US5466614A — Structure and method for remotely measuring proce…

Claim 1

Independent Claim 164 words

Apparatus for sensing process conditions during a process in which a plurality of silicon wafer elements are being fabricated, comprising: a primary inductor structure having a primary coil, a current source and at least one sensor for measuring electrical values in said inductor structure; and a silicon wafer monitor element which is similar in material and shape to the silicon wafer elements being fabricated, said monitor element being included in a batch of said silicon wafer elements being fabricated and including a current loop structure which acts as a secondary coil in cooperation with said primary inductor structure, whereby the monitor element is subjected to the same process conditions as the elements being fabricated, and whereby the electrical characteristics of said primary inductor structure vary in accordance with the ambient process conditions of the silicon wafer monitor element to affect electrical conditions in said primary coil and are measured by at least one said sensor to indicate temperature data concerning the elements being fabricated.

Claim 2

Dependent Claim 164 words

Apparatus for sensing process conditions during a process in which a plurality of silicon wafer elements are being fabricated, comprising: a primary inductor structure having a primary coil, a current source and at least one sensor for measuring electrical values in said inductor structure; and a silicon wafer monitor element which is similar in material and shape to the silicon wafer elements being fabricated, said monitor element being included in a batch of said silicon wafer elements being fabricated and including a current loop structure which acts as a secondary coil in cooperation with said primary inductor structure, whereby the monitor element is subjected to the same process conditions as the elements being fabricated, and whereby the electrical characteristics of said primary inductor structure vary in accordance with the ambient process conditions of the silicon wafer monitor element to affect electrical conditions in said primary coil and are measured by at least one said sensor to indicate temperature data concerning the elements being fabricated.

Claim 3

Dependent Claim 20 words

The apparatus of claim 1, in which the structure included in the monitor element is a closed continuous current loop.

Claim 4

Dependent Claim 42 words

The apparatus of claim 1, in which the structure included in the monitor element is a portion of a spiral, the ends of which are joined by a strap, which is insulated from the portions of the spiral over which it passes.

Claim 5

Dependent Claim 13 words

The apparatus of claim 3, in which the strap is of semiconductive material.

Claim 6

Dependent Claim 13 words

The apparatus of claim 3, in which the strap is of conductive material.

Claim 7

Dependent Claim 13 words

The apparatus of claim 3, in which the strap is of resistive material.

Claim 8

Dependent Claim 20 words

The apparatus of claim 1, in which the secondary coil structure is located on a surface of the monitor element.

Claim 9

Dependent Claim 25 words

The apparatus of claim 1, in which the secondary coil structure has a characteristic resonant frequency for a given structure and set of ambient conditions.

Claim 10

Dependent Claim 27 words

The apparatus of claim 1, in which the impedance of the secondary coil structure is determined by changes in current amplitude and phase within the primary coil.

Claim 11

Dependent Claim 90 words

A silicon wafer monitor element for monitoring process conditions during a process of fabrication of at least one silicon wafer element by being included in the process with said at least one element being fabricated, said monitor element being of similar material and configuration as the element being fabricated, said monitor element including a current loop structure capable of functioning as a secondary coil when placed in operative relation to a measuring apparatus having a primary coil and at least one sensor for sensing electrical conditions of said secondary coil.

Claim 12

Dependent Claim 90 words

A silicon wafer monitor element for monitoring process conditions during a process of fabrication of at least one silicon wafer element by being included in the process with said at least one element being fabricated, said monitor element being of similar material and configuration as the element being fabricated, said monitor element including a current loop structure capable of functioning as a secondary coil when placed in operative relation to a measuring apparatus having a primary coil and at least one sensor for sensing electrical conditions of said secondary coil.

Claim 13

Dependent Claim 21 words

The monitor element of claim 10, in which the structure included in the monitor element is a closed continuous current loop.

Claim 14

Dependent Claim 45 words

The monitor element of claim 10, in which the secondary coil structure included in the monitor element is a portion of a spiral, the ends of which are joined by a strap, which is insulated from the portions of the spiral over which it passes.

Claim 15

Dependent Claim 14 words

The monitor element of claim 12, in which the strap is of semiconductive material.

Claim 16

Dependent Claim 14 words

The monitor element of claim 12, in which the strap is of conductive material.

Claim 17

Dependent Claim 14 words

The monitor element of claim 12, in which the strap is of resistive material.

Claim 18

Dependent Claim 20 words

The monitor element of claim 10, in which the electrical conditions being sensed provide the temperature of the monitor element.

Claim 19

Dependent Claim 15 words

The monitor element of claim 10, in which the monitor element is of semiconductive material.

Claim 20

Dependent Claim 13 words

The monitor element of claim 10, in which the monitor element is silicon.

Claim 21

Dependent Claim 173 words

A process for remotely measuring temperature data relating to at least one silicon wafer undergoing a fabrication process, comprising the following steps: (a) including in the process a silicon wafer monitor element, similar in material and shape to the silicon wafer for which temperature data is to be measured, having a structure associated therewith which is capable of acting as a secondary current loop of a measuring structure; (b) providing an associated measuring structure having a primary coil, a sensing device and a current source; (c) applying current through the associated primary coil of the measuring structure with the monitor element in proximity to the measuring structure; (d) measuring changes in current amplitude and phase in the primary coil when the second current loop is brought into operative relation therewith; (e) determining the temperature data of said monitor-element based upon said changes in current amplitude and phase; and (f) determining the temperature data relating to the silicon wafer undergoing the process on the basis of the corresponding data determined for the monitor element.

Claim 22

Dependent Claim 173 words

A process for remotely measuring temperature data relating to at least one silicon wafer undergoing a fabrication process, comprising the following steps: (a) including in the process a silicon wafer monitor element, similar in material and shape to the silicon wafer for which temperature data is to be measured, having a structure associated therewith which is capable of acting as a secondary current loop of a measuring structure; (b) providing an associated measuring structure having a primary coil, a sensing device and a current source; (c) applying current through the associated primary coil of the measuring structure with the monitor element in proximity to the measuring structure; (d) measuring changes in current amplitude and phase in the primary coil when the second current loop is brought into operative relation therewith; (e) determining the temperature data of said monitor-element based upon said changes in current amplitude and phase; and (f) determining the temperature data relating to the silicon wafer undergoing the process on the basis of the corresponding data determined for the monitor element.

Claim 23

Dependent Claim 19 words

The process of claim 19, in which the structure associated with the monitor element is a closed continuous loop.

Claim 24

Dependent Claim 42 words

The process of claim 19, in which the structure associated with the monitor element is a portion of a spiral, the ends of which are joined by a strap, which is insulated from the portions of the spiral over which it passes.

Claim 25

Dependent Claim 13 words

The process of claim 21, in which the strap is of semiconductive material.

Claim 26

Dependent Claim 13 words

The process of claim 21, in which the strap is of conductive material.

Claim 27

Dependent Claim 13 words

The process of claim 21, in which the strap is of resistive material.

Claim 28

Dependent Claim 157 words

A process for remotely measuring temperature data relating to at least one silicon wafer undergoing a fabrication process, comprising the following steps: (a) including in the process a silicon wafer monitor element, similar in material and shape to the silicon wafer for which temperature data is to be measured, having a structure associated therewith which is capable of acting as a secondary current loop of a measuring structure; (b) providing an associated measuring structure having a primary coil, a sensing device and a current source; (c) applying current through the associated primary coil of the measuring structure with the monitor element in proximity to the measuring structure to induce eddy currents in the monitor element; (d) measuring the change in electrical characteristics in the primary coil caused by the induced eddy currents in the monitor element; and (e) determining the temperature data relating to the monitor element from said change in electrical characteristics in the primary coil.

Claim 29

Dependent Claim 157 words

A process for remotely measuring temperature data relating to at least one silicon wafer undergoing a fabrication process, comprising the following steps: (a) including in the process a silicon wafer monitor element, similar in material and shape to the silicon wafer for which temperature data is to be measured, having a structure associated therewith which is capable of acting as a secondary current loop of a measuring structure; (b) providing an associated measuring structure having a primary coil, a sensing device and a current source; (c) applying current through the associated primary coil of the measuring structure with the monitor element in proximity to the measuring structure to induce eddy currents in the monitor element; (d) measuring the change in electrical characteristics in the primary coil caused by the induced eddy currents in the monitor element; and (e) determining the temperature data relating to the monitor element from said change in electrical characteristics in the primary coil.

Claim 30

Dependent Claim 116 words

Apparatus for sensing process conditions during a process in which a plurality of silicon wafer elements are being fabricated, comprising: a primary inductor structure having a primary coil, a current source and at least one sensor for measuring electrical values in said inductor structure; and a silicon wafer monitor element which is similar in material and shape to the silicon wafer elements being fabricated, said monitor element being included in a batch of said silicon wafer elements being fabricated and including a current loop structure which acts as a secondary coil in cooperation with said primary inductor structure, whereby conditions of said primary coil are measured to indicate data concerning the silicon wafer elements being fabricated.

Claim 31

Dependent Claim 116 words

Apparatus for sensing process conditions during a process in which a plurality of silicon wafer elements are being fabricated, comprising: a primary inductor structure having a primary coil, a current source and at least one sensor for measuring electrical values in said inductor structure; and a silicon wafer monitor element which is similar in material and shape to the silicon wafer elements being fabricated, said monitor element being included in a batch of said silicon wafer elements being fabricated and including a current loop structure which acts as a secondary coil in cooperation with said primary inductor structure, whereby conditions of said primary coil are measured to indicate data concerning the silicon wafer elements being fabricated.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1998-11-13	1999-05-15	1999-11-14	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2002-11-13	2003-05-15	2003-11-14	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2006-11-13	2007-05-15	2007-11-14	$7700.00	Window Closed / Lapsed

Structure and method for remotely measuring process data

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