal.
Claim 8
Dependent Claim
266 words
A voltage-to-current conversion transistor circuit comprising: an input terminal; first and second output terminals; first and second power source terminals; a first bipolar transistor having a first conductivity type collector electrode being connected to said first output terminal, a second conductivity type base electrode being connected to said input terminal, and a first conductivity type emitter electrode; a second bipolar transistor having a first conductivity type collector electrode being connected to said second output terminal, a second conductivity type base electrode being connected to said first power source terminal, and a first conductivity type emitter electrode; and a MOS transistor having a first conductivity type drain electrode being connected to said emitter electrodes of said first and second bipolar transistors, a first conductivity type source electrode being connected to said second power source terminal, and a gate electrode being directly connected to said base electrode of said second bipolar transistor and at the same potential as the base of said second bipolar transistor, wherein a base to emitter voltage V BE of the second bipolar transistor is less than a threshold voltage V TH of the MOS transistor so that said second bipolar transistor and said MOS transistor operate in a pentode region and function as a current source with said second input terminal serving as a single bias terminal for said current source, and where complementary currents flow to said first and second output terminals in dependence on the relative amplitude of an input voltage applied to said input terminal in relation to the amplitude of a voltage applied to said second power source terminal.
Claim 9
Dependent Claim
266 words
A voltage-to-current conversion transistor circuit comprising: an input terminal; first and second output terminals; first and second power source terminals; a first bipolar transistor having a first conductivity type collector electrode being connected to said first output terminal, a second conductivity type base electrode being connected to said input terminal, and a first conductivity type emitter electrode; a second bipolar transistor having a first conductivity type collector electrode being connected to said second output terminal, a second conductivity type base electrode being connected to said first power source terminal, and a first conductivity type emitter electrode; and a MOS transistor having a first conductivity type drain electrode being connected to said emitter electrodes of said first and second bipolar transistors, a first conductivity type source electrode being connected to said second power source terminal, and a gate electrode being directly connected to said base electrode of said second bipolar transistor and at the same potential as the base of said second bipolar transistor, wherein a base to emitter voltage V BE of the second bipolar transistor is less than a threshold voltage V TH of the MOS transistor so that said second bipolar transistor and said MOS transistor operate in a pentode region and function as a current source with said second input terminal serving as a single bias terminal for said current source, and where complementary currents flow to said first and second output terminals in dependence on the relative amplitude of an input voltage applied to said input terminal in relation to the amplitude of a voltage applied to said second power source terminal.
Claim 10
Dependent Claim
47 words
A transistor circuit in accordance with claim 5, further comprising: a first resistor being connected between said emitter electrode of said first bipolar transistor and said drain electrode; and a second resistor being connected between said emitter electrode of said second bipolar transistor and said drain electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-20 | 1999-05-22 | 1999-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-20 | 2003-05-22 | 2003-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-20 | 2007-05-22 | 2007-11-21 | $7700.00 | Window Closed / Lapsed |