Measurement for sheet resistance of semiconductor layer

Abstract

Abstract PURPOSE:To measure a sheet resistance without contact by inserting the sheet resistance of a semiconductor diffusion layer between two coils wherein a high- frequency current flows through a coil and induced electromotive force on the diffu- sion layer is calculated. CONSTITUTION:A high-frequency current i flows through a coil 1 to produce an eddy current in a sample 3 and induced electromotive force is produced in a coil 2 by the eddy current. Furthermore, a compensating coil 4 is arranged at a location contrasting with the coil 1 to offset the direct and mutual induced dielectromotive 9orce of the coils 1 and 2. And only induced dielectromotive force by the eddy current produced in the sample is measured. On the other hand, e0 is the sum of two sections on a diffusion layer and a substrate and sheet resistivity rhos will be known from the relation of e0=K(2/rhos+W/rho0) when the thickness W of the substrate part and the resistivity rho0 are known. The value of K is decided from a standard sample. In this composition, the sheet resistance of a semiconductor diffusion layer will be measured without contact.

Inventors

• 👤 Naohiro Monma
• 👤 Hiroshi Kaneko
• 👤 Hiroyuki Taniguchi
• 👤 Mitsuru Hirao

Bibliographic Details