US5451548A
Expired / Lapsed
US
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Electron beam deposition of gallium oxide thin films using a single high purity crystal source
Assignee: AT&T Inc
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Filing: 1994-03-23
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Granted: 1995-09-19
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Expires: 2014-03-23
Abstract
Abstract Disclosed is a method of fabricating a stoichiometric gallium oxide (Ga 2 O 3 ) thin film with dielectric properties on at least a portion of a semiconducting, insulating or metallic substrate. The method comprises electron-beam evaporation of single crystal, high purity Gd 3 Ga 5 O 12 complex compound combining relatively ionic oxide, such as Gd 2 O 3 , with the more covalent oxide Ga 2 O 3 such as to deposit a uniform, homogeneous, dense Ga 2 O 3 thin film with dielectric properties on a variety of said substrates, the semiconducting substrates including III-V and II-VI compound semiconductors.
Inventors
- 👤 Neil E. J. Hunt
- 👤 Matthias Passlack
- 👤 Erdmann F. Schubert
- 👤 George J. Zydzik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:01
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/013; H10D64/01358; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6332; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
117 words
A process for fabricating a structure comprising a substrate and a thin film of gallium oxide, which comprises depositing a target material on at least a part of a surface of a substrate by a particle beam deposition procedure so that said surface is at least partially covered with a contacting material region, said substrate being selected from the group consisting of semiconductor, insulating and metal substrates, in which said material region comprises a thin film of Ga 2 O 3 deposited by electron-beam evaporation using a high purity single crystal Gd 3 Ga 5 O 12 source, at substrate temperatures ranging from 40° C. to 370° C. and background pressures at or above 1×10 -10 Torr.
Claim 2
Dependent Claim
117 words
A process for fabricating a structure comprising a substrate and a thin film of gallium oxide, which comprises depositing a target material on at least a part of a surface of a substrate by a particle beam deposition procedure so that said surface is at least partially covered with a contacting material region, said substrate being selected from the group consisting of semiconductor, insulating and metal substrates, in which said material region comprises a thin film of Ga 2 O 3 deposited by electron-beam evaporation using a high purity single crystal Gd 3 Ga 5 O 12 source, at substrate temperatures ranging from 40° C. to 370° C. and background pressures at or above 1×10 -10 Torr.
Claim 3
Dependent Claim
46 words
A process of claim 1, in which said Ga 2 O 3 thin film is deposited with dielectric characteristics on said surface at temperatures below 50° C. and a background pressure of 1×10 -6 Torr without introduction of any additional O 2 into the deposition chamber.
Claim 4
Dependent Claim
13 words
A process of claim 2, in which said temperature is about 40° C.
Claim 5
Dependent Claim
43 words
A process of claim 1, in which said Ga 2 O 3 thin film is deposited with dielectric characteristics on said surface kept at temperatures below 150° C. and with introduction of an additional O 2 at partial oxygen pressure 2×10 -4 Torr.
Claim 6
Dependent Claim
13 words
A process of claim 4, in which said temperature is about 125° C.
Claim 7
Dependent Claim
32 words
A process of claim 1, in which said thin film is deposited as a part of a structure comprising a semiconductor material, a metal layer, said thin film and another metal layer.
Claim 8
Dependent Claim
28 words
A process of claim 1, in which said thin film is deposited as a part of a structure comprising a semiconductor, said thin film and a metal layer.
Claim 9
Dependent Claim
73 words
A process of preparing structure comprising a substrate and a dielectric thin film on a surface of a substrate, which comprises maintaining said substrate in a deposition chamber at a temperature ranging from 40° to 370° C., maintaining in the deposition chamber a pressure and depositing a Ga 2 O 3 thin film on said substrate by electron beam evaporation from a high purity, single crystal Gd 3 Ga 5 O 12 source.
Claim 10
Dependent Claim
73 words
A process of preparing structure comprising a substrate and a dielectric thin film on a surface of a substrate, which comprises maintaining said substrate in a deposition chamber at a temperature ranging from 40° to 370° C., maintaining in the deposition chamber a pressure and depositing a Ga 2 O 3 thin film on said substrate by electron beam evaporation from a high purity, single crystal Gd 3 Ga 5 O 12 source.
Claim 11
Dependent Claim
42 words
A process of claim 8, in which said Ga 2 O 3 thin film is deposited on said surface at temperatures below 50° C. and a pressure of 1×10 -6 Torr without introduction of any additional O 2 into the deposition chamber.
Claim 12
Dependent Claim
13 words
A process of claim 9, in which said temperature is about 40° C.
Claim 13
Dependent Claim
41 words
A process of claim 8, in which said Ga 2 O 3 thin film is deposited on said surface kept at temperatures below 150° C. and with an introduction of an additional O 2 at partial oxygen pressure 2×10 -4 Torr.
Claim 14
Dependent Claim
13 words
A process of claim 11, in which said temperature is about 125° C.
Claim 15
Dependent Claim
22 words
A process of claim 8, in which the said substrate is selected from the group consisting of semiconductor, insulating and metal materials.
Claim 16
Dependent Claim
27 words
A process of claim 8, in which said substrate is a semiconductor substrate comprising semiconductor material selected from the group consisting of III-V and II-VI compound semiconductors.
Claim 17
Dependent Claim
11 words
A process of claim 14, in which said semiconductor comprises GaAs.
Claim 18
Dependent Claim
25 words
A process of claim 8, in which substrate is a metal selected from the group consisting of Ti, Pt, Au, Ni, Cr and their alloys.
Claim 19
Dependent Claim
22 words
A process of claim 8, in which said substrate is an insulator selected from the group consisting of oxides, nitrides and fluorides.
References Cited (Backward Citations)
US4617192A
Cited
US4749255A
Cited
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