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Patent US5465680A successfully refreshed from Google Patents.
US5465680A
Expired / Lapsed
US
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Method of forming crystalline silicon carbide coatings
Assignee: Dow Silicones Corp
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Filing: 1993-07-01
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Granted: 1995-11-14
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Expires: 2013-07-01
Abstract
Abstract A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above about 600° C. in the presence of trimethylsilane gas.
Inventors
- 👤 Mark J. Loboda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:37
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
74 words
A method of growing an epitaxial silicon carbide film on a silicon substrate comprising: forming a silicon carbide buffer layer on the silicon substrate; heating the silicon substrate having the silicon carbide buffer layer to a temperature in the range of about 650° to 1000° C.; and contacting the heated silicon substrate having the silicon carbide buffer layer with a gas comprising trimethylsilane for a time sufficient to grow the epitaxial silicon carbide film.
Claim 2
Independent Claim
74 words
A method of growing an epitaxial silicon carbide film on a silicon substrate comprising: forming a silicon carbide buffer layer on the silicon substrate; heating the silicon substrate having the silicon carbide buffer layer to a temperature in the range of about 650° to 1000° C.; and contacting the heated silicon substrate having the silicon carbide buffer layer with a gas comprising trimethylsilane for a time sufficient to grow the epitaxial silicon carbide film.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the silicon carbide buffer layer is formed on the silicon substrate by carbonization.
Claim 4
Dependent Claim
32 words
The method of claim 2 wherein the carbonization is performed by contacting the silicon substrate with a gas mixture comprising a hydrocarbon and hydrogen gas at a temperature above about 1000° C.
Claim 5
Dependent Claim
23 words
The method of claim 3 wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, ethylene and acetylene.
Claim 6
Dependent Claim
48 words
The method of claim 1 wherein the silicon substrate is cleaned prior to growing the silicon carbide buffer layer by a method selected from the group consisting of dipping the substrate in an acid and exposing the substrate to HCl/H 2 at a temperature above about 1000° C.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein the gas also comprises an inert carrier gas in a ratio of trimethylsilane:carrier in the range of about 1:1 to about 1:10000.
Claim 8
Dependent Claim
36 words
The method of claim 1 wherein the heated silicon substrate having the silicon carbide buffer layer is contacted with the trimethylsilane gas for a time in the range of between about 1 and about 30 minutes.
Claim 9
Dependent Claim
37 words
The method of claim 1 wherein the heated silicon substrate having the silicon carbide buffer layer is contacted with the trimethylsilane gas at a pressure in the range of between about 10 -6 Torr and atmospheric pressure.
Claim 10
Dependent Claim
37 words
The method of claim 1 wherein growth of the epitaxial silicon carbide film is assisted by a vapor deposition technique selected from the group consisting of molecular beam epitaxy, ion beams, lasers assisted CVD and hot filaments.
Claim 11
Dependent Claim
15 words
The method of claim 1 wherein the gas also comprises (CH 3 ) 3 SiP.
Claim 12
Independent Claim
56 words
A method of growing an epitaxial silicon carbide film on a silicon carbide substrate comprising: heating the silicon carbide substrate to a temperature in the range of about about 650° to 1000° C.; and contacting the heated silicon carbide substrate with a gas comprising trimethylsilane for a time sufficient to grow the epitaxial silicon carbide film.
Claim 13
Independent Claim
56 words
A method of growing an epitaxial silicon carbide film on a silicon carbide substrate comprising: heating the silicon carbide substrate to a temperature in the range of about about 650° to 1000° C.; and contacting the heated silicon carbide substrate with a gas comprising trimethylsilane for a time sufficient to grow the epitaxial silicon carbide film.
Claim 14
Dependent Claim
48 words
The method of claim 11 wherein the silicon carbide substrate is cleaned prior to growing the silicon carbide film by a method selected from the group consisting of dipping the substrate in an acid and exposing the substrate to HCl/H 2 at a temperature above about 1000° C.
Claim 15
Dependent Claim
28 words
The method of claim 11 wherein the gas also comprises an inert carrier gas in a ratio of trimethylsilane:carrier in the range of about 1:1 to about 1:10000.
Claim 16
Dependent Claim
31 words
The method of claim 11 wherein the heated silicon carbide substrate is contacted with the trimethylsilane gas for a time in the range of between about 1 and about 30 minutes.
Claim 17
Dependent Claim
32 words
The method of claim 11 wherein the heated silicon carbide substrate is contacted with the trimethylsilane gas at a pressure in the range of between about 10 -6 Torr and atmospheric pressure.
Claim 18
Dependent Claim
37 words
The method of claim 11 wherein growth of the epitaxial silicon carbide film is assisted by a vapor deposition technique selected from the group consisting of molecular beam epitaxy, ion beams, lasers assisted CVD and hot filaments.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-13 | 1999-05-15 | 1999-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-13 | 2003-05-15 | 2003-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-13 | 2007-05-15 | 2007-11-14 | $7700.00 | Window Closed / Lapsed |