Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device

Claim 2

A charge detection device for converting a signal charge, consisting of carriers of a first polarity, externally provided, into a voltage signal, the charge detection device comprising a MOS transistor, the MOS transistor including: a semiconductor substrate of a first conductivity type; a first semiconductor layer having a transistor channel for carriers of a second polarity, the first semiconductor layer being formed in the semiconductor substrate and having a second conductivity type, the carriers of the second polarity being majority carriers of the first semiconductor layer; an insulating layer provided on the first semiconductor layer; and a gate electrode provided on the insulating layer, wherein transistor characteristics of the MOS transistor are changed by the signal charge accumulated in a surface region of the first semiconductor layer immediately below an interface between the first semiconductor layer and the insulating layer, said charge detection device thereby detecting a quantity of the signal charge.

Claim 3

A charge detection device according to claim 1, wherein the MOS transistor further includes a source region, a drain region, and a channel region, the source region and the drain region are formed in surface regions on the first semiconductor layer and have the second conductivity type, and the channel region is provided between the source region and the drain region.

Claim 4

A charge detection device according to claim 2, wherein: a reverse bias voltage is applied across the semiconductor substrate and the drain region, the gate electrode is applied with a prescribed voltage to form a channel potential which accumulates the signal charge at the surface of the channel region and provides a transistor channel below the surface of the channel region, and the source region is connected to a power source via a load, thereby detecting the quantity of the signal charge.

Claim 5

A charge detection device according to claim 2, wherein a path in which the signal charge is transferred and the transistor channel of the MOS transistor run in directions crossing each other, in the state of being isolated from each other in the depth direction.

Claim 6

A charge detection device according to claim 2, further comprising a charge input section, the charge input section including: a second semiconductor layer provided in a surface region of the first semiconductor layer in contact with the channel region and having the first conductivity; and an input gate electrode, provided above the second semiconductor layer, with another insulating layer sandwiched therebetween, for controlling an input of the signal charge to the channel region.

Claim 7

A charge detection device according to claim 5, wherein the drain region includes a first sub-region and a second sub-region opposed to each other, the first and second sub-regions interpose a portion of the surface region of the first semiconductor layer and the source region is provided between the first and the second sub-regions in a state of isolation from the charge input section.

Claim 8

A charge detection device according to claim 5, wherein, the drain region includes a first sub-region and a second sub-region opposed to each other, the first and said sub-regions interpose a portion of the surface region of the first semiconductor layer, and the source region is provided at a center of the portion of the surface region.

Claim 9

A charge detection device according to claim 7, wherein the gate electrode has a shape surrounding the source region.

Claim 10

A charge detection device according to claim 5, wherein: a reverse bias voltage is applied across the semiconductor substrate and the drain region, the gate electrode is applied with a prescribed voltage to form a channel potential which accumulates the signal charge at the surface of the channel region and provides a transistor channel below the surface of the channel region, and the source region is connected to a power source via a load, thereby detecting the quantity of the signal charge in accordance with a timing of applying a voltage with the input gate electrode.

Claim 11

A charge detection device according to claim 5, further comprising a reset section, the reset section including: a third semiconductor layer having the first conductivity type and provided in a surface region of the first semiconductor layer in contact with the channel region and isolated from the second semiconductor layer; and a reset gate electrode, provided above the third semiconductor, with still another insulating layer sandwiched therebetween.

Claim 12

A charge detection device according to claim 10, wherein: a reverse bias voltage is applied across the semiconductor substrate and the drain region, the gate electrode is applied with a prescribed voltage to form a channel potential which accumulates the signal charge at the surface of the channel region and provides a transistor channel below the surface of the channel region, and the source region is connected to a power source via a load, thereby detecting the quantity of the signal charge in accordance with a timing of applying a voltage with the reset Gate electrode.

Claim 13

A charge transfer and detection apparatus, comprising: a charge transfer device for transferring a signal charge, consisting of carriers of a first polarity; and a charge detection device for converting the signal charge provided by the charge transfer device into a voltage signal, wherein the charge detection device includes a MOS transistor having: a semiconductor substrate of a first conductivity type; a first semiconductor layer having a transistor channel for carriers of a second polarity, the first semiconductor layer being formed in the semiconductor substrate and having a second conductivity type, the carriers of the second polarity being majority carriers of the first semiconductor layer; a insulating layer provided on the first semiconductor layer; and a gate electrode provided on the insulating layer, and wherein transistor characteristics of the MOS transistor are changed by the signal charge accumulated in a surface region, of the first semiconductor layer, immediately below an interface between the first semiconductor layer and the insulating layer, said apparatus thereby detecting a quantity of the signal charge.

Claim 14

A charge transfer and detection apparatus, comprising: a charge transfer device for transferring a signal charge, consisting of carriers of a first polarity; and a charge detection device for converting the signal charge provided by the charge transfer device into a voltage signal, wherein the charge detection device includes a MOS transistor having: a semiconductor substrate of a first conductivity type; a first semiconductor layer having a transistor channel for carriers of a second polarity, the first semiconductor layer being formed in the semiconductor substrate and having a second conductivity type, the carriers of the second polarity being majority carriers of the first semiconductor layer; a insulating layer provided on the first semiconductor layer; and a gate electrode provided on the insulating layer, and wherein transistor characteristics of the MOS transistor are changed by the signal charge accumulated in a surface region, of the first semiconductor layer, immediately below an interface between the first semiconductor layer and the insulating layer, said apparatus thereby detecting a quantity of the signal charge.

Claim 15

A charge transfer and detection apparatus according to claim 12, wherein the charge transfer device and the charge detection device are provided on a single semiconductor substrate.