Monolithic silicon nitride having high fracture toughness

Claim 2

A monolithic silicon nitride ceramic, said ceramic having been densified and heat treated in the presence of about 6.5 to 12 wt % total sintering aids, the balance of said ceramic being silicon nitride and incidental impurities, said densification and heat treatment having been carried out in at least two steps, wherein: (a) at least a first of said steps is carried out at a temperature ranging from about 1750° C. to 2000° C. for a time ranging from about 1 to 10 hours to produce an intermediate ceramic with a density of about 90% of theoretical; (b) at least a succeeding one of said steps is carried out at a temperature higher than 2000° C. for a time ranging from about 1 to 10 hours to heat treat the intermediate ceramic; and (c) each of said steps is carried out under nitrogen pressure sufficiently high to avoid decomposition of silicon nitride to produce a ceramic wherein microstructure and fracture toughness properties are substantially isotropic in that said ceramic exhibits in all directions a variation in fracture toughness of less than about 5%, said ceramic having a density greater than 98% of theoretical density, said microstructure consisting of β-Si 3 N 4 grains which are randomly distributed in three-dimensional space with no preferred orientation in any direction having an average grain width ranging from about 1.0 to 1.5 μm and an average aspect ratio greater than 1.8, and said ceramic having a Chevron Notch fracture toughness of at least 9 MPa·m 1/2 at room temperature, and R-curve behavior.

Claim 3

A ceramic as recited by claim 1, having a 4-point bend strength Weibull modulus of at least 15.

Claim 4

A ceramic as recited by claim 1, having a damage tolerance characterized by the equation B=d(log S)/d(log P) where S is the 4 point bend strength measured after indentation, P is the Vickers indentation load and B is greater than -0.3.

Claim 5

A ceramic as recited by claim 1, having a thermal conductivity of at least 45 W.m-1.K-1 at ambient temperature.

Claim 6

A ceramic as recited by claim 1, wherein said sintering aid is a refractory sintering aid, the major component of which is an oxide, nitride or oxynitride compound of at least two elements selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er and Yb and the minor component of which is an oxide or oxynitride compound of at least one element selected from the group consisting of Mg, Sr, Ba, Al and Si.

Claim 7

A ceramic as recited by claim 5, wherein said major component of said refractory sintering aid is a nitride or oxynitride compound of at least two elements selected from the group consisting of Y, La, Er and Yb.

Claim 8

A ceramic as recited by claim 5, wherein said sintering aid, calculated on an oxide basis, is present in an amount ranging from about 7.5 to 9 wt %.

Claim 9

A ceramic as recited by claim 5, wherein said major component, calculated on an oxide basis, is present in an amount of at least 5 wt % and said minor component, calculated on an oxide basis, is present in an amount less than 4 wt %.

Claim 10

A monolithic silicon nitride ceramic, said ceramic having been densified and heat treated in the presence of about 6.5 to 12 wt % total sintering aids, the balance of said ceramic being silicon nitride and incidental impurities, said densification and heat treatment having been carried out in at least three steps, wherein: (a) at least a first of said steps is carried out at temperature ranging from about 1700° C. to 1850° C. for a time ranging from about 0.25 hours to 2 hours to partially convert α-Si 3 N 4 to β-Si 3 N 4 ; (b) at least one of the succeeding steps is carried out at a temperature ranging from about 1850° C. to 2000° C. for a time ranging from about 1 to 6 hours to produce an intermediate ceramic having a density of about 90% of theoretical; (c) at least one of the succeeding steps is carried out at a temperature higher than 2000° C. for a time ranging from about 1 to 6 hours to heat treat the intermediate ceramic; and (d) each of the said steps is carried out under nitrogen pressure sufficiently high to avoid decomposition of silicon nitride to produce a ceramic wherein microstructure and fracture toughness properties are substantially isotropic in that said ceramic exhibits in all directions a variation in fracture toughness of less than about 5%, said ceramic having a density of at least 98% of theoretical, and said microstructure consisting of β-Si 3 N 4 grains which are randomly distributed in three-dimensional space with no preferred orientation in any direction, said grains having an average grain width ranging from about 1.0 to 1.5 μm and an average aspect ratio greater than about 1.8.

Claim 11

A monolithic silicon nitride ceramic, said ceramic having been densified and heat treated in the presence of about 6.5 to 12 wt % total sintering aids, the balance of said ceramic being silicon nitride and incidental impurities, said densification and heat treatment having been carried out in at least three steps, wherein: (a) at least a first of said steps is carried out at temperature ranging from about 1700° C. to 1850° C. for a time ranging from about 0.25 hours to 2 hours to partially convert α-Si 3 N 4 to β-Si 3 N 4 ; (b) at least one of the succeeding steps is carried out at a temperature ranging from about 1850° C. to 2000° C. for a time ranging from about 1 to 6 hours to produce an intermediate ceramic having a density of about 90% of theoretical; (c) at least one of the succeeding steps is carried out at a temperature higher than 2000° C. for a time ranging from about 1 to 6 hours to heat treat the intermediate ceramic; and (d) each of the said steps is carried out under nitrogen pressure sufficiently high to avoid decomposition of silicon nitride to produce a ceramic wherein microstructure and fracture toughness properties are substantially isotropic in that said ceramic exhibits in all directions a variation in fracture toughness of less than about 5%, said ceramic having a density of at least 98% of theoretical, and said microstructure consisting of β-Si 3 N 4 grains which are randomly distributed in three-dimensional space with no preferred orientation in any direction, said grains having an average grain width ranging from about 1.0 to 1.5 μm and an average aspect ratio greater than about 1.8.

Claim 12

A ceramic as recited by claim 9, wherein said sintering aid is a refractory sintering aid, the major component of which is an oxide, nitride or oxynitride compound of at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, and Yb and the minor component of which is an oxide or oxynitride compound of at least one element selected from the group consisting of Mg, Sr, Ba, Al, and Si.

Claim 13

A ceramic as recited in claim 10, wherein said major component of said refractory sintering aid is a nitride or oxynitride compound of at least two elements selected from the group consisting of Y, La, Er and Yb.

Claim 14

A ceramic as recited in claim 10, wherein said sintering aid, calculated on an oxide basis, is present in an amount ranging from 7.5 to 9 wt %.

Claim 15

A ceramic as recited by claim 10, wherein said major component, calculated on an oxide basis, is present in an amount of at least 5 wt % and said minor component, calculated on an oxide basis, is present in an amount less than 3 wt %.