Patent US5456757A successfully refreshed from Google Patents.
US5456757A
Expired / Lapsed
US
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Susceptor for vapor deposition
Assignee: Applied Materials Inc
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Filing: 1993-10-29
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Granted: 1995-10-10
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Expires: 2013-10-29
Abstract
Abstract A novel susceptor used in a chemical vapor deposition device that is made of a ceramic material, specifically, an aluminum nitride material.
Inventors
- 👤 Michio Aruga
- 👤 Atsunobu Ohkuba
- 👤 Akihiko Saito
- 👤 Katsumasa Anan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:57
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4581
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
25 words
A susceptor plate for supporting a substrate in a deposition chamber comprising aluminum nitride, said plate being situated between an electrode and a reaction area.
Claim 2
Dependent Claim
25 words
A susceptor plate for supporting a substrate in a deposition chamber comprising aluminum nitride, said plate being situated between an electrode and a reaction area.
Claim 3
Dependent Claim
25 words
A susceptor plate according to claim 1, wherein said deposition chamber is a chemical vapor deposition chamber or a plasma enhanced chemical vapor deposition chamber.
Claim 4
Dependent Claim
90 words
In a deposition chamber, the combination comprising: a susceptor plate having a top surface, a bottom surface and a diameter for supporting a substrate, said susceptor plate comprising aluminum nitride; an electrode plate having an outside diameter positioned juxtaposed to the bottom surface of said susceptor plate; and an electrode cover having an external diameter larger than the outside diameter of the electrode plate such that when it is mounted to the bottom surface of said susceptor plate it forms a cavity adapted to receive and shield said electrode plate.
Claim 5
Dependent Claim
90 words
In a deposition chamber, the combination comprising: a susceptor plate having a top surface, a bottom surface and a diameter for supporting a substrate, said susceptor plate comprising aluminum nitride; an electrode plate having an outside diameter positioned juxtaposed to the bottom surface of said susceptor plate; and an electrode cover having an external diameter larger than the outside diameter of the electrode plate such that when it is mounted to the bottom surface of said susceptor plate it forms a cavity adapted to receive and shield said electrode plate.
Claim 6
Dependent Claim
25 words
The combination of claim 3, which further includes gas injectors for introducing a cleaning gas into the chamber, said cleaning gas including highly reactive species.
Claim 7
Dependent Claim
30 words
The combination of claim 4, wherein said electrode plate is adapted to be energized by a voltage suitable for ionizing said gas to establish a plasma within the deposition chamber.
Claim 8
Dependent Claim
13 words
The combination of claim 5, in which said plasma is a fluorine-bearing plasma.
Claim 9
Dependent Claim
17 words
A susceptor assembly according to claim 3, wherein said electrode cover is made of a ceramic material.
Claim 10
Dependent Claim
26 words
A susceptor assembly according to claim 3, wherein said external diameter of said electrode cover is substantially the same as said diameter of the susceptor plate.
Claim 11
Dependent Claim
25 words
A susceptor assembly according to claim 3, wherein said deposition chamber is a chemical vapor deposition chamber or a plasma enhanced chemical vapor deposition chamber.
Claim 12
Dependent Claim
69 words
In a plasma processing chamber for depositing materials upon substrates, the apparatus comprising: means for introducing a cleaning gas into the chamber, said gas including highly reactive components; electrode means for applying voltage to ionize the gas into a plasma; a member for supporting a substrate within said chamber, said member being comprised of aluminum nitride, said aluminum nitride being situated between the electrode means and a reaction area.
Claim 13
Dependent Claim
69 words
In a plasma processing chamber for depositing materials upon substrates, the apparatus comprising: means for introducing a cleaning gas into the chamber, said gas including highly reactive components; electrode means for applying voltage to ionize the gas into a plasma; a member for supporting a substrate within said chamber, said member being comprised of aluminum nitride, said aluminum nitride being situated between the electrode means and a reaction area.
Claim 14
Dependent Claim
17 words
The apparatus of claim 10, in which said member for supporting a substrate also is an electrode.
Claim 15
Dependent Claim
25 words
The apparatus of claim 10, which also includes means for introducing a process gas to support a deposition process upon a surface of a substrate.
Claim 16
Dependent Claim
13 words
The apparatus of claim 10, wherein said cleaning gas includes a fluorine component.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-10-09 | 1999-04-10 | 1999-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-10-09 | 2003-04-10 | 2003-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-10-09 | 2007-04-10 | 2007-10-10 | $7700.00 | Window Closed / Lapsed |