Semiconductor optical devices

Claim 2

A semiconductor optical device including: a semiconductor substrate of a first conductivity type and having opposite front and rear surfaces; a first conductivity type active layer disposed on the front surface of the semiconductor substrate; a first semiconductor layer of a second conductivity type, opposite the first conductivity type, disposed on the active layer; a diffraction grating comprising portions of a superlattice layer disposed on the first semiconductor layer, said superlattice layer comprising alternatingly arranged second semiconductor layers comprising a semiconductor material in which mass transport during growth of other semiconductor layers hardly occurs and second conductivity type third semiconductor layers comprising a semiconductor material different from the semiconductor material of the second semiconductor layers; a second conductivity type fourth semiconductor layer burying the diffraction grating; a second conductivity type contact layer disposed on the fourth semiconductor layer; and first and second electrodes respectively disposed on the rear surface of the substrate and the contact layer.

Claim 3

In a semiconductor optical device including a semiconductor laser diode and a light modulator for modulating laser light produced by the laser diode integrated on a single semiconductor substrate, a light absorption layer in the light modulator comprising a first part of a semiconductor layer grown on the substrate, and a diffraction grating of the semiconductor laser diode comprising a plurality of mutually discontinuous stripe-shaped portions prepared from a second part of the semiconductor layer, said second part being separate from the first part of the semiconductor layer and said stripe-shaped portions being periodically arranged parallel to each other and perpendicular to a light guiding direction of the laser diode.

Claim 4

In a semiconductor optical device including a semiconductor laser diode and a light modulator for modulating laser light produced by the laser diode integrated on a single semiconductor substrate, a light absorption layer in the light modulator comprising a first part of a semiconductor layer grown on the substrate, and a diffraction grating of the semiconductor laser diode comprising a plurality of mutually discontinuous stripe-shaped portions prepared from a second part of the semiconductor layer, said second part being separate from the first part of the semiconductor layer and said stripe-shaped portions being periodically arranged parallel to each other and perpendicular to a light guiding direction of the laser diode.

Claim 5

The semiconductor optical device of claim 2 wherein the diffraction grating is formed after etching a part of the semiconductor layer where the diffraction grating is to be formed.

Claim 6

The semiconductor optical device of claim 3 wherein the semiconductor layer is a strained multiple quantum well structure.

Claim 7

The semiconductor optical device of claim 2 wherein the semiconductor layer is a strained multiple quantum well structure.

Claim 8

In a semiconductor optical device including first and second elements integrated on a single semiconductor substrate; a first multiple quantum well structure having a relatively thick portion in a region where the first element is located and a relatively thin portion in a region where the second element is located; and a second multiple quantum well structure having a relatively thin portion in the region where the first element is located and a relatively thick portion in the region where the second element is located.

Claim 9

In a semiconductor optical device including first and second elements integrated on a single semiconductor substrate; a first multiple quantum well structure having a relatively thick portion in a region where the first element is located and a relatively thin portion in a region where the second element is located; and a second multiple quantum well structure having a relatively thin portion in the region where the first element is located and a relatively thick portion in the region where the second element is located.

Claim 10

The semiconductor optical device of claim 6 wherein the second element is a semiconductor laser diode, the first element is a light modulator for modulating laser light produced by the laser diode, part of the second multiple quantum well structure is an active layer of the semiconductor laser diode, and part of the first multiple quantum well structure is a light absorption layer of the light modulator.

Claim 11

An integrated semiconductor laser diode and light modulator comprising: a compound semiconductor substrate of a first conductivity type; a compound semiconductor first cladding layer of the first conductivity type disposed on the semiconductor substrate; in a first region of the first cladding layer, a compound semiconductor active layer and a compound semiconductor barrier layer successively disposed on the first cladding layer and a plurality of mutually discontinuous stripe-shaped portions of a multiple quantum well structure disposed on the barrier layer, the stripe-shaped portions being periodically arranged parallel to each other and perpendicular to a light guiding direction of the semiconductor laser diode, forming a diffraction grating; in a second region of the first cladding layer, a light absorption layer having a multiple quantum well structure contiguous with and contacting the active layer and the barrier layer; a compound semiconductor second cladding layer of a second conductivity type opposite the first conductivity type disposed on and contacting the barrier layer, the stripe-shaped portions of the multiple quantum well structure, and the light absorption layer; a first electrode in electrical contact with the semiconductor substrate; a second electrode in electrical contact with the second cladding layer opposite the first region of the first cladding layer; and a third electrode spaced from the second electrode and in electrical contact with the second cladding layer opposite the second region of the first cladding layer.

Claim 12

An integrated semiconductor laser diode and light modulator comprising: a compound semiconductor substrate of a first conductivity type; a compound semiconductor first cladding layer of the first conductivity type disposed on the semiconductor substrate; in a first region of the first cladding layer, a compound semiconductor active layer and a compound semiconductor barrier layer successively disposed on the first cladding layer and a plurality of mutually discontinuous stripe-shaped portions of a multiple quantum well structure disposed on the barrier layer, the stripe-shaped portions being periodically arranged parallel to each other and perpendicular to a light guiding direction of the semiconductor laser diode, forming a diffraction grating; in a second region of the first cladding layer, a light absorption layer having a multiple quantum well structure contiguous with and contacting the active layer and the barrier layer; a compound semiconductor second cladding layer of a second conductivity type opposite the first conductivity type disposed on and contacting the barrier layer, the stripe-shaped portions of the multiple quantum well structure, and the light absorption layer; a first electrode in electrical contact with the semiconductor substrate; a second electrode in electrical contact with the second cladding layer opposite the first region of the first cladding layer; and a third electrode spaced from the second electrode and in electrical contact with the second cladding layer opposite the second region of the first cladding layer.

Claim 13

The integrated semiconductor laser diode and light modulator of claim 8 wherein the stripe-shaped portions of the multiple quantum well structure and the light absorption layer respectively include quantum well and quantum barrier layers, the respective quantum well layers and the respective quantum barrier layers having the same composition.

Claim 14

The integrated semiconductor laser diode and light modulator of claim 8 wherein the light absorption layer and the stripe-shaped portions of the multiple quantum well structure are strained multiple quantum well structures.

Claim 15

An integrated semiconductor laser diode and light modulator comprising: a compound semiconductor substrate; a compound semiconductor light guiding layer disposed on and having an interface with the semiconductor substrate, the interface of the semiconductor substrate and the light guiding layer including a periodic variation forming a diffraction grating in a first region of the semiconductor substrate; a first layer including a multiple quantum well structure disposed on the light guiding layer and having a first thickness opposite the first region of the semiconductor substrate and a second thickness, larger than the first thickness, opposite a second region of the semiconductor substrate; a second layer including a multiple quantum structure disposed on the first multiple quantum well structure and having a first thickness opposite the first region of the semiconductor substrate and a second thickness, smaller than the first thickness of the second layer, opposite the second region of the semiconductor substrate; a compound semiconductor cladding layer disposed on the second layer; a first electrode disposed on the semiconductor substrate; a second electrode in electrical contact with the cladding layer opposite the first region of the semiconductor substrate; and a third electrode spaced from the second electrode and in electrical contact with the cladding layer opposite the second region of the semiconductor substrate.

Claim 16

An integrated semiconductor laser diode and light modulator comprising: a compound semiconductor substrate; a compound semiconductor light guiding layer disposed on and having an interface with the semiconductor substrate, the interface of the semiconductor substrate and the light guiding layer including a periodic variation forming a diffraction grating in a first region of the semiconductor substrate; a first layer including a multiple quantum well structure disposed on the light guiding layer and having a first thickness opposite the first region of the semiconductor substrate and a second thickness, larger than the first thickness, opposite a second region of the semiconductor substrate; a second layer including a multiple quantum structure disposed on the first multiple quantum well structure and having a first thickness opposite the first region of the semiconductor substrate and a second thickness, smaller than the first thickness of the second layer, opposite the second region of the semiconductor substrate; a compound semiconductor cladding layer disposed on the second layer; a first electrode disposed on the semiconductor substrate; a second electrode in electrical contact with the cladding layer opposite the first region of the semiconductor substrate; and a third electrode spaced from the second electrode and in electrical contact with the cladding layer opposite the second region of the semiconductor substrate.

Claim 17

The integrated semiconductor laser diode and light modulator of claim 11 wherein the first region of the semiconductor substrate is part of the semiconductor laser and the second region of the semiconductor substrate is part of the light modulator.

Claim 18

The integrated semiconductor laser diode and light modulator of claim 11 wherein each of the first and second layers includes a plurality of alternating quantum well layers and quantum barrier layers of respective thicknesses wherein the thicknesses of the quantum well layers and number of quantum well layers in each of the first and second layers are different.