§
Luxuse
Patent Intelligence
Sign In
← Back to Patent Explorer
US5466612A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing a solid-state image pickup device

Assignee: Panasonic Holdings Corp
•
Filing: 1993-06-24
•
Granted: 1995-11-14
•
Expires: 2013-06-24
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A dielectric film is formed on a P type silicon substrate. Then a specified resist pattern is formed on the dielectric film. Using this resist pattern as the mask, a phosphorus ion beam is implanted. Then, removing the resist pattern, heat treatment is given. By this heat treatment, a photo diode is formed in a depth of about 1 μm. A specified resist pattern is formed again on the dielectric film. Using this resist pattern as the mask, boron ions are implanted. Thus, a channel stopper region is formed. Afterwards, removing the resist pattern, the dielectric film is removed. Again, a dielectric film is formed on the silicon substrate. Later, a stacked oxide film is formed in the other regions than the region for forming the photo diode on the dielectric film. Using the stacked oxide film as the mask, a boron ion beam is implanted. When operated in such conditions, a P type diffusion layer of opposite conductive type of photo diode was formed on the surface of the photo diode, and the leak current in the photo diode becomes low. Consecutively, a fluorine ion beam is implanted on the entire surface of the silicon substrate. Thus, on the surface of the photo diode and on the P type diffusion layer, a diffusion layer by fluorine is provided. Thus, to suppress the leak current generated in the photo diode, the interface state density is lowered, while the level of implantation defects may be suppressed at the same time.

Inventors

  • 👤 Genshu Fuse
  • 👤 Katuya Ishikawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 03:54
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S438/00; Y10S438/91

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 118 words
A method of manufacturing a semiconductor device comprising: at least a step of forming a photo diode of one conductive type on a semiconductor substrate, a step of forming an impurity layer of opposite conductive type of said photo diode on a surface of said photo diode formed on said semiconductor substrate, and a step of implanting fluorine ions into the impurity layer, wherein said fluorine ions are implanted through a dielectric film formed on said semiconductor substrate, and the fluorine ion implantation is effected at such an acceleration energy that a maximum dose of the fluorine ion implantation appears in said dielectric film while a substantial implant dose of the fluorine ion appears in said impurity layer.
Claim 2
Independent Claim 118 words
A method of manufacturing a semiconductor device comprising: at least a step of forming a photo diode of one conductive type on a semiconductor substrate, a step of forming an impurity layer of opposite conductive type of said photo diode on a surface of said photo diode formed on said semiconductor substrate, and a step of implanting fluorine ions into the impurity layer, wherein said fluorine ions are implanted through a dielectric film formed on said semiconductor substrate, and the fluorine ion implantation is effected at such an acceleration energy that a maximum dose of the fluorine ion implantation appears in said dielectric film while a substantial implant dose of the fluorine ion appears in said impurity layer.
Claim 3
Independent Claim 203 words
A method of manufacturing a solid-state image pickup device comprising: a step of forming a photo diode of one conductive type on a semiconductor substrate, a step of forming a transfer channel on said semiconductor substrate at a specific gap from said photo diode; a step forming a gate dielectric film on said semiconductor substrate, a step of forming a transfer gate electrode on said transfer channel through said gate dielectric film, a step of forming an interlayer film on said transfer gate electrode, a step of forming diffusion layers on a surface of said photo diode by implanting ions of an impurity of the opposite conductive type of said photo diode and ions of fluorine simultaneously or alternately from above said interlayer film, and a step of forming a light-shield film on said interlayer film on said transfer gate electrode for shielding said transfer channel from light, wherein said fluorine implantation is effected through a dielectric film formed said semiconductor substrate and said fluorine ion implantation is effected at such an acceleration energy that a maximum dose of said fluorine ion implantation appears in said dielectric film, while a substantial implant dose of the fluorine ions appears in said first diffusion layer.
Claim 4
Independent Claim 203 words
A method of manufacturing a solid-state image pickup device comprising: a step of forming a photo diode of one conductive type on a semiconductor substrate, a step of forming a transfer channel on said semiconductor substrate at a specific gap from said photo diode; a step forming a gate dielectric film on said semiconductor substrate, a step of forming a transfer gate electrode on said transfer channel through said gate dielectric film, a step of forming an interlayer film on said transfer gate electrode, a step of forming diffusion layers on a surface of said photo diode by implanting ions of an impurity of the opposite conductive type of said photo diode and ions of fluorine simultaneously or alternately from above said interlayer film, and a step of forming a light-shield film on said interlayer film on said transfer gate electrode for shielding said transfer channel from light, wherein said fluorine implantation is effected through a dielectric film formed said semiconductor substrate and said fluorine ion implantation is effected at such an acceleration energy that a maximum dose of said fluorine ion implantation appears in said dielectric film, while a substantial implant dose of the fluorine ions appears in said first diffusion layer.

References Cited (Backward Citations)

US4197633A Cited
US4506436A Cited
US4746622A Cited
US4977096A Cited
JPH01292857A Cited
JPH02266565A Cited
JPH03266465A Cited
JPH04218966A Cited
JPH04167469A Cited
JPH053311A Cited
US5146297A Cited
JPH05251680A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1998-11-13 1999-05-15 1999-11-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2002-11-13 2003-05-15 2003-11-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2006-11-13 2007-05-15 2007-11-14 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag