Etching method

Abstract

Abstract PURPOSE:To perform etching with active hydrogen, by adding an external magnetic field together with a microwave electric field, and providing an etching means in a space, in which an electric field is largest, or in the vicinity thereof. CONSTITUTION:An etching substrate 10 is provided on a holder 10'. The holder has high heat conductivity. Aluminum nitride as ceramics is used for the holder so as not to disturb the microwaves and a magnetic field as much as possible. Infrared rays from an infrared-ray heater 20 are condensed by using a parabolic reflecting surface 21 and a lens system 22, and the substrate holder is heated. Then hydrogen is introduced into a high density plasma generating region 2 through a 10SCCM gas system 7. A microwave of 2.45 GHz is applied from the outside. Furthermore, a magnetic filed of about 2 k gauss is applied from magnets 5 and 5', and the high density hydrogen plasma is generated in a plasma generating space 1. Then, hydrogen atoms or electrons having high energy reach the upper part of the substrate 10 from the high density plasma region. The surface can be washed and slightly etched.

Inventors

• 👤 Naoki Hirose
• 👤 直樹 広瀬
• 👤 Takashi Inushima
• 👤 犬島　喬
• 👤 Mamoru Tashiro
• 👤 田代　衛
• 👤 Shunpei Yamazaki
• 👤 舜平 山崎

Bibliographic Details