US4984045A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Output sensor of charge transfer device
Assignee: Toshiba Corp
•
Filing: 1988-07-12
•
Granted: 1991-01-08
•
Expires: 2008-07-12
Abstract
Abstract An output sensor of a charge transfer device includes a well region of a second conductivity type having a low impurity concentration and formed in the surface area of a semiconductor substrate of a first conductivity type. A charge-sensing buried channel region of the first conductivity type is formed in part of the surface area of the well region, and a gate electrode is formed on the charge-sensing buried channel region via a gate insulation film. Further, source and drain regions of the second conductivity type are disposed on both sides of the charge-sensing buried channel region in a width direction thereof to constituted a charge-sensing MOS transistor. The charge-sensing buried channel region is formed continuously with a charge-transfer buried channel region buried in the well region.
Inventors
- 👤 Yoshiyuki Matsunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:03
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/454
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
An output sensor of a charge transfer device comprising: a semiconductor substrate of a first conductivity type; a well region of a second conductivity type having a low impurity concentration and formed in the surface area of said semiconductor substrate; a charge-sensing buried channel region of the first conductivity type formed in part of the surface area of said well region, part of the well region which lies under said channel region being set in substantially the depletion state; at least one gate electrode formed on said charge-sensing buried channel region via a gate insulation film; and source and drain regions of the second conductivity type disposed on both sides of said charge-sensing buried channel region in a width direction thereof.
Claim 2
Dependent Claim
121 words
An output sensor of a charge transfer device comprising: a semiconductor substrate of a first conductivity type; a well region of a second conductivity type having a low impurity concentration and formed in the surface area of said semiconductor substrate; a charge-sensing buried channel region of the first conductivity type formed in part of the surface area of said well region, part of the well region which lies under said channel region being set in substantially the depletion state; at least one gate electrode formed on said charge-sensing buried channel region via a gate insulation film; and source and drain regions of the second conductivity type disposed on both sides of said charge-sensing buried channel region in a width direction thereof.
Claim 3
Dependent Claim
32 words
An output sensor of a charge transfer device according to claim 1, wherein said charge-sensing buried channel region is formed continuously with a charge-transfer buried channel region buried in said well region.
Claim 4
Dependent Claim
37 words
An output sensor of a charge transfer device according to claim 1, wherein said charge-sensing buried channel region is formed to have a buried current channel of the second conductivity type formed in the surface area thereof.
Claim 5
Dependent Claim
38 words
An output sensor of a charge transfer device according to claim 1, wherein said gate is formed in the form of a single layer and is biased to a preset potential at the time of output sensing operation.
Claim 6
Dependent Claim
32 words
An output sensor of a charge transfer device according to claim 1, wherein said gate electrode is formed of a laminated structure of a floating gate electrode and a control gate electrode.
Claim 7
Dependent Claim
154 words
An output sensor of a charge transfer device comprising: a semiconductor substrate of a first conductivity type; a well region of a second conductivity type having a low impurity concentration and formed in the surface area of said semiconductor substrate; a charge-sensing buried channel region of the first conductivity type formed in part of the surface area of said well region, part of the well region which lies under said channel region being set in substantially the depletion state; at least one gate electrode formed on said charge-sensing buried channel region via a gate insulation film; source and drain regions of the second conductivity type disposed on both sides of said charge-sensing buried channel region in a width direction thereof; and a switching element connected to said gate electrode, for applying a DC potential to said gate electrode, said switching element being turned off when the output of the charge transfer device is detected.
Claim 8
Dependent Claim
154 words
An output sensor of a charge transfer device comprising: a semiconductor substrate of a first conductivity type; a well region of a second conductivity type having a low impurity concentration and formed in the surface area of said semiconductor substrate; a charge-sensing buried channel region of the first conductivity type formed in part of the surface area of said well region, part of the well region which lies under said channel region being set in substantially the depletion state; at least one gate electrode formed on said charge-sensing buried channel region via a gate insulation film; source and drain regions of the second conductivity type disposed on both sides of said charge-sensing buried channel region in a width direction thereof; and a switching element connected to said gate electrode, for applying a DC potential to said gate electrode, said switching element being turned off when the output of the charge transfer device is detected.
Claim 9
Dependent Claim
126 words
An output sensor of a charge transfer device comprising: a semiconductor substrate of a first conductivity type; a well region of a second conductivity type having a low impurity concentration and formed in the surface area of said semiconductor substrate; a charge-sensing buried channel region of the first conductivity type formed in part of the surface area of said well region, part of the well region which lies under said channel region being set in substantially the depletion state; a floating gate electrode and a control gate electrode, both formed on said charge-sensing buried channel region via a gate insulation film; and source and drain regions of the second conductivity type disposed on both sides of said charge-sensing buried channel region in a width direction thereof.
Claim 10
Dependent Claim
126 words
An output sensor of a charge transfer device comprising: a semiconductor substrate of a first conductivity type; a well region of a second conductivity type having a low impurity concentration and formed in the surface area of said semiconductor substrate; a charge-sensing buried channel region of the first conductivity type formed in part of the surface area of said well region, part of the well region which lies under said channel region being set in substantially the depletion state; a floating gate electrode and a control gate electrode, both formed on said charge-sensing buried channel region via a gate insulation film; and source and drain regions of the second conductivity type disposed on both sides of said charge-sensing buried channel region in a width direction thereof.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |